PEF 82912 F V1.4 Infineon Technologies, PEF 82912 F V1.4 Datasheet - Page 4

• Manufacturer Part Number: PEF 82912 F V1.4
• Description: IC MODULAR ISDN NT INTELL TQFP64
• Manufacturer: Infineon Technologies
• Series: Q-SMINT®r

Specifications of PEF 82912 F V1.4

• Function: Second Generation Modular
• Interface: ISDN
• Mounting Type: Surface Mount
• Package / Case: 64-LFTQFP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Supply: -
• Voltage - Supply: -
• Power (watts): -
• Operating Temperature: -
• Number Of Circuits: -
• Other names: PEF82912FV1.4XT; PEF82912FV14XP; SP000007558; SP000007559

PEF 80912/80913
Revision History:
Previous Version:
Page
All
Table
Chapter 1.3
Chapter
2.4.5.1
Chapter
2.4.5.1
Figure 16
Chapter 4.1
Chapter 4.1
Chapter 4.2
Table 19
Chapter
4.6.3
Chapter 6.3
For questions on technology, delivery and prices please contact the Infineon
Technologies Offices in Germany or the Infineon Technologies Companies and
Representatives worldwide: see our webpage at http://www.infineon.com
1,
Subjects (major changes since last revision)
Editorial changes, addition of notes for clarification etc.
introduced new version 80913 with extended performance of the U-interface
S-transceiver NT state machine:
added note : ’By setting the Test Mode pins TM0-2 to ’010’ / ’011’: Continuous
Pulses / Single Pulses, the S-transceiver starts sending the corresponding test
signal, but no state transition is invoked.’
C/I commands: removed ’unconditional command’ from description C/I-command
’DR’
Corrected figure: ’Complete Activation Initiated by Exchange’:
info4 is sent by the NT (not byTE)
Absolute Maximum Ratings: Maximum Voltage on VDD: 4.2V (before: 4.6V)
Refined references for ESD requirements:’ ...(CDM), EIA/JESD22-A114B (HBM) ---’
Input/output leakage current set to 10µA (before: 1µA)
U-transceiver characteristics: enhanced S/N+D for 80913 and threshold level for
80912 and 80913 distinguished
Parameters of the UVD/POR Circuit:
defined reduced range of hysteresis: min. 30mV/max. 90mV
relaxed upper limit of Detection Threshold to 2.92V (before: 2.9V)
defined max. rising VDD for power-on
External circuitry for T-SMINT updated
March 2001
Preliminary Data Sheet 10.00
DS 1