RFP10P03L Fairchild Semiconductor, RFP10P03L Datasheet

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RFP10P03L

Manufacturer Part Number
RFP10P03L
Description
Power dissipation 60 W Transistor polarity P Channel Current Id cont. 10 A Current Idm pulse 25 A Voltage Vgs th max. 2 V Pitch lead 2.54 mm Voltage Vds max 30 V Resistance Rds on 0.2 R
Manufacturer
Fairchild Semiconductor
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
RFP10P03L
Manufacturer:
IXYS
Quantity:
50 000
May 1997
CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures.
Copyright
Features
• 10A, 30V
• r
• Temperature Compensating PSPICE Model
• PSPICE Thermal Model
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• 175
Ordering Information
NOTE: When ordering, use the entire part number. Add the suffix, 9A,
to obtain the TO-252AA variant in tape and reel, i.e. RFD10P03LSM 9A..
Formerly developmental type TA49205.
Packaging
RFD10P03L
RFD10P03LSM
RFP10P03L
DS(ON)
PART NUMBER
©
o
C Operating Temperature
Harris Corporation 1997
S E M I C O N D U C T O R
DRAIN (FLANGE)
= 0.200
TO-251AA
TO-252AA
TO-220AB
JEDEC TO-220AB
PACKAGE
10P03L
10P03L
F10P03L
SOURCE
DRAIN
BRAND
GATE
GATE
RFD10P03L, RFD10P03LSM,
SOURCE
JEDEC TO-252AA
1
DRAIN (FLANGE)
Description
These products are P-Channel power MOSFETs manufac-
tured using the MegaFET process. This process, which uses
feature sizes approaching those of LSI circuits, gives opti-
mum utilization of silicon, resulting in outstanding perfor-
mance. They were designed for use in applications such as
switching regulators, switching converters, motor drivers,
and relay drivers. These transistors can be operated directly
from integrated circuits.
Symbol
DRAIN (FLANGE)
10A, 30V, 0.200 , Logic Level
P-Channel Power MOSFET
JEDEC TO-251AA
G
RFP10P03L
D
S
SOURCE
File Number
DRAIN
GATE
3515.1

Related parts for RFP10P03L

RFP10P03L Summary of contents

Page 1

... These transistors can be operated directly from integrated circuits. Symbol BRAND 10P03L 10P03L F10P03L SOURCE DRAIN GATE DRAIN (FLANGE) JEDEC TO-252AA DRAIN (FLANGE) GATE SOURCE 1 RFP10P03L 10A, 30V, 0.200 , Logic Level P-Channel Power MOSFET JEDEC TO-251AA SOURCE DRAIN GATE File Number 3515.1 ...

Page 2

... RFD10P03L, RFD10P03LSM, RFP10P03L Absolute Maximum Ratings T C Drain to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V Drain to Gate Voltage (R = 20K . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V GS Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V Drain Current RMS Continuous Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I Single Pulse Avalanche Rating Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .P o Derate Above ...

Page 3

... RFD10P03L, RFD10P03LSM, RFP10P03L Typical Performance Curves 1.2 1.0 0.8 0.6 0.4 0.2 0 100 T , CASE TEMPERATURE ( C FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE TEMPERATURE 2.0 1.0 0.5 0.2 0.1 0.1 0.05 0.02 0.01 SINGLE PULSE 0. FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE -100 -10 OPERATION IN THIS AREA MAY BE LIMITED BY r DS(ON) V MAX = -30V DSS - DRAIN TO SOURCE VOLTAGE (V) DS FIGURE 4 ...

Page 4

... RFD10P03L, RFD10P03LSM, RFP10P03L Typical Performance Curves -50 -10 o STARTING T = 150 (L) (I )/(1.3 RATED DSS (L/R) ln [(I *R)/(1.3 RATED 0.01 0 TIME IN AVALANCHE (ms) AV NOTE: Refer to Application Notes AN9321 and AN9322. FIGURE 6. UNCLAMPED INDUCTIVE SWITCHING CAPABILITY -25 -55 PULSE TEST PULSE DURATION = 250 s DUTY CYCLE = 0 ...

