SST39SF040-70-4C-WH Microchip Technology, SST39SF040-70-4C-WH Datasheet

SST39SF040-70-4C-WH

Manufacturer Part Number

SST39SF040-70-4C-WH

Description

Flash 512K X 8 70ns

Manufacturer

Microchip Technology

Datasheet

1.SST39SF020A-70-4C-NHE.pdf (25 pages)

Specifications of SST39SF040-70-4C-WH

Data Bus Width

8 bit

Memory Type

NOR

Memory Size

4 Mbit

Architecture

Sectored

Interface Type

Parallel

Access Time

70 ns

Supply Voltage (max)

5.5 V

Supply Voltage (min)

4.5 V

Maximum Operating Current

25 mA

Operating Temperature

+ 70 C

Mounting Style

SMD/SMT

Package / Case

TSOP-32

Organization

512 KB x 8

Lead Free Status / Rohs Status

No RoHS Version Available

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

SST39SF040-70-4C-WH

Manufacturer:

SST

Quantity:

5 530

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

SST39SF040-70-4C-WH

Manufacturer:

SST

Quantity:

6 250

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

SST39SF040-70-4C-WH

Manufacturer:

SST

Quantity:

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

SST39SF040-70-4C-WHE

Manufacturer:

SST

Quantity:

1 040

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

SST39SF040-70-4C-WHE

Manufacturer:

SST

Quantity:

5 530

Company:

BOSTOCK HK LIMITED

Part Number:

SST39SF040-70-4C-WHE

Manufacturer:

Company:

Allchip Electronic(HK) Limited

Part Number:

SST39SF040-70-4C-WHE

Manufacturer:

SST

Quantity:

18 985

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FEATURES:

• Organized as 128K x8 / 256K x8 / 512K x8

• Single 4.5-5.5V Read and Write Operations

• Superior Reliability

• Low Power Consumption

• Sector-Erase Capability

• Fast Read Access Time:

• Latched Address and Data

• Automatic Write Timing

PRODUCT DESCRIPTION

The SST39SF010A/020A/040 are CMOS Multi-Purpose

Flash (MPF) manufactured with SST’s proprietary, high

performance CMOS SuperFlash technology. The split-gate

cell design and thick oxide tunneling injector attain better

reliability and manufacturability compared with alternate

approaches. The SST39SF010A/020A/040 devices write

(Program or Erase) with a 4.5-5.5V power supply. The

SST39SF010A/020A/040 devices conform to JEDEC stan-

dard pinouts for x8 memories.

Featuring

SST39SF010A/020A/040 devices provide a maximum

Byte-Program time of 20 µsec. These devices use Toggle

Bit or Data# Polling to indicate the completion of Program

operation. To protect against inadvertent write, they have

on-chip hardware and Software Data Protection schemes.

Designed, manufactured, and tested for a wide spectrum of

applications, these devices are offered with a guaranteed

typical endurance of 100,000 cycles. Data retention is rated

at greater than 100 years.

The SST39SF010A/020A/040 devices are suited for appli-

cations that require convenient and economical updating of

program, configuration, or data memory. For all system

applications, they significantly improve performance and

reliability, while lowering power consumption. They inher-

ently use less energy during erase and program than alter-

native flash technologies. The total energy consumed is a

S71147-09-000

– Endurance: 100,000 Cycles (typical)

– Greater than 100 years Data Retention

(typical values at 14 MHz)

– Active Current: 10 mA (typical)

– Standby Current: 30 µA (typical)

– Uniform 4 KByte sectors

– 55 ns

– 70 ns

– Internal V

1 Mbit / 2 Mbit / 4 Mbit (x8) Multi-Purpose Flash

high

Generation

SST39SF010A / 020A / 0405.0V 1Mb / 2Mb / 4Mb (x8) MPF memories

performance

01/10

SST39SF010A / SST39SF020A / SST39SF040

Byte-Program,

the

The SST logo and SuperFlash are registered trademarks of Silicon Storage Technology, Inc.

