KM416C4100BS-6 Samsung, KM416C4100BS-6 Datasheet
KM416C4100BS-6
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KM416C4100BS-6 Summary of contents
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... Refresh cycle(4K Ref Ref.), access time (-45 -6) are optional features of this family. All of this fam- ily have CAS-before-RAS refresh, RAS-only refresh and Hidden refresh capabilities. This 4Mx16 Fast Page Mode DRAM family is fabri- cated using Samsung s advanced CMOS process to realize high band-width, low power consumption and high reliability. FEATURES • ...
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KM416C4000B, KM416C4100B PIN CONFIGURATION (Top Views) • KM416C40(1)00BS DQ0 3 48 DQ1 4 47 DQ2 5 46 DQ3 DQ4 8 43 DQ5 9 42 DQ6 10 41 DQ7 ...
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KM416C4000B, KM416C4100B ABSOLUTE MAXIMUM RATINGS Parameter Voltage on any pin relative Voltage on V supply relative Storage Temperature Power Dissipation Short Circuit Output Current * Permanent device damage may occur if "ABSOLUTE MAXIMUM RATINGS" ...
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KM416C4000B, KM416C4100B DC AND OPERATING CHARACTERISTICS Symbol Power I Don t care CC1 I Normal Don t care CC2 I Don t care CC3 I Don t care CC4 I Normal Don t care CC5 I Don t care CC6 ...
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KM416C4000B, KM416C4100B CAPACITANCE (T = Parameter Input capacitance [A0 ~ A12] Input capacitance [RAS, UCAS, LCAS, W, OE] Output capacitance [DQ0 - DQ15] AC CHARACTERISTICS ( Test condition : V =5.0V 10%, Vih/Vil=2.4/0.8V, Voh/Vol=2.4/0.4V CC ...
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KM416C4000B, KM416C4100B AC CHARACTERISTICS (Continued) Parameter Refresh period (4K, Normal) Refresh period (8K, Normal) Write command set-up time CAS to W delay time RAS to W delay time Column address to W delay time CAS precharge W delay time CAS ...
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KM416C4000B, KM416C4100B TEST MODE CYCLE Parameter Random read or write cycle time Read-modify-write cycle time Access time from RAS Access time from CAS Access time from column address RAS pulse width CAS pulse width RAS hold time CAS hold time ...
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KM416C4000B, KM416C4100B NOTES initial pause of 200 is required after power-up followed by any 8 RAS-only refresh or CAS-before-RAS refresh cycles before proper device operation is achieved (min) and V (max) are reference levels for ...
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KM416C4000B, KM416C4100B are referenced to the earlier CAS falling edge. 13. ASC CAH t 14. is specified from the later CAS rising edge in the previous cycle to the earlier CAS falling edge in the next cycle. ...
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KM416C4000B, KM416C4100B WORD READ CYCLE RAS UCAS LCAS ASR ...
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KM416C4000B, KM416C4100B LOWER BYTE READ CYCLE NOTE : D = OPEN RAS UCAS LCAS ASR ...
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KM416C4000B, KM416C4100B UPPER BYTE READ CYCLE NOTE : D = OPEN RAS UCAS LCAS ASR ...
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KM416C4000B, KM416C4100B WORD WRITE CYCLE ( EARLY WRITE ) NOTE : D = OPEN OUT RAS UCAS LCAS ASR V - ...
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KM416C4000B, KM416C4100B LOWER BYTE WRITE CYCLE ( EARLY WRITE ) NOTE : D = OPEN OUT RAS UCAS LCAS ...
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KM416C4000B, KM416C4100B UPPER BYTE WRITE CYCLE ( EARLY WRITE ) NOTE : D = OPEN OUT RAS UCAS LCAS ...
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KM416C4000B, KM416C4100B WORD WRITE CYCLE ( OE CONTROLLED WRITE ) NOTE : D = OPEN OUT RAS UCAS LCAS ASR V ...
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KM416C4000B, KM416C4100B LOWER BYTE WRITE CYCLE ( OE CONTROLLED WRITE ) NOTE : D = OPEN OUT RAS UCAS LCAS ASR ...
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KM416C4000B, KM416C4100B UPPER BYTE WRITE CYCLE ( OE CONTROLLED WRITE ) NOTE : D = OPEN OUT RAS UCAS LCAS ...
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KM416C4000B, KM416C4100B WORD READ - MODIFY - WRITE CYCLE RAS CRP UCAS CRP LCAS ASR ROW ...
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KM416C4000B, KM416C4100B LOWER-BYTE READ - MODIFY - WRITE CYCLE RAS CRP UCAS CRP LCAS ASR ROW ...
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KM416C4000B, KM416C4100B UPPER-BYTE READ - MODIFY - WRITE CYCLE RAS CRP UCAS CRP LCAS ASR ROW ...
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KM416C4000B, KM416C4100B FAST PAGE MODE WORD READ CYCLE RAS CRP UCAS CRP LCAS ASR RAH ...
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KM416C4000B, KM416C4100B FAST PAGE MODE LOWER BYTE READ CYCLE RAS CRP UCAS CRP LCAS ASR RAH V - ...
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KM416C4000B, KM416C4100B FAST PAGE MODE UPPER BYTE READ CYCLE RAS CRP UCAS CRP LCAS ASR RAH V - ...
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KM416C4000B, KM416C4100B FAST PAGE MODE WORD WRITE CYCLE ( EARLY WRITE ) NOTE : D = OPEN OUT RAS CRP UCAS CRP LCAS ...
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KM416C4000B, KM416C4100B FAST PAGE MODE LOWER BYTE WRITE CYCLE ( EARLY WRITE ) NOTE : D = OPEN OUT RAS CRP UCAS CRP ...
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KM416C4000B, KM416C4100B FAST PAGE MODE UPPER BYTE WRITE CYCLE ( EARLY WRITE ) NOTE : D = OPEN OUT RAS CRP UCAS CRP ...
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KM416C4000B, KM416C4100B FAST PAGE MODE WORD READ-MODIFY-WRITE CYCLE RAS CRP UCAS CRP LCAS RAD t ASR t ASC V ...
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KM416C4000B, KM416C4100B FAST PAGE MODE LOWER BYTE READ - MODIFY - WRITE CYCLE RAS CRP UCAS CRP LCAS RAD ...
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KM416C4000B, KM416C4100B FAST PAGE MODE UPPER BYTE READ - MODIFY - WRITE CYCLE RAS CRP UCAS CRP LCAS RAD ...
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KM416C4000B, KM416C4100B RAS - ONLY REFRESH CYCLE NOTE : Don t care OPEN OUT RAS CRP UCAS CRP ...
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KM416C4000B, KM416C4100B HIDDEN REFRESH CYCLE ( READ ) RAS CRP UCAS LCAS ASR ADDRESS V ...
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KM416C4000B, KM416C4100B HIDDEN REFRESH CYCLE ( WRITE ) NOTE : D = OPEN OUT RAS UCAS LCAS ASR V ...
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KM416C4000B, KM416C4100B CAS - BEFORE - RAS SELF REFRESH CYCLE NOTE : Don t care RAS UCAS LCAS V - ...
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KM416C4000B, KM416C4100B PLASTIC THIN SMALL OUT-LINE PACKAGE TYPE(II) 50 TSOP(II) 400mil 0.034 (0.875) 0.841 (21.35) MAX 0.821 (20.85) 0.829 (21.05) 0.0315 (0.80) 0.002 (0.05) MIN 0.010 (0.25) 0.018 (0.45) CMOS DRAM Units : Inches (millimeters) 0.004 (0.10) 0.010 (0.25) 0.047 ...