SI1031R-T1 Vishay, SI1031R-T1 Datasheet - Page 4

• Manufacturer Part Number: SI1031R-T1
• Description: MOSFET Small Signal 20V 0.15A
• Manufacturer: Vishay

Specifications of SI1031R-T1

• Configuration: Single
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 8 Ohms
• Drain-source Breakdown Voltage: - 20 V
• Gate-source Breakdown Voltage: +/- 6 V
• Continuous Drain Current: - 150 mA
• Power Dissipation: 280 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SC-75A
• Minimum Operating Temperature: - 55 C
• Lead Free Status / Rohs Status: No

Si1031R/X
Vishay Siliconix
www.vishay.com
4
TYPICAL CHARACTERISTICS (T
-0.0
-0.1
-0.2
-0.3
0.3
0.2
0.1
0.01
-50
0.1
Threshold Voltage Variance vs. Temperature
2
1
10
- 4
-25
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
0
T
Normalized Thermal Transient Impedance, Junction-to-Ambient (SC-75A, Si1031R Only)
J
- Temperature (_C)
10
25
Single Pulse
- 3
I
D
50
= 0.25 mA
-1
-2
-3
-4
-5
-6
-7
0
75
-50
10
A
- 2
100
= 25_C UNLESS NOTED)
-25
Square Wave Pulse Duration (sec)
125
BV
New Product
0
T
GSS
J
- Temperature (_C)
10
vs. Temperature
25
- 1
50
75
1
3.0
2.5
2.0
1.5
1.0
0.5
0.0
100
-50
125
-25
V
GS
= 2.8 V
10
Notes:
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
I
P
GSS
0
T
DM
JM
J
- Temperature (_C)
vs. Temperature
- T
t
25
1
A
= P
t
2
DM
Z
50
thJA
thJA
100
S-31507—Rev. B, 14-Jul-03
t
t
Document Number: 71171
1
2
(t)
=500_C/W
75
100
600
125