HY57V561620BT-H Hynix Semiconductor, HY57V561620BT-H Datasheet
HY57V561620BT-H
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HY57V561620BT-H Summary of contents
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... Bank 16Bit Synchronous DRAM Revision History Revision No. 1.4 This document is a general product description and is subject to change without notice. Hynix Semiconductor Inc. does not assume any responsibility for use of circuits described. No patent licenses are implied. Rev.1.4 / July 2003 4 Banks 16Bit Synchronous DRAM ...
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... Data mask function by UDQM, LDQM • Internal four banks operation ORDERING INFORMATION Part No. Clock Frequency HY57V561620BT-6 HY57V561620BT-7 HY57V561620BT-K HY57V561620BT-H HY57V561620BT-8 HY57V561620BT-P HY57V561620BT-S HY57V561620B(L/S)T-6 HY57V561620B(L/S)T-7 HY57V561620B(L/S)T-K HY57V561620B(L/S)T-H HY57V561620B(L/S)T-8 HY57V561620B(L/S)T-P HY57V561620B(L/S)T-S This document is a general product description and is subject to change without notice. Hynix Semiconductor Inc. does not assume any responsibility for use of circuits described ...
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PIN CONFIGURATION PIN DESCRIPTION PIN PIN NAME CLK Clock CKE Clock Enable CS Chip Select BA0, BA1 Bank Address A0 ~ A12 Address Row Address Strobe, RAS, CAS, WE Column Address Strobe, Write Enable UDQM, LDQM Data Input/Output Mask DQ0 ...
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FUNCTIONAL BLOCK DIAGRAM 4Mbit x 4banks x 16 I/O Synchronous DRAM Self Refresh Logic & Timer CLK Row Active CKE CS RAS CAS WE Column Active UDQM LDQM Bank Select A0 Address A1 Register A12 BA0 BA1 Mode Registers Rev.1.4 ...
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ABSOLUTE MAXIMUM RATINGS Parameter Ambient Temperature Storage Temperature Voltage on Any Pin relative Voltage on V relative Short Circuit Output Current Power Dissipation Soldering Temperature ⋅ Time Note : Operation at above absolute ...
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CAPACITANCE (TA=25 °C , f=1MHz) Parameter Input capacitance CLK A0 ~ A12, BA0, BA1, CKE, CS, RAS, CAS, WE, UDQM, LDQM Data input / output capacitance DQ0 ~ DQ15 OUTPUT LOAD CIRCUIT Output DC Output Load Circuit DC CHARACTERISTICS I ...
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... Self Refresh Current I DD6 Note : 1.I and I depend on output loading and cycle rates. Specified values are measured with the output open DD1 DD4 2.Min. of tRRC (Refresh RAS cycle time) is shown at AC CHARACTERISTICS II 3.HY57V561620BT-6/7/K/H/8/P/S 4.HY57V561620BLT-6/7/K/H/8/P/S 5.HY57V561620BST-6/7/K/H/8/P/S Rev.1.4 / July 2003 ± (TA ° =3.3 0.3V, V =0V) DD ...
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AC CHARACTERISTICS I Parameter Symbol CAS Latency = 3 tCK3 System Clock Cycle Time CAS Latency = 2 tCK2 Clock High Pulse Width tCHW Clock Low Pulse Width tCLW CAS Latency = 3 tAC3 Access Time From Clock CAS Latency ...
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AC CHARACTERISTICS II Parameter Symbol Operation tRC RAS Cycle Time Auto Refresh tRRC RAS to CAS Delay tRCD RAS Active Time tRAS RAS Precharge Time tRP RAS to RAS Bank Active Delay tRRD CAS to CAS Delay tCCD Write Command ...
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IBIS SPECIFICATION I Characteristics (Pull-up) OH 100MHz 100MHz Voltage (Min) (Max) (V) I(mA) I(mA) 3.45 -2.4 3.3 -27.3 3.0 0 -74.1 2.6 -21.1 -129.2 2.4 -34.1 -153.3 2.0 -58.7 -197 1.8 -67.3 -226.2 1.65 -73 -248 1.5 -77.9 -269.7 1.4 ...
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DEVICE OPERATING OPTION TABLE HY57V561620B(L/S)T-6 CAS Latency 166MHz(6ns) 3CLKs 143MHz(7ns) 3CLKs 133MHz(7.5ns) 2CLKs HY57V561620B(L/S)T-7 CAS Latency 143MHz(7ns) 3CLKs 133MHz(7.5ns) 2CLKs 125MHz(8ns) 3CLKs HY57V561620B(L/S)T-K CAS Latency 133MHz(7.5ns) 2CLKs 125MHz(8ns) 3CLKs 100MHz(10ns) 2CLKs HY57V561620B(L/S)T-H CAS Latency 133MHz(7.5ns) 3CLKs 125MHz(8ns) 3CLKs 100MHz(10ns) 2CLKs ...
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COMMAND TRUTH TABLE Command CKEn-1 Mode Register Set No Operation Bank Active Read Read with Autoprecharge Write Write with Autoprecharge Precharge All Banks Precharge selected Bank Burst Stop DQM Auto Refresh Burst-Read-Single- WRITE Entry 1 Self Refresh Exit Entry Precharge ...
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PACKAGE INFORMATION 400mil 54pin Thin Small Outline Package 22.327(0.8790) 22.149(0.8720) 0.150(0.0059) 0.050(0.0020) 0.400(0.016) 0.80(0.0315)BSC 0.300(0.012) Rev.1.4 / July 2003 HY57V561620B(L/S)T UNIT : mm(inch) 11.938(0.4700) 11.735(0.4620) 10.262(0.4040) 10.058(0.3960) 5deg 0.210(0.0083) 0.597(0.0235) 0deg 0.406(0.0160) 0.120(0.0047) 1.194(0.0470) 0.991(0.0390) 13 ...