• Fast Erase and Byte-Program

• End-of-Write Detection

• TTL I/O Compatibility

• JEDEC Standard

• Packages Available

• All devices are RoHS compliant

• All non-Pb (lead-free) devices are RoHS compliant

function of the applied voltage, current, and time of applica-

tion. Since for any given voltage range, the SuperFlash

technology uses less current to program and has a shorter

erase time, the total energy consumed during any Erase or

Program operation is less than alternative flash technolo-

gies. These devices also improve flexibility while lowering

the cost for program, data, and configuration storage appli-

cations.

The SuperFlash technology provides fixed Erase and Pro-

gram times, independent of the number of Erase/Program

cycles that have occurred. Therefore the system software

or hardware does not have to be modified or de-rated as is

necessary with alternative flash technologies, whose Erase

and Program times increase with accumulated Erase/Pro-

gram cycles.

To meet high density, surface mount requirements, the

SST39SF010A/020A/040 are offered in 32-lead PLCC and

32-lead TSOP packages. A 600 mil, 32-pin PDIP is also

available. See Figures 2, 3, and 4 for pin assignments.

– Sector-Erase Time: 18 ms (typical)

– Chip-Erase Time: 70 ms (typical)

– Byte-Program Time: 14 µs (typical)

– Chip Rewrite Time:

– Toggle Bit

– Data# Polling

– Flash EEPROM Pinouts and command sets

– 32-lead PLCC

– 32-lead TSOP (8mm x 14mm)

– 32-pin PDIP

2 seconds (typical) for SST39SF010A

4 seconds (typical) for SST39SF020A

8 seconds (typical) for SST39SF040

These specifications are subject to change without notice.

MPF is a trademark of Silicon Storage Technology, Inc.

Data Sheet

Related parts for SST39SF040-70-4C-WH

SST39SF040-70-4C-WH Summary of contents

Page 1

... Chip-Erase Time (typical) – Byte-Program Time: 14 µs (typical) – Chip Rewrite Time: 2 seconds (typical) for SST39SF010A 4 seconds (typical) for SST39SF020A 8 seconds (typical) for SST39SF040 • End-of-Write Detection – Toggle Bit – Data# Polling • TTL I/O Compatibility • JEDEC Standard – ...

Page 2

... WE# pulse, while the command (30H) ©2010 Silicon Storage Technology, Inc. 1 Mbit / 2 Mbit / 4 Mbit Multi-Purpose Flash SST39SF010A / SST39SF020A / SST39SF040 is latched on the rising edge of the sixth WE# pulse. The internal Erase operation begins after the sixth WE# pulse. The End-of-Erase can be determined using either Data# Polling or Toggle Bit methods ...

Page 3

... Mbit / 2 Mbit / 4 Mbit Multi-Purpose Flash SST39SF010A / SST39SF020A / SST39SF040 Data# Polling ( When the SST39SF010A/020A/040 are in the internal Pro- gram operation, any attempt to read DQ complement of the true data. Once the Program operation is completed, DQ will produce true data. Note that even 7 though DQ may have valid data immediately following the ...

Page 4

... Address Buffers & Latches CE# OE# WE# FIGURE 1: Functional Block Diagram SST39SF040 SST39SF020A DQ0 DQ0 FIGURE 2: Pin Assignments for 32-lead PLCC ©2010 Silicon Storage Technology, Inc. 1 Mbit / 2 Mbit / 4 Mbit Multi-Purpose Flash SST39SF010A / SST39SF020A / SST39SF040 X-Decoder Control Logic SST39SF010A 32-lead PLCC Top View 10 24 ...

Page 5

... Mbit / 2 Mbit / 4 Mbit Multi-Purpose Flash SST39SF010A / SST39SF020A / SST39SF040 SST39SF040 SST39SF020A SST39SF010A A11 A11 A11 A13 A13 A13 A14 A14 A14 A17 A17 NC WE# WE# WE A18 NC NC A16 A16 A16 A15 A15 A15 A12 A12 A12 FIGURE 3: Pin Assignments for 32-lead TSOP (8mm x 14mm) ...

