MCH3383-TL-H ON Semiconductor, MCH3383-TL-H Datasheet - Page 2

• Manufacturer Part Number: MCH3383-TL-H
• Description: MOSFET Power SWITCHING DEVICE
• Manufacturer: ON Semiconductor

Specifications of MCH3383-TL-H

• Lead Free Status / Rohs Status: Details

Electrical Characteristics at Ta=25°C
Switching Time Test Circuit
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
--4.0
--3.5
--3.0
--2.5
--2.0
--1.5
--1.0
--0.5
--2.5V
P.G
0
0V
0
PW=10μs
D.C.≤1%
V IN
--0.1 --0.2
Parameter
Drain-to-Source Voltage, V DS -- V
V IN
--0.3
50Ω
G
--0.4
I D -- V DS
V DD = --6V
D
--0.5
S
I D = --1.5A
R L =4Ω
--0.6
MCH3383
V (BR)DSS
I DSS
I GSS
V GS (off)
| yfs |
R DS (on)1
R DS (on)2
R DS (on)3
R DS (on)4
Ciss
Coss
Crss
t d (on)
t r
t d (off)
t f
Qg
Qgs
Qgd
V SD
Symbol
--0.7 --0.8
V OUT
--0.9
I D =--1mA, V GS =0V
V DS =--12V, V GS =0V
V GS =±4V, V DS =0V
V DS =--6V, I D =--1mA
V DS =--6V, I D =--1.5A
I D =--1.5A, V GS =--2.5V
I D =--0.7A, V GS =--1.8V
I D =--0.3A, V GS =--1.2V
I D =--50mA, V GS =--0.9V
V DS =--6V, f=1MHz
V DS =--6V, f=1MHz
V DS =--6V, f=1MHz
See specifi ed Test Circuit.
See specifi ed Test Circuit.
See specifi ed Test Circuit.
See specifi ed Test Circuit.
V DS =--6V, V GS =--2.5V, I D =--3.5A
V DS =--6V, V GS =--2.5V, I D =--3.5A
V DS =--6V, V GS =--2.5V, I D =--3.5A
I S =--3.5A, V GS =0V
IT16289
--1.0
MCH3383
Conditions
--4
--3
--2
--1
0
0
--0.2
--0.4
Gate-to-Source Voltage, V GS -- V
--0.6
min
--0.3
--0.8
I D -- V GS
--12
--1.0
Ratings
typ
--0.83
1010
--1.2 --1.4
130
109
115
250
5.3
9.9
6.2
1.6
1.1
57
75
85
49
65
max
--0.8
--1.2
--1.6 --1.8
V DS = --10V
--10
±10
173
500
69
98
No.9000-2/4
IT16290
Unit
mΩ
mΩ
mΩ
mΩ
μA
μA
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
S
V
V
V
--2.0