W27E257P-12 Winbond, W27E257P-12 Datasheet
W27E257P-12
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W27E257P-12 Summary of contents
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ELECTRICALLY ERASABLE EPROM GENERAL DESCRIPTION The W27E257 is a high-speed, low-power Electrically Erasable and Programmable Read Only Memory organized as 32768 provides an electrical chip erase function. This part was the same EPROM Writer's utilities as the W27E256. ...
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FUNCTIONAL DESCRIPTION Read Mode Like conventional UVEPROMs, the W27E257 has two control functions, both of which produce data at the outputs for power control and chip select. OE controls the output buffer to gate data to the output ...
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Standby Mode The standby mode significantly reduces V standby mode, all outputs are in a high impedance state, independent of OE. Two-line Output Control Since EPROMs are often used in large memory arrays, the W27E257 provides two control inputs for ...
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DC CHARACTERISTICS Absolute Maximum Ratings PARAMETER Ambient Temperature with Power Applied Storage Temperature Voltage on all pins with Respect to Ground Except V and V pins CC Voltage on V Pin with Respect to Ground PP Voltage on A9 Pin ...
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AC CHARACTERISTICS AC Test Conditions PARAMETER Input Pulse Levels Input Rise and Fall Times Input and Output Timing Reference Level Output Load AC Test Load and Waveform D OUT Input 2.4V 0.45V 0.45V to 2. 0.8V/2. ...
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READ OPERATION DC CHARACTERISTICS (V = 5.0V 10 (W27E257-10, S-10, K-10, P-10 min. = 3.0V and max. = 5.5V) CC PARAMETER SYM. Input Load Current I LI Output Leakage Current ...
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DC PROGRAMMING CHARACTERISTICS (V = 5.0V 10 PARAMETER Input Load Current V Program Current CC V Program Current PP Input Low Voltage Input High Voltage Output Low Voltage (Verify) Output High Voltage ...
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TIMING WAVEFORMS AC Read Waveform V IH Address High Z Outputs Erase Waveform Read Manufacturer SID A0= V Others = Address ...
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Timing Waveforms, continued Programming Waveform V IH Address V IL Data 12. 5. Program Program Verify Address Stable Address Stable T DFP Data In ...
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SMART PROGRAMMING ALGORITHM Increment Address Start Address = First Location Vcc = 5V Vpp = 12V Program One 100 S Pulse Increment X Yes X = 25? No Fail Verify One Byte Pass No Last Address? Yes ...
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SMART ERASE ALGORITHM No Increment Address Start Vcc = 5V Vpp = 14V A9 = 14V Chip Erase 100 mS Pulse Address = First Location Increment X Fail Erase Verify Pass Last Address? ...
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... W27E257-12 120 W27E257-15 150 W27E257P-10 100 W27E257P-12 120 W27E257P-15 150 Notes: 1. Winbond reserves the right to make changes to its products without prior notice. 2. Purchasers are responsible for performing appropriate quality assurance testing on products intended for use in applications where personal injury might occur as a consequence of product failure. ...
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PACKAGE DIMENSIONS 28-pin P-DIP 32-pin PLCC Seating Plane 1 G ...
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... No. 115, Sec. 3, Min-Sheng East Rd., Taipei, Taiwan TEL: 886-2-7190505 FAX: 886-2-7197502 Note: All data and specifications are subject to change without notice. Winbond Electronics North America Corp. Winbond Memory Lab. Winbond Microelectronics Corp. Winbond Systems Lab. 2730 Orchard Parkway, San Jose, CA 95134, U ...