Page 6

... TABLE 3: Operation Modes Selection Mode Read Program Erase Standby Write Inhibit Product Identification Software Mode 1. X can but no other value ©2010 Silicon Storage Technology, Inc. 1 Mbit / 2 Mbit / 4 Mbit Multi-Purpose Flash SST39SF010A / SST39SF020A / SST39SF040 -A address lines will select the sector for SST39SF040 18 CE# OE# WE ...

Page 7

... SST39SF010A Device ID = B5H, is read with A SST39SF020A Device ID = B6H, is read with A SST39SF040 Device ID = B7H, is read with A 6. Both Software ID Exit operations are equivalent Absolute Maximum Stress Ratings (Applied conditions greater than those listed under “Absolute Maximum Stress Ratings” may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these conditions or conditions greater than those defined in the operational sections of this data sheet is not implied ...

Page 8

... This parameter is measured only for initial qualification and after a design or process change that could affect this parameter endurance rating is qualified as a 10,000 cycle minimum for the whole device. A sector- or block-level rating would result in a END higher minimum specification. ©2010 Silicon Storage Technology, Inc. 1 Mbit / 2 Mbit / 4 Mbit Multi-Purpose Flash SST39SF010A / SST39SF020A / SST39SF040 1 = 4.5-5.5V DD Limits Min Max ...

Page 9

... Mbit / 2 Mbit / 4 Mbit Multi-Purpose Flash SST39SF010A / SST39SF020A / SST39SF040 AC CHARACTERISTICS TABLE 9: Read Cycle Timing Parameters V Symbol Parameter T Read Cycle Time RC T Chip Enable Access Time CE T Address Access Time AA T Output Enable Access Time CE# Low to Active Output CLZ 1 T OE# Low to Active Output ...

Page 10

... OE# CE 7-0 SW0 Note Most significant address for SST39SF010A FIGURE 6: WE# Controlled Program Cycle Timing Diagram ©2010 Silicon Storage Technology, Inc. 1 Mbit / 2 Mbit / 4 Mbit Multi-Purpose Flash SST39SF010A / SST39SF020A / SST39SF040 OLZ T T CLZ DATA VALID for SST39SF020A, and A for SST39SF040 17 18 INTERNAL PROGRAM OPERATION STARTS ...

Page 11

... Mbit / 2 Mbit / 4 Mbit Multi-Purpose Flash SST39SF010A / SST39SF020A / SST39SF040 5555 ADDRESS CPH AS OE# WE 7-0 SW0 Note Most significant address for SST39SF010A FIGURE 7: CE# Controlled Program Cycle Timing Diagram ADDRESS A MS-0 CE# OE# WE Note Most significant address for SST39SF010A FIGURE 8: Data# Polling Timing Diagram © ...

Page 12

... Table 10 Sector Address Most significant address for SST39SF010A FIGURE 10: WE# Controlled Sector-Erase Timing Diagram ©2010 Silicon Storage Technology, Inc. 1 Mbit / 2 Mbit / 4 Mbit Multi-Purpose Flash SST39SF010A / SST39SF020A / SST39SF040 OEH T OE Note for SST39SF020A, and SIX-BYTE CODE FOR SECTOR-ERASE 5555 5555 2AAA ...

Page 13

... Note: This device also supports CE# controlled Chip-Erase operation. The WE# and CE# signals are interchageable as long as minimum timings are met. (See Table 10 Sector Address Most significant address for SST39SF010A for SST39SF020A, and A 18 for SST39SF040 FIGURE 11: WE# Controlled Chip-Erase Timing Diagram Three-byte Sequence for Software ID Entry ...

Page 14

... THREE-BYTE SEQUENCE FOR SOFTWARE ID EXIT AND RESET 5555 2AAA ADDRESS A 14 7-0 CE# OE WE# SW0 FIGURE 13: Software ID Exit and Reset ©2010 Silicon Storage Technology, Inc. 1 Mbit / 2 Mbit / 4 Mbit Multi-Purpose Flash SST39SF010A / SST39SF020A / SST39SF040 5555 IDA T WHP SW1 SW2 14 1147 F10.0 S71147-09-000 01/10 ...

