PK110FG160 Sanrex Corp., PK110FG160 Datasheet

PK110FG160

Manufacturer Part Number

PK110FG160

Description

THYRISTOR MODULE

Manufacturer

Sanrex Corp.

Datasheet

1.PK110FG160.pdf (2 pages)

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（Applications）

Power Thyristor/Diode Module PK110FG series are designed for various rectifier

circuits and power controls. For your circuit application, following internal connections

and wide voltage ratings up to 1600V are available. and electrically isolated mounting

base make your mechanical design easy.

Various rectifiers

AC/DC motor drives

Heater controls

Light dimmers

Static switches

■Maximum Ratings

■Electrical Characteristics

＊mark：Thyristor and Diode part. No mark：Thyristor part

SanRex 50 Seaview Blvd. Port Washington, NY 11050-4618 PH.(516)625-1313 FAX(516)625-8845 E-mail: semi@sanrex.com

●

Rth （ j-c）＊Thermal Impedance,max

Symbol

di/dt 100A/ μs

dv/dt 1000V/ μs

dv/dt

T （ RMS）

T(AV)

di/dt

Tstg

T （ AV）

G （AV）

FGM

DRM

RRM

TSM

RGM

RRM

RSM

DRM

FGM

ISO

THYRISTOR MODULE

110A, I

＊Repetitive Peak Reverse Voltage

＊Non-Repetitive Peak Reverse Voltage

＊Repetitive Peak off-state Voltage

＊Average On-state Current

＊R.M.S. On-state Current

＊Surge On-state Current

＊I

＊Isolation Breakdown Voltage （R.M.S.）

＊Operating Junction Temperature

＊Storage Temperature

＊Repetitive Peak Reverse Current,max

＊On-state Voltage,max

Mounting

Torque

Mass

Peak Gate Power Dissipation

Average Gate Power Dissipation

Peak Gate Current

Peak Gate Voltage (Forward)

Peak Gate Voltage (Reverse)

Critical Rate of Rise of On-state Current

Repetitive Peak off-state Current,max

Gate Trigger Current,max

Gate Trigger Voltage,max

Gate Non-Trigger Voltage,min

Critical Rate of Rise of off-state Voltage,min

T(RMS)

( PD,PE )

172A, I

Item

TSM

Mounting （M5）

Terminal （ M5）

3000A

110FG

Internal Configurations

Single phase, half wave, 180° conduction, Tc＝81℃

Value for one cycle surge current

A.C. 1minute

Recommended Value 1.5-2.5（15-25）

Typical Value

Tj＝125℃，V

Junction to case

／

PK110FG40

PD110FG40

PE110FG40

A1K2

＝330A

＝100mA， V

＝6V，I

Cycle, 50/60H

400

480

400

（K2）

（A2）

＝1A

＝

＝V

＝

／

, Peak Value, non-repetitive

DRM

Conditions

PK110FG80

PD110FG80

PE110FG80

DRM

A1K2

800

960

800

， di

（K2）

/dt＝0.1A/ μs

Ratings

（A2）

PK110FG120

PD110FG120

PE110FG120

（Tj＝25℃ unless otherwise specified）

1200

1300

1200

２ - φ6．０

2 ０．０ 2 ０．０ 2 ０．０

−40 to ＋125

PK110FG160

PD110FG160

PE110FG160

2740/3000

2.7（28）

Ratings

NAME PLATE

M ５ ×1 ０

８０．０ ± ０．２

37500

2500

1000

0.25

1.6

1600

1700

1600

110

172

100

170

92．０

UL;E76102 （ M）

１７．５

２．８

4-＃１１０ TAB

（㎏f･B）

Unit：

Ratings

A/ μs

℃/W

V/ μs

N･m

Unit

℃

Related parts for PK110FG160

PK110FG160 Summary of contents

Page 1

... M ５ ×1 ０（A2） NAME PLATE PE ８０．０ ± ０．２（Tj＝25℃ unless otherwise specified） Ratings PK110FG120 PK110FG160 PD110FG120 PD110FG160 PE110FG120 PE110FG160 1200 1600 1300 1700 1200 1600 Ratings 110 ...

Page 2

Gate Characteristics １００５０２０ V （10V） FGM １０５２２５ ℃ １０．５０．２０．１１０２０５０１００ ...

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