NTMD5838NLR2G ON Semiconductor, NTMD5838NLR2G Datasheet - Page 4

• Manufacturer Part Number: NTMD5838NLR2G
• Description: MOSFET N-CH 40V 8.9A 8SOIC
• Manufacturer: ON Semiconductor
• Series: -r

Specifications of NTMD5838NLR2G

• Fet Type: 2 N-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 25 mOhm @ 7A, 10V
• Drain To Source Voltage (vdss): 40V
• Current - Continuous Drain (id) @ 25° C: 7.4A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 17nC @ 10V
• Input Capacitance (ciss) @ Vds: 785pF @ 20V
• Power - Max: 2.1W
• Mounting Type: *
• Package / Case: *
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

0.001
1200
1000
1000
0.01
800
600
400
200
100
100
0.1
10
10
0
1
1
0.1
0
1
V
SINGLE PULSE
T
V
I
V
C
D
Figure 11. Maximum Rated Forward Biased
C
GS
DS
GS
rss
= 7 A
= 25°C
t
d(off)
= 20 V
= 4.5 V
= 10 V
V
V
Figure 9. Resistive Switching Time
DS
t
DS
r
t
Figure 7. Capacitance Variation
f
Variation vs. Gate Resistance
, DRAIN−TO−SOURCE VOLTAGE (V)
, DRAIN−TO−SOURCE VOLTAGE (V)
10
R
G
C
R
THERMAL LIMIT
PACKAGE LIMIT
Safe Operating Area
, GATE RESISTANCE (W)
oss
DS(on)
1
LIMIT
20
10
C
iss
TYPICAL PERFORMANCE CURVES
10
30
T
V
J
GS
= 25°C
http://onsemi.com
= 0 V
t
d(on)
10 ms
100 ms
10 ms
1 ms
dc
100
100
40
4
12
10
6
4
2
0
8
6
4
2
0
20
15
10
0.2
0
5
0
25
Figure 10. Diode Forward Voltage vs. Current
V
T
Drain−To−Source Voltage vs. Total Charge
J
GS
1
Figure 12. Maximum Avalanche Energy vs.
= 25°C
Q
T
= 0 V
GS
V
J
, STARTING JUNCTION TEMPERATURE (°C)
SD
2
Figure 8. Gate−To−Source and
, SOURCE−TO−DRAIN VOLTAGE (V)
Q
Starting Junction Temperature
50
0.4
G
, TOTAL GATE CHARGE (nC)
3
4
75
Q
Q
T
GD
0.6
5
6
100
7
0.8
V
I
T
D
J
GS
8
= 7 A
= 25°C
I
125
D
= 10 V
= 20 A
9
10
1
150