Page 5

... RFD10P03L, RFD10P03LSM, RFP10P03L Typical Performance Curves 1 1.0 0.8 0.6 0.4 -80 - JUNCTION TEMPERATURE ( J FIGURE 12. NORMALIZED GATE THRESHOLD VOLTAGE vs JUNCTION TEMPERATURE - = DSS -22 3 -0.25mA -15 G(REF) 0.75 BV 0.75 BV DSS DSS 0.50 BV 0.50 BV DSS DSS 0.25 BV 0.25 BV -7.5 DSS DSS G(REF) t, TIME ( G(ACT) NOTE: Refer to Application Notes AN7254 and AN7260 ...

Page 6

... RFD10P03L, RFD10P03LSM, RFP10P03L Test Circuits and Waveforms VARY t TO OBTAIN P R REQUIRED PEAK FIGURE 16. UNCLAMPED ENERGY TEST CIRCUIT DUT FIGURE 18. SWITCHING TIME TEST CIRCUIT G(REF) FIGURE 20. GATE CHARGE TEST CIRCUIT ...

Page 7

... RFD10P03L, RFD10P03LSM, RFP10P03L PSpice Electrical Model .SUBCKT RFD10P03L REV 22 Aug 1.29e 9.90e-10 CIN 6 8 1.01e-9 DBODY 5 7 DBODYMOD DBREAK 7 11 DBREAKMOD DPLCAP 10 6 DPLCAPMOD EBREAK -36.49 EDS EGS ESG EVTHRES ...

Page 8

... RFD10P03L, RFD10P03LSM, RFP10P03L PSpice Thermal Model REV 29 Aug 96 RFP10P03L CTHERM1 7 6 5.00e-7 CTHERM2 6 5 5.35e-4 CTHERM3 5 4 5.50e-4 CTHERM4 4 3 1.75e-3 CTHERM5 3 2 1.25e-2 CTHERM6 2 1 0.45 RTHERM1 7 6 1.00e-2 RTHERM2 6 5 2.05e-2 RTHERM3 5 4 5.39e-2 RTHERM4 4 3 5.45e-1 RTHERM5 3 2 1.01 RTHERM6 2 1 0.50 RFD10P03L, RFD10P03LSM CTHERM1 ...

Page 9

... RFD10P03L, RFD10P03LSM, RFP10P03L TO-220AB 3 LEAD JEDEC TO-220AB PLASTIC PACKAGE E Ø LEAD NO GATE LEAD NO DRAIN LEAD NO SOURCE TERM DRAIN A SYMBOL TERM ...

Page 10

... RFD10P03L, RFD10P03LSM, RFP10P03L TO-251AA 3 LEAD JEDEC TO-251AA PLASTIC PACKAGE LEAD NO GATE LEAD NO DRAIN LEAD NO SOURCE TERM DRAIN A SYMBOL MIN 0.086 TERM 0.018 SEATING 1 PLANE b 0.028 b 0.033 1 b 0.205 ...

Page 11

... RFD10P03L, RFD10P03LSM, RFP10P03L TO-252AA SURFACE MOUNT JEDEC TO-252AA PLASTIC PACKAGE TERM 0.070 (1.8) BACK VIEW 0.063 (1.6) 0.090 (2.3) MINIMUM PAD SIZE RECOMMENDED FOR SURFACE-MOUNTED APPLICATIONS LEAD NO GATE LEAD NO SOURCE TERM DRAIN ...

Page 12

... RFD10P03L, RFD10P03LSM, RFP10P03L TO-252AA 16mm TAPE AND REEL 330mm All Harris Semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification. Harris Semiconductor products are sold by description only. Harris Semiconductor reserves the right to make changes in circuit design and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Harris is believed to be accurate and reliable. However, no responsibility is assumed by Harris or its subsidiaries for its use ...

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