ADG779BKS-REEL7 Analog Devices Inc, ADG779BKS-REEL7 Datasheet - Page 3

• Manufacturer Part Number: ADG779BKS-REEL7
• Description: IC SWITCH SPDT SC70-6
• Manufacturer: Analog Devices Inc

Specifications of ADG779BKS-REEL7

• Rohs Status: RoHS non-compliant
• Function: Switch
• Circuit: 1 x SPDT
• On-state Resistance: 5 Ohm
• Voltage Supply Source: Single Supply
• Voltage - Supply, Single/dual (±): 1.8 V ~ 5.5 V
• Current - Supply: 0.001µA
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Surface Mount
• Package / Case: 6-TSSOP, SC-88, SOT-363
• Other names: ADG779BKS-REEL7; ADG779BKS-REEL7TR

SPECIFICATIONS
V
Table 1.
Parameter
ANALOG SWITCH
LEAKAGE CURRENTS
DIGITAL INPUTS
DYNAMIC CHARACTERISTICS
POWER REQUIREMENTS
1
2
Temperature range is B Version, −40°C to +85°C.
Guaranteed by design, not subject to production test.
DD
Analog Signal Range
On Resistance (R
On-Resistance Match Between Channels (ΔR
On-Resistance Flatness (R
Source Off Leakage I
Channel On Leakage I
Input High Voltage, V
Input Low Voltage, V
Input Current
t
t
Break-Before-Make Time Delay, t
Off Isolation
Channel-to-Channel Crosstalk
Bandwidth –3 dB
C
C
I
DD
ON
OFF
S
D
= 5 V ± 10%, GND = 0 V
, C
I
(Off )
INL
S
or I
(On)
INH
ON
2
)
INL
S
INH
(Off )
D
, I
S
FLAT (ON)
(On)
2
1
)
D
ON
)
25°C
2.5
5
0.1
0.75
±0.01
±0.01
0.005
14
3
8
−67
−87
−62
−82
200
7
27
0.001
Rev. A | Page 3 of 12
B Version
−40°C to
+85°C
0 V to V
6
0.8
1.2
±0.05
±0.05
2.4
0.8
±0.1
20
6
1
1.0
DD
Unit
V
Ω typ
Ω max
Ω typ
Ω max
Ω typ
Ω max
nA typ
nA typ
V min
V max
μA typ
μA max
ns typ
ns max
ns typ
ns max
ns typ
ns min
dB typ
dB typ
dB typ
dB typ
MHz typ
pF typ
pF typ
μA typ
μA max
Test Conditions/Comments
V
V
V
V
V
V
V
R
V
R
V
R
V
R
R
R
R
R
f = 1 MHz
f = 1 MHz
V
Digital Inputs = 0 V or 5 V
S
S
S
DD
S
S
IN
L
S
L
S
L
S1
L
L
L
L
L
DD
= 300 Ω, C
= 300 Ω, C
= 300 Ω, C
= 50 Ω, C
= 50 Ω, C
= 50 Ω, C
= 50 Ω, C
= 50 Ω, C
= 0 V to V
= 0 V to V
= 0 V to V
= 4.5 V/1 V, V
= V
= 3 V, see Figure 15
= 3 V, see Figure 15
= V
= V
= 5.5 V
= 5.5 V
D
INL
S2
= 1 V, or V
= 3 V, see Figure 16
or V
L
L
L
L
L
DD
DD
DD
INH
L
L
L
= 5 pF, f = 10 MHz
= 5 pF, f = 1 MHz, see Figure 17
= 5 pF, f = 10 MHz
= 5 pF, f = 1 MHz, see Figure 18
= 5 pF, see Figure 19
, I
, I
, I
= 35 pF
= 35 pF
= 35 pF
D
S
S
S
= −10 mA, see Figure 12
= −10 mA
= −10 mA
= 1 V/4.5 V, see Figure 13
S
= V
D
= 4.5 V, see Figure 14
ADG779