HY5V16EF6P-P Hynix Semiconductor, HY5V16EF6P-P Datasheet
HY5V16EF6P-P
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HY5V16EF6P-P Summary of contents
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Document Title 2Bank x 512K x 16bits Synchronous DRAM Revision History Revision No. 0.1 Initial Draft Change : 0.2 PC100 CL2 tAC --> 5.5ns tDPL --> 1CLK This document is a general product description and is subject to change without ...
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DESCRIPTION The Hynix HY5V16EF6(P) series is a 16,777,216bit CMOS Synchronous DRAM, ideally suited for the memory applica- tions which require wide data I/O and high bandwidth. HY5V16EF6(P) is organized as 2banks of 524,288x16. HY5V16EF6(P) is offering fully synchronous operation referenced ...
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... ORDERING INFORMATION Clock Part No. Frequency HY5V16EF6-H 133MHz HY5V16EF6-P 100MHz HY5V16EF6-S 100MHz HY5V16EF6P-H 133MHz HY5V16EF6P-P 100MHz HY5V16EF6P-S 100MHz Rev. 0.2 / Apr. 2004 2Banks x 512K x 16bits Synchronous DRAM CAS Organization Interface Latency 2Banks x 512K x16bit HY5V16EF6(P) Series Package 60Ball FBGA, Lead LVTTL ...
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Ball CONFIGURATION VDD A1 A10 NC / VSS CKE Rev. 0.2 / Apr. 2004 2Banks x 512K x 16bits Synchronous DRAM /CAS ...
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Ball FUNCTION DESCRIPTIONS SYMBOL Ball NAME CLK Clock CKE Clock Enable CS Chip Select BA Bank Address A0 ~ A10 Address Row Address Strobe, RAS, CAS, Column Address WE Strobe, Write Enable LDQM, Data Input/Output UDQM Mask DQ0 ~ Data ...
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FUNCTIONAL BLOCK DIAGRAM 512K x 2banks x 16 I/O Low Power Synchronous DRAM Self Refresh Counter Refresh Interval Timer Address[0:10] CLK Precharge CKE Row Active BA(A11) Column Active CS RAS Burst Length CAS WE UDQM LDQM Mode Register Rev. 0.2 ...
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BASIC FUNCTIONAL DESCRIPTION Mode Register BA A11 A10 Code OP Code A9 Write Mode 0 Burst Read and Burst Write 1 Burst Read and Single Write CAS Latency CAS Latency 0 0 ...
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ABSOLUTE MAXIMUM RATING Parameter Ambient Temperature Storage Temperature Voltage on Any Pin relative Voltage on V relative Voltage on V relative to V DDQ SS Short Circuit Output Current Power Dissipation . Soldering ...
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CAPACITANCE ( Parameter Input capacitance Data input / output capacitance Note 1. Output DC Output Load Circuit DC CHARACTERISTICS I Parameter Power supply voltage Input Leakage Current Output Leakage Current Output High Voltage Output Low ...
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DC CHARACTERISTICS II Parameter Operating Current I DD1 I DD2P Precharge Standby Current in Power Down Mode I DD2PS I DD2N Precharge Standby Current in Non Power Down Mode I DD2NS I DD3P Active Standby Current in Power Down Mode ...
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AC CHARACTERISTICS I Parameter CAS Latency=3 System Clock Cycle Time CAS Latency=2 Clock High Pulse Width Clock Low Pulse Width CAS Latency=3 Access Time From Clock CAS Latency=2 Data-out Hold Time Data-Input Setup Time Data-Input Hold Time Address Setup Time ...
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AC CHARACTERISTICS II Parameter RAS Cycle Time Operation RAS Cycle Time Auto Refresh RAS to CAS Delay RAS Active Time RAS Precharge Time RAS to RAS Bank Active Delay CAS to CAS Delay Write Command to Data-In Delay Data-in to ...
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COMMAND TRUTH TABLE Command CKEn-1 Mode Register Set H No Operation H Bank Active H Read H Read with Autoprecharge Write H Write with Autoprecharge Precharge All Banks H Precharge selected Bank Burst Stop H DQM H Auto Refresh H ...
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PACKAGE INFORMATION 60 Ball 10mm x 6.4mm FBGA 6.40 ± 0.10 Rev. 0.2 / Apr. 2004 2Banks x 512K x 16bits Synchronous DRAM 10.10 +/-0.10 9.10 REF Bottom View 0.450±0.05 Typ. HY5V16EF6(P) Series 0.500 ± 0.10 0.65 Typ. 1.80 +/- ...