SI1012X-T1 Vishay, SI1012X-T1 Datasheet - Page 5

• Manufacturer Part Number: SI1012X-T1
• Description: MOSFET Small Signal 20V 0.6A
• Manufacturer: Vishay

Specifications of SI1012X-T1

• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.85 Ohms
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: +/- 6 V
• Continuous Drain Current: 500 mA
• Power Dissipation: 250 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SC-89
• Minimum Operating Temperature: - 55 C
• Lead Free Status / Rohs Status: No

TYPICAL CHARACTERISTICS (T
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?71166.
Document Number: 71166
S10-2432-Rev. D, 25-Oct-10
0.01
0.01
0.1
0.1
2
1
2
1
10
10
- 4
- 4
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
Normalized Thermal Transient Impedance, Junction-to-Ambient (SC-75A)
10
Single Pulse
- 3
Single Pulse
Normalized Thermal Transient Impedance, Junction-to-Foot
10
- 3
A
= 25 °C, unless otherwise noted)
10
- 2
Square Wave Pulse Duration (s)
Square Wave Pulse Duration (s)
10
- 2
10
- 1
10
1
- 1
1
Notes:
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
0
P
DM
JM
- T
t
1
A
1
= P
Vishay Siliconix
t
2
DM
Z
thJA
Si1012R/X
thJA
100
t
t
1
2
(t)
= 833 ° C/W
www.vishay.com
6
0
1
0
0
5