Q62702-P0030 OSRAM Opto Semiconductors Inc, Q62702-P0030 Datasheet

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Q62702-P0030

Manufacturer Part Number
Q62702-P0030
Description
Manufacturer
OSRAM Opto Semiconductors Inc
Datasheet

Specifications of Q62702-P0030

Phototransistor Type
Phototransistor
Polarity
NPN
Number Of Elements
3
Lens Type
Transparent
Collector-emitter Voltage
35V
Collector Current (dc) (max)
50mA
Collector-emitter Sat Volt (max)
0.15V
Dark Current (max)
50nA
Light Current
320uA
Power Dissipation
90mW
Peak Wavelength
850nm
Half-intensity Angle
36deg
Operating Temp Range
-40C to 80C
Operating Temperature Classification
Commercial
Mounting
Through Hole
Pin Count
6
Lead Free Status / Rohs Status
Compliant
NPN-Silizium-Fototransistor Zeilen
Silicon NPN Phototransistor Arrays
Lead (Pb) Free Product - RoHS Compliant
BPX 80
BPX 82 … 89
Wesentliche Merkmale
• Speziell geeignet für Anwendungen im Bereich
• Hohe Linearität
• Mehrstellige Zeilenbauform aus klarem Epoxy
• Gruppiert lieferbar
Anwendungen
• Miniaturlichtschranken für Gleich- und
• Industrieelektronik
• „Messen/Steuern/Regeln“
Typ
Type
BPX 82
BPX 83
BPX 84
BPX 85
BPX 86
BPX 87
BPX 88
BPX 89
BPX 80
2007-04-04
von 450 nm bis 1100 nm
Wechsellichtbetrieb
Bestellnummer
Ordering Code
Q62702P0021
Q62702P0025
Q62702P0030
Q62702P0031
Q62702P0022
Q62702P0032
Q62702P0033
Q62702P0026
Q62702P0028
Fotostrom ,
Photocurrent
I
> 0.32
> 0.32
> 0.32
> 0.32
> 0.32
> 0.32
> 0.32
> 0.32
> 0.32
PCE
(mA)
1
Features
• Especially suitable for applications from
• High linearity
• Multiple-digit array package of transparent
• Available in groups
Applications
• Miniature photointerrupters
• Industrial electronics
• For control and drive circuits
450 nm to 1100 nm
epoxy
E
e
= 0.5 mW/cm
2
, λ = 950 nm
, V
CE
= 5 V

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Q62702-P0030 Summary of contents

Page 1

... BPX 82 Q62702P0021 BPX 83 Q62702P0025 BPX 84 Q62702P0030 BPX 85 Q62702P0031 BPX 86 Q62702P0022 BPX 87 Q62702P0032 BPX 88 Q62702P0033 BPX 89 Q62702P0026 BPX 80 Q62702P0028 2007-04-04 Features • Especially suitable for applications from 450 nm to 1100 nm • High linearity • Multiple-digit array package of transparent epoxy • Available in groups Applications • ...

Page 2

Grenzwerte Maximum Ratings Bezeichnung Parameter Betriebs- und Lagertemperatur Operating and storage temperature range Kollektor-Emitterspannung Collector-emitter voltage Kollektorstrom Collector current Kollektorspitzenstrom, τ < 10 μs Collector surge current = 25 °C Verlustleistung Total power dissipation Wärmewiderstand Thermal resistance 2007-04-04 ...

Page 3

T Kennwerte ( A Characteristics Bezeichnung Parameter Wellenlänge der max. Fotoempfindlichkeit Wavelength of max. sensitivity Spektraler Bereich der Fotoempfindlichkeit 10% von max Spectral range of sensitivity 10% ...

Page 4

Die Fototransistoren werden nach ihrer Fotoempfindlichkeit gruppiert und mit Buchstaben gekennzeichnet. The phototransistors are grouped according to their spectral sensitivity and distinguished by alphabetic characters. Bezeichnung Parameter Fotostrom Photocurrent , λ = 950 0.5 mW/cm E ...

Page 5

Relative Spectral Sensitivity (λ) rel 100 % 90 Srel 400 500 600 700 800 900 1000 1100 nm lambda Photocurrent ...

Page 6

Maßzeichnung Package Outlines Maß (inch) / Dimensions in mm (inch). . Transistoren pro Zeile Number of Transistors per Array 2007-04-04 Chip position 7.4 (0.291) 7.0 (0.276) 0.5 (0.020) 0.4 ...

Page 7

Lötbedingungen Soldering Conditions Wellenlöten (TTW) TTW Soldering 300 C 250 T 235 C ... 260 C 200 1. Welle 1. wave 150 ca 200 K/s 100 C ... 130 C 100 Published by OSRAM Opto Semiconductors ...

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