SI4830DY-T1 Vishay, SI4830DY-T1 Datasheet - Page 5

• Manufacturer Part Number: SI4830DY-T1
• Description: MOSFET Small Signal 30V 7.5A 2W
• Manufacturer: Vishay

Specifications of SI4830DY-T1

• Configuration: Dual Dual Drain
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.022 Ohms
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 7.5 A
• Power Dissipation: 1.1 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SO-8
• Minimum Operating Temperature: - 55 C
• Lead Free Status / Rohs Status: No

Document Number: 71161
S-31989—Rev. C, 13-Oct-03
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
0.0001
0.001
0.01
0.1
0.01
200
160
120
20
10
0.1
80
40
1
0
2
1
0
0
10
Reverse Current vs. Junction Temperature
-4
Single Pulse
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
25
V
6
DS
30 V
- Drain-to-Source Voltage (V)
50
T
C
J
oss
- Temperature (_C)
Capacitance
12
10
75
-3
24 V
Normalized Thermal Transient Impedance, Junction-to-Foot
18
100
24
125
Square Wave Pulse Duration (sec)
10
150
30
-2
10
-1
10
1
0.0
0.3
T
J
V
= 150_C
Forward Voltage Drop
F
- Forward Voltage Drop (V)
1
0.6
Vishay Siliconix
T
J
= 25_C
0.9
Si4830DY
SCHOTTKY
1.2
www.vishay.com
MOSFET
10
1.5
5