SI6459DQ-T1 Vishay, SI6459DQ-T1 Datasheet
SI6459DQ-T1
Specifications of SI6459DQ-T1
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SI6459DQ-T1 Summary of contents
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... For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm Document Number: 70186 S-99446—Rev. D, 29-Nov-99 I (A) D 2.6 2 P-Channel MOSFET Symbol Symbol R thJA Si6459DQ Vishay Siliconix * Source Pins and 7 must be tied common. Limit Unit – 2.6 2 –1.25 1 1.0 –55 to 150 C stg Limit Unit 83 C/W www.vishay.com FaxBack 408-970-5600 2-1 ...
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... Si6459DQ Vishay Siliconix Parameter Symbol Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current Zero Gate Voltage Drain Current a On-State Drain Current a a Drain Source On State Resistance Drain-Source On-State Resistance a Forward Transconductance a Diode Forward Voltage b Dynamic Total Gate Charge ...
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... Document Number: 70186 S-99446—Rev. D, 29-Nov- 1400 1200 1000 800 600 400 200 On-Resistance vs. Junction Temperature 1.85 1.60 1.35 1.10 0.85 0. –50 Si6459DQ Vishay Siliconix Transfer Characteristics T = – 125 – Gate-to-Source Voltage (V) GS Capacitance C iss C oss C rss – Drain-to-Source Voltage ( 2 –25 ...
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... Si6459DQ Vishay Siliconix Source-Drain Diode Forward Voltage 150 0.00 0.25 0.50 0.75 1.00 V – Source-to-Drain Voltage (V) SD Threshold Voltage 0.75 0. 250 A D 0.25 0.00 –0.25 –50 – 100 T – Temperature ( C) J Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Duty Cycle = 0.5 0.2 ...
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... Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’ ...