SI6963DQ-T1 Vishay, SI6963DQ-T1 Datasheet - Page 3

• Manufacturer Part Number: SI6963DQ-T1
• Description: MOSFET Small Signal 20V 3.5A 1W
• Manufacturer: Vishay

Specifications of SI6963DQ-T1

• Configuration: Dual Dual Source
• Transistor Polarity: P-Channel
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: +/- 12 V
• Continuous Drain Current: 3 A
• Power Dissipation: 830 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: TSSOP-8
• Minimum Operating Temperature: - 55 C
• Lead Free Status / Rohs Status: No

Document Number: 71812
S-20220—Rev. D, 01-Apr-02
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
0.20
0.16
0.12
0.08
0.04
0.00
30
10
6
5
4
3
2
1
0
1
0.0
0
0
V
I
D
DS
Source-Drain Diode Forward Voltage
0.2
= 3.5 A
V
On-Resistance vs. Drain Current
= 10 V
GS
6
3
V
= 2.5 V
SD
Q
0.4
g
T
- Source-to-Drain Voltage (V)
I
J
D
- Total Gate Charge (nC)
= 150_C
- Drain Current (A)
Gate Charge
12
6
0.6
0.8
18
9
T
1.0
V
J
GS
= 25_C
= 4.5 V
24
12
1.2
1.4
30
15
New Product
2000
1600
1200
0.20
0.16
0.12
0.08
0.04
0.00
800
400
1.6
1.4
1.2
1.0
0.8
0.6
0
- 50
0
0
C
On-Resistance vs. Gate-to-Source Voltage
On-Resistance vs. Junction Temperature
rss
V
I
D
- 25
GS
= 3.5 A
= 4.5 V
4
T
V
V
2
0
C
J
GS
DS
oss
- Junction Temperature (_C)
C
- Gate-to-Source Voltage (V)
iss
- Drain-to-Source Voltage (V)
25
Capacitance
8
I
D
Vishay Siliconix
50
= 3.5 A
4
12
75
Si6963DQ
100
6
www.vishay.com
16
125
150
20
8
3