LH5116D-10 Sharp, LH5116D-10 Datasheet

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LH5116D-10

Manufacturer Part Number
LH5116D-10
Description
CMOS 16K (2K x 8)static RAM
Manufacturer
Sharp
Datasheet

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Part Number:
LH5116D-10
Manufacturer:
SHARP
Quantity:
6 000
Part Number:
LH5116D-10
Manufacturer:
SHARP
Quantity:
6 000
Part Number:
LH5116D-10
Manufacturer:
SHARP
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Part Number:
LH5116D-10
Manufacturer:
SHARP
Quantity:
20 000
LH5116/H
FEATURES
2,048
Access time: 100 ns (MAX.)
Power consumption:
Single +5 V power supply
Fully-static operation
TTL compatible I/O
Three-state outputs
Wide temperature range available
Packages:
Operating: 220 mW (MAX.)
Standby: 5.5 W (MAX.)
LH5116H: -40 to +85 C
24-pin, 600-mil DIP
24-pin, 300-mil SK-DIP
24-pin, 450-mil SOP
8 bit organization
DESCRIPTION
bits. It is fabricated using silicon-gate CMOS process
technology. It features high speed access in read mode
using output enable (t
PIN CONNECTIONS
The LH5116/H are static RAMs organized as 2,048 8
24-PIN DIP
24-PIN SK-DIP
24-PIN SOP
Figure 1. Pin Connections for DIP, SK-DIP,
CMOS 16K (2K
GND
I/O
I/O
I/O
A
A
A
A
A
A
A
A
7
6
5
4
3
0
2
3
and SOP Packages
2
1
1
10
12
11
4
7
9
1
2
3
5
6
8
OE
).
20
24
23
22
19
18
17
16
15
14
13
21
8) Static RAM
WE
A
I/O
Vcc
A
A
OE
CE
I/O
I/O
I/O
I/O
8
9
10
8
7
6
5
4
TOP VIEW
5116-1
1

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LH5116D-10 Summary of contents

Page 1

LH5116/H FEATURES 2,048 8 bit organization Access time: 100 ns (MAX.) Power consumption: Operating: 220 mW (MAX.) Standby: 5.5 W (MAX.) Single +5 V power supply Fully-static operation TTL compatible I/O Three-state outputs Wide temperature range available LH5116H: -40 to ...

Page 2

LH5116 I I I I/O ...

Page 3

CMOS 16K (2K 8) Static RAM ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL Supply voltage V CC Input voltage V IN Operating temperature Topr Storage temperature Tstg NOTES: 1. The maximum applicable voltage on any pin with respect to GND. 2. Applied ...

Page 4

LH5116/H 1 (2) WRITE CYCLE ( 10%) CC PARAMETER Write cycle time Chip enable to end of write Address valid time Address setup time Write pulse width Write recovery time Output active from end of write WE ...

Page 5

CMOS 16K (2K 8) Static RAM V CC 4 CCDR OUT NOTE "HIGH" t DATA RETENTION MODE CDR CE V -0.2 V CCDR ...

Page 6

LH5116 OUT 'LOW' NOTES must be HIGH when there is a change When CE and WE are both LOW at the same time, ...

Page 7

CMOS 16K (2K 8) Static RAM ACCESS TIME VS. SUPPLY VOLTAGE 1.2 1.1 1.0 0.9 0.8 4.0 4.5 5.0 SUPPLY VOLTAGE V AVERAGE SUPPLY CURRENT VS. SUPPLY VOLTAGE 4.0 4.5 5.0 SUPPLY VOLTAGE V INPUT ...

Page 8

LH5116/H PACKAGE DIAGRAMS 24DIP (DIP024-P-0600 31.30 [1.232] 30.70 [1.209] 2.54 [0.100] 0.60 [0.024] TYP. 0.40 [0.016] MAXIMUM LIMIT DIMENSIONS IN MM [INCHES] MINIMUM LIMIT 24SDIP (SDIP024-P-0300 22.25 [0.876] 21.75 [0.856] 1.778 [0.070] 0.56 [0.022] TYP. 0.36 ...

Page 9

CMOS 16K (2K 8) Static RAM 24SOP (SOP024-P-0450B) 1.27 [0.050] TYP. 0.50 [0.120] 0.30 [0.012 15.60 [0.614] 15.20 [0.598] MAXIMUM LIMIT DIMENSIONS IN MM [INCHES] MINIMUM LIMIT 1.70 [0.067] 13 8.80 [0.346] 12.40 [0.488] 8.40 [0.331] 11.60 [0.457] ...

Page 10

LH5116/H ORDERING INFORMATION (T LH5116 Device Type Package Example: LH5116N-10 (CMOS 16K ( Static RAM, 100 ns, 24-pin, 450-mil SOP) ORDERING INFORMATION (T LH5116H Device Type Package Example: LH5116HN-10 (CMOS 16K ( Static RAM, 100 ns, ...

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