KM416S8030T-F10 Samsung, KM416S8030T-F10 Datasheet

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KM416S8030T-F10

Manufacturer Part Number
KM416S8030T-F10
Description
Manufacturer
Samsung
Datasheet

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Part Number:
KM416S8030T-F10
Manufacturer:
SAMSUNG
Quantity:
6
KM416S8030
2M x 16Bit x 4 Banks Synchronous DRAM
FEATURES
• JEDEC standard 3.3V power supply
• LVTTL compatible with multiplexed address
• Four banks operation
• MRS cycle with address key programs
• All inputs are sampled at the positive going edge of the system
• Burst Read Single-bit Write operation
• DQM for masking
• Auto & self refresh
• 64ms refresh period (4K cycle)
FUNCTIONAL BLOCK DIAGRAM
clock.
-. CAS Latency (2 & 3)
-. Burst Length (1, 2, 4, 8 & full page)
-. Burst Type (Sequential & Interleave)
ADD
CLK
LCKE
CLK
LRAS
CKE
Bank Select
LCBR
CS
LWE
RAS
Timing Register
LCAS
CAS
Latency & Burst Length
GENERAL DESCRIPTION
rate Dynamic RAM organized as 4 x 2,097,152 words by 16
bits, fabricated with SAMSUNG s high performance CMOS
technology. Synchronous design allows precise cycle control
with the use of system clock I/O transactions are possible on
every clcok cycle. Range of operating frequencies, programma-
ble burst length and programmable latencies allow the same
device to be useful for a variety of high bandwidth, high perfor-
mance memory system applications.
ORDERING INFORMATION
Programming Register
WE
The KM416S8030 is 134,217,728 bits synchronous high data
Data Input Register
KM416S8030T-G/F8
KM416S8030T-G/FH
KM416S8030T-G/FL
KM416S8030T-G/F10
Column Decoder
2M x 16
2M x 16
2M x 16
2M x 16
Part NO.
LDQM
LWCBR
UDQM
*
Samsung Electronics reserves the right to
change products or specification without
notice.
MAX Freq.
125MHz
100MHz
100MHz
100MHz
Preliminary
CMOS SDRAM
REV. 2 Mar. '98
LDQM
Interface Package
LVTTL
LWE
LDQM
DQi
TSOP(II)
54pin

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KM416S8030T-F10 Summary of contents

Page 1

... ORDERING INFORMATION KM416S8030T-G/F8 KM416S8030T-G/FH KM416S8030T-G/FL KM416S8030T-G/F10 Data Input Register Column Decoder Latency & Burst Length ...

Page 2

KM416S8030 PIN CONFIGURATION (TOP VIEW) A10/AP PIN FUNCTION DESCRIPTION PIN NAME CLK System Clock CS Chip Select CKE Clock Enable Address Bank Select Address 0 1 RAS Row Address Strobe CAS Column ...

Page 3

KM416S8030 ABSOLUTE MAXIMUM RATINGS Parameter Voltage on any pin relative to Vss Voltage on V supply relative to Vss DD Storage temperature Power dissipation Short circuit current Note : Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded. ...

Page 4

... Bank Active CC3 Operating Current I CC4 (Burst Mode) Refresh Current I CC5 Self Refresh Current I CC6 Note : 1. Measured with outputs open. 2. Refresh period is 64ms. 3. KM416S8030T-G** 4. KM416S8030T-F CAS Test Condition Latency Burst Length = (min CKE V (max), t ...

Page 5

KM416S8030 AC OPERATING TEST CONDITIONS Parameter Input levels (Vih/Vil) Input timing measurement reference level Input rise and fall time Output timing measurement reference level Output load condition 3.3V 1200 Output 50pF 870 (Fig Output Load Circuit OPERATING AC ...

Page 6

KM416S8030 AC CHARACTERISTICS (AC operating conditions unless otherwise noted) Parameter Symbol CAS latency=3 CLK cycle time t CC CAS latency=2 CAS latency=3 CLK to valid t SAC output delay CAS latency=2 CAS latency=3 Output data t OH hold time CAS ...

Page 7

KM416S8030 IBIS Specification I Characteristics(Pull-up) OH Voltage 100Mhz 100Mhz min max (V) I(mA) I(mA) 3.45 -2.4 3.3 -27 -74.1 2.6 -21.1 -129.2 2.4 -34.1 -153.3 2 -58.7 -197 1.8 -67.3 -226.2 1.65 -73 -248 1.5 -77.9 -269.7 1.4 ...

Page 8

KM416S8030 V Clamp @CLK,CKE, CS,DQM & VDD I(mA) 0.0V 0.0mA 0.2V 0.0mA 0.4V 0.0mA 0.6V 0.0mA 0.7V 0.0mA 0.8V 0.0mA 0.9V 0.0mA 1.0V 0.23mA 1.2V 1.34mA 1.4V 3.02mA 1.6V 5.06mA 1.8V 7.35mA 2.0V 9.83mA 2.2V 12.48mA 2.4V 15.30mA ...

Page 9

... KM416S8030T-L CAS Frequency Latency 100MHz (10.0ns) 3 83MHz (12.0ns) 2 75MHz (13.0ns) 2 66MHz (15.0ns) 2 60MHz (16.7ns) 2 KM416S8030T-10 CAS Frequency Latency 100MHz (10.0ns) 3 83MHz (12.0ns) 3 75MHz (13.0ns) 2 66MHz (15.0ns) 2 60MHz (16.7ns RAS RP RRD ...

Page 10

KM416S8030 SIMPLIFIED TRUTH TABLE COMMAND Register Mode Register Set Auto Refresh Entry Refresh Self Refresh Exit Bank Active & Row Addr. Read & Auto Precharge Disable Column Address Auto Precharge Enable Write & Auto Precharge Disable Column Address Auto Precharge ...

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