PH1214-40M M/A-Com Technology Solutions, PH1214-40M Datasheet

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PH1214-40M

Manufacturer Part Number
PH1214-40M
Description
Trans GP BJT NPN 70V 2-Pin Hermetic Metal
Manufacturer
M/A-Com Technology Solutions
Type
NPNr
Datasheet
1.PH1214-40M.pdf (3 pages)

Specifications of PH1214-40M

Maximum Collector Emitter Voltage
70 V
Maximum Emitter Base Voltage
3 V

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Company:
Bonase Electronics (HK) Co., Limited Bonase Electronics (HK) Co., Limited
Part Number:
PH1214-40M
Manufacturer:
M/A-COM
Quantity:
5 000
Company:
BOSTOCK HK LIMITED BOSTOCK HK LIMITED
Part Number:
PH1214-40M
Manufacturer:
MA-COM
Quantity:
3
1
Features
• NPN silicon microwave power transistors
• Common base configuration
• Broadband Class C operation
• High efficiency inter-digitized geometry
• Diffused emitter ballasting resistors
• Gold metallization system
• Internal input and output impedance matching
• Hermetic metal/ceramic package
• RoHS compliant
ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions
is considering for development. Performance is based on target specifications, simulated results,
and/or prototype measurements. Commitment to develop is not guaranteed.
PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology
Solutions has under development. Performance is based on engineering tests. Specifications are
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available.
Commitment to produce in volume is not guaranteed.
Electrical Specifications: T
PH1214-40M
Absolute Maximum Ratings at 25°C
Radar Pulsed Power Transistor
40W, 1.2-1.4 GHz, 150µs Pulse, 10% Duty
Collector-Emitter Breakdown Voltage I
Collector-Emitter Leakage Current
Thermal Resistance
Output Power
Power Gain
Collector Efficiency
Input Return Loss
Load Mismatch Tolerance
Load Mismatch Stability
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (Peak)
Power Dissipation @ +25°C
Storage Temperature
Junction Temperature
Parameter
Parameter
Symbol
V
V
P
T
T
CES
EBO
I
TOT
STG
C
J
V
Vcc = 40V, Pout = 40W
Vcc = 40V, Pout = 40W
Vcc = 40V, Pout = 40W
Vcc = 40V, Pout = 40W
Vcc = 40V, Pout = 40W
Vcc = 40V, Pout = 40W
Vcc = 40V, Pout = 40W
C
CE
= 15mA
C
Test Conditions
= 40V
= 25 ± 5°C (
-65 to +200
Rating
100
3.0
3.0
200
70
Room Ambient
Units
°C
°C
W
V
V
A
F = 1.2, 1.3, 1.4 GHz
F = 1.2, 1.3, 1.4 GHz
F = 1.2, 1.3, 1.4 GHz
F = 1.2, 1.3, 1.4 GHz
F = 1.2, 1.3, 1.4 GHz
F = 1.2, 1.3, 1.4 GHz
F = 1.2, 1.3, 1.4 GHz
M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make
changes to the product(s) or information contained herein without notice.
Frequency
• North America Tel: 800.366.2266 / Fax: 978.366.2266
• Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300
• Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298
Visit www.macomtech.com for additional data sheets and product information.
Outline Drawing
)
Symbol
VSWR-T
VSWR-S
R
BV
I
TH(JC)
P
RL
G
η
CES
CES
IN
C
P
M/A-COM Products
Released, 30 May 07
Min
8.5
70
50
-
-
-
-
-
-
Max
5.65
1.5:1
2.0
1.7
3:1
-6
-
-
-
Units
°C/W
mA
dB
dB
W
%
V
-
-

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PH1214-40M Summary of contents

Page 1

... PH1214-40M Radar Pulsed Power Transistor 40W, 1.2-1.4 GHz, 150µs Pulse, 10% Duty Features • NPN silicon microwave power transistors • Common base configuration • Broadband Class C operation • High efficiency inter-digitized geometry • Diffused emitter ballasting resistors • Gold metallization system • ...

Page 2

... PH1214-40M Radar Pulsed Power Transistor 40W, 1.2-1.4 GHz, 150µs Pulse, 10% Duty Typical RF Performance Freq. Pin Pout (GHz) (W) (W) 1.2 3.48 40 1.3 3.75 40 1.4 4.04 40 Gain vs. Frequency 11.0 10.5 10.0 9.5 9.0 1.20 1.25 1.30 Fre q (GHz) RF Test Fixture Impedance F (GHz) Z (Ω ...

Page 3

... PH1214-40M Radar Pulsed Power Transistor 40W, 1.2-1.4 GHz, 150µs Pulse, 10% Duty Test Fixture Circuit Dimensions Test Fixture Assembly 3 ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions is considering for development. Performance is based on target specifications, simulated results, and/or prototype measurements. Commitment to develop is not guaranteed. ...

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