CY8C5247LTI-089 Cypress Semiconductor Corp, CY8C5247LTI-089 Datasheet - Page 80

• Manufacturer Part Number: CY8C5247LTI-089
• Manufacturer: Cypress Semiconductor Corp

Specifications of CY8C5247LTI-089

• Lead Free Status / Rohs Status: Compliant

11.7 Memory
Specifications are valid for –40 °C ≤ T
where noted.
11.7.1 Flash
Table 11-43. Flash DC Specifications
Table 11-44. Flash AC Specifications
11.7.2 EEPROM
Table 11-45. EEPROM DC Specifications
Document Number: 001-66236 Rev. *A
T
T
T
Parameter
Parameter
Parameter
WRITE
ERASE
BULK
Row write time (erase + program)
Row erase time
Row program time
Bulk erase time (256 KB)
Sector erase time (16 KB)
Total device program time
(including SWD and other overhead)
Flash data retention time, retention
period measured from last erase cycle
Erase and program voltage
Erase and program voltage
Description
Description
Description
A
≤ 85 °C and T
Figure 11-40. Clock to Output Performance
PRELIMINARY
J
≤ 100 °C, except where noted. Specifications are valid for 2.7 V to 5.5 V, except
V
Average ambient temp.
T
cycles
Average ambient temp.
T
cycles
DDD
A
A
≤ 55 °C, 100 K erase/program
≤ 85 °C, 10 K erase/program
pin
Conditions
Conditions
Conditions
PSoC
®
5: CY8C52 Family Datasheet
Min
Min
Min
2.7
2.7
20
10
–
–
–
–
–
–
Typ
Typ
Typ
15
10
–
5
–
–
–
–
–
–
Max
Max
Max
5.5
140
5.5
20
13
15
20
7
–
–
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seconds
Units
Units
Units
years
ms
ms
ms
ms
ms
V
V