HM628512BLRR-5SL Renesas Electronics Corporation., HM628512BLRR-5SL Datasheet
HM628512BLRR-5SL
Related parts for HM628512BLRR-5SL
HM628512BLRR-5SL Summary of contents
Page 1
HM628512B Series 4 M SRAM (512-kword Description The Hitachi HM628512B is a 4-Mbit static RAM organized 512-kword higher performance and low power consumption by employing 0.35 m Hi-CMOS process technology. The device, packaged in a 525-mil SOP (foot print pitch ...
Page 2
... HM628512BLTT-5SL 55 ns HM628512BLTT-7SL 70 ns HM628512BLTT-5UL 55 ns HM628512BLTT-7UL 70 ns HM628512BLRR HM628512BLRR HM628512BLRR-5SL 55 ns HM628512BLRR-7SL 70 ns HM628512BLRR-5UL 55 ns HM628512BLRR-7UL Package 600-mil 32-pin plastic DIP (DP-32) 525-mil 32-pin plastic SOP (FP-32D) 400-mil 32-pin plastic TSOP II (TTP-32D) 400-mil 32-pin plastic TSOP II reverse (TTP-32DR) ...
Page 3
... A12 A17 A13 A11 I/O1 14 A10 I/ I/O7 (Top view) I/O6 I/O5 HM628512BLRR Series I/ I/O3 CC A15 31 A17 A13 A11 A10 I/O7 21 I/O6 20 I/O5 19 I/O4 18 I/O3 17 (Top view) HM628512B Series ...
Page 4
HM628512B Series Block Diagram A18 A16 A12 A14 I/O0 I/O7 CS Timing Pulse Generator Read/Write Control • • • Memory Matrix Row • 1,024 4,096 • Decoder • Column I/O • ...
Page 5
Function Table Mode H Not selected Output disable Read Write Write Note Absolute Maximum Ratings Parameter Power supply voltage Voltage on ...
Page 6
HM628512B Series DC Characteristics (Ta = – Parameter Input leakage current Output leakage current Operating power supply current: DC Operating power supply current Operating power supply current Standby power supply current: DC Standby power supply current ...
Page 7
AC Characteristics (Ta = – Test Conditions Input pulse levels: 0 2.4 V Input rise and fall time Input and output timing reference levels: 1.5 V Output load: 1 TTL Gate + ...
Page 8
HM628512B Series Write Cycle Parameter Write cycle time Chip selection to end of write Address setup time Address valid to end of write Write pulse width Write recovery time WE to output in high-Z Data to write time overlap Data ...
Page 9
Timing Waveforms Read Timing Waveform ( Address CS OE Dout ) OLZ HM628512B Series OHZ Valid Data ...
Page 10
HM628512B Series Write Timing Waveform (1) (OE Clock) Address Dout Din OHZ t DW Valid Data ...
Page 11
Write Timing Waveform (2) (OE Low Fixed) Address Dout Din WHZ Valid Data HM628512B Series t OH *10 ...
Page 12
HM628512B Series Low V Data Retention Characteristics (Ta = – Parameter V for data retention CC Data retention current Chip deselect to data retention time t Operation recovery time Notes: 1. For L-version and 20 A ...
Page 13
Package Dimensions HM628512BLP Series (DP-32) 41.90 42.50 Max 32 1 1.20 2.30 Max 2.54 0. 0.48 0.10 0 – 15 Hitachi Code JEDEC EIAJ Weight (reference value) HM628512B Series Unit: mm 15.24 + 0.11 0.25 – 0.05 DP-32 ...
Page 14
HM628512B Series Package Dimensions (cont.) HM628512BLFP Series (FP-32D) 20.45 20.95 Max 32 1 1.00 Max 1.27 *0.40 0.08 0.15 0.38 0.06 *Dimension including the plating thickness Base material dimension 14.14 0.10 M Hitachi Code JEDEC EIAJ Weight ...
Page 15
Package Dimensions (cont.) HM628512BLTT Series (TTP-32D) 20.95 21.35 Max 32 1 1.27 *0.42 0.08 0.21 M 0.40 0.06 1.15 Max 0.10 *Dimension including the plating thickness Base material dimension 17 16 11.76 0.20 0 – 5 Hitachi Code JEDEC EIAJ ...
Page 16
... HM628512B Series Package Dimensions (cont.) HM628512BLRR Series (TTP-32DR) 20.95 21.35 Max 1 32 1.27 *0.42 0.08 0.21 M 0.40 0.06 1.15 Max 0.10 *Dimension including the plating thickness Base material dimension 11.76 0.20 0 – 5 Hitachi Code JEDEC EIAJ Weight (reference value) Unit: mm 0.80 0.50 0.10 TTP-32DR Conforms — 0.51 g ...
Page 17
Cautions 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise ...
Page 18
HM628512B Series Revision Record Rev. Date Contents of Modification 0.0 Apr. 24, 1998 Initial issue 0.1 Nov. 19, 1998 DC Characteristics I max: 40/ 100/50 A SB1 Low V Data Retention Characteristics CC I max: 20/ ...