STS3DPF30L STMicroelectronics, STS3DPF30L Datasheet

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STS3DPF30L

Manufacturer Part Number
STS3DPF30L
Description
Manufacturer
STMicroelectronics
Datasheet

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Part Number:
STS3DPF30L
Manufacturer:
ST
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DESCRIPTION
This Power MOSFET is the second generation of
STMicroelectronics unique "Single Feature Size
" strip-based process. The resulting transistor
shows extremely high packing density for low on-
resistance, rugged avalanche characteristics and
less critical alignment steps therefore a remarka-
ble manufacturing reproducibility.
APPLICATIONS
ABSOLUTE MAXIMUM RATINGS
( ) Pulse width limited by safe operating area
Note: For the P-CHANNEL MOSFET actual polarity of voltages and current has to be reversed
May 2000
STS3DPF30L
Symbol
TYPICAL R
STANDARD OUTLINE FOR EASY
AUTOMATED SURFACE MOUNT ASSEMBLY
LOW THRESHOLD DRIVE
BATTERY MANAGMENT IN NOMADIC
EQUIPMENT
POWER MANAGMENT IN CELLULAR
PHONES
DC-DC CONVERTER
I
V
DM
V
V
P
DGR
I
DS
GS
D
tot
TYPE
( )
Drain-source Voltage (V
Drain- gate Voltage (R
Gate-source Voltage
Drain Current (continuous) at Tc = 25
Single Operation
Drain Current (continuous) at T
Single Operation
Drain Current (pulsed)
Total Dissipation at T
Total Dissipation at T
®
DS(on)
V
30 V
= 0.145
DSS
DUAL P - CHANNEL 30V - 0.145 - 3A SO-8
< 0.16
Parameter
R
DS(on)
c
c
GS
= 25
= 25
GS
= 20 k )
= 0)
o
o
C Dual Operation
C Single Operation
c
3 A
= 100
I
D
o
C
o
STripFET
C
INTERNAL SCHEMATIC DIAGRAM
POWER MOSFET
Value
1.9
1.6
STS3DPF30L
30
30
12
SO-8
3
2
20
PRELIMINARY DATA
Unit
W
W
V
V
V
A
A
A
1/5

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STS3DPF30L Summary of contents

Page 1

... Note: For the P-CHANNEL MOSFET actual polarity of voltages and current has to be reversed May 2000 STripFET INTERNAL SCHEMATIC DIAGRAM = 100 Dual Operation Single Operation STS3DPF30L POWER MOSFET PRELIMINARY DATA SO-8 Value Unit 1 1.6 W 1/5 ...

Page 2

... STS3DPF30L THERMAL DATA R *Thermal Resistance Junction-ambient Single Operation thj-amb Maximum Operating Junction Temperature Tj Storage Temperature Tstg (*) Mounted on FR-4 board (t ELECTRICAL CHARACTERISTICS (T OFF Symbol Parameter V Drain-source (BR)DSS Breakdown Voltage I Zero Gate Voltage DSS Drain Current ( Gate-body Leakage GSS Current ( ...

Page 3

... (Resistive Load, see fig. 3) Test Conditions di/dt = 100 150 (see test circuit, fig. 5) STS3DPF30L Min. Typ. Max. Unit 14 5.5 nC 1.7 nC 1.8 nC Min. Typ. Max. Unit Min. Typ. Max. ...

Page 4

... STS3DPF30L DIM. MIN 0 0.65 b 0.35 b1 0. 4 3 4/5 SO-8 MECHANICAL DATA mm TYP. MAX. MIN. 1.75 0.25 0.003 1.65 0.85 0.025 0.48 0.013 0.25 0.007 0.5 0.010 45 (typ.) 5.0 0.188 6.2 0.228 1.27 3.81 4.0 0.14 1.27 0.015 0.6 8 (max.) inch TYP. MAX. 0.068 0.009 0.064 0.033 0.018 0.010 0.019 0.196 0.244 0.050 0.150 0.157 ...

Page 5

... STMicroelectronics – Printed in Italy – All Rights Reserved Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. The ST logo is a trademark of STMicroelectronics STMicroelectronics GROUP OF COMPANIES http://www.st.com STS3DPF30L 5/5 ...

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