Page 15

... Mbit / 2 Mbit / 4 Mbit Multi-Purpose Flash SST39SF010A / SST39SF020A / SST39SF040 V IHT INPUT V ILT AC test inputs are driven at V (3.0V) for a logic “1” and V IHT and outputs are V (1.5V) and FIGURE 14: AC Input/Output Reference Waveforms TO DUT FIGURE 15: A Test Load Example ©2010 Silicon Storage Technology, Inc. ...

Page 16

... Data Sheet FIGURE 16: Byte-Program Algorithm ©2010 Silicon Storage Technology, Inc. 1 Mbit / 2 Mbit / 4 Mbit Multi-Purpose Flash SST39SF010A / SST39SF020A / SST39SF040 Start Load data: AAH Address: 5555H Load data: 55H Address: 2AAAH Load data: A0H Address: 5555H Load Byte Address/Byte Data Wait for end of ...

Page 17

... Mbit / 2 Mbit / 4 Mbit Multi-Purpose Flash SST39SF010A / SST39SF020A / SST39SF040 Internal Timer Byte Program/Erase Initiated Wait SCE Program/Erase Completed FIGURE 17: Wait Options ©2010 Silicon Storage Technology, Inc. Toggle Bit Byte Program/Erase Initiated Read byte Read same No byte No Does DQ 6 match? Yes Program/Erase Completed ...

Page 18

... Address: 5555H Wait T IDA Read Software ID FIGURE 18: Software Product Command Flowcharts ©2010 Silicon Storage Technology, Inc. 1 Mbit / 2 Mbit / 4 Mbit Multi-Purpose Flash SST39SF010A / SST39SF020A / SST39SF040 Software Product ID Exit & Reset Command Sequence Load data: AAH Load data: F0H Address: 5555H Address: XXH ...

Page 19

... Mbit / 2 Mbit / 4 Mbit Multi-Purpose Flash SST39SF010A / SST39SF020A / SST39SF040 Chip-Erase Command Sequence Load data: AAH Address: 5555H Load data: 55H Address: 2AAAH Load data: 80H Address: 5555H Load data: AAH Address: 5555H Load data: 55H Address: 2AAAH Load data: 10H Address: 5555H ...

Page 20

... Data Sheet PRODUCT ORDERING INFORMATION SST 39 SF 010A - XXXX - XX ©2010 Silicon Storage Technology, Inc. 1 Mbit / 2 Mbit / 4 Mbit Multi-Purpose Flash SST39SF010A / SST39SF020A / SST39SF040 - XXX X Environmental Attribute Package Modifier Package Type Temperature Range Minimum Endurance Read Access Speed Version Device Density Voltage Product Series ...

Page 21

... SST39SF020A-55-5I-WHE SST39SF020A-70-4I-NHE SST39SF020A-70-4I-WHE Valid combinations for SST39SF040 SST39SF040-55-4C-NHE SST39SF040-55-4C-WHE SST39SF040-70-4C-NHE SST39SF040-70-4C-WHE SST39SF040-55-4I-NHE SST39SF040-55-4I-WHE SST39SF040-70-4I-NHE SST39SF040-70-4I-WHE Note: Valid combinations are those products in mass production or will be in mass production. Consult your SST sales representative to confirm availability of valid combinations and to determine availability of new combinations. ...

Page 22

... Dimensions do not include mold flash. Maximum allowable mold flash is .008 inches. 4. Coplanarity: 4 mils. FIGURE 20: 32-lead Plastic Lead Chip Carrier (PLCC) SST Package Code: NH ©2010 Silicon Storage Technology, Inc. 1 Mbit / 2 Mbit / 4 Mbit Multi-Purpose Flash SST39SF010A / SST39SF020A / SST39SF040 SIDE VIEW .112 .106 .029 .040 .020 R. x 30˚ ...

Page 23

... Mbit / 2 Mbit / 4 Mbit Multi-Purpose Flash SST39SF010A / SST39SF020A / SST39SF040 Pin # 1 Identifier 12.50 12.30 0.70 0.50 14.20 13.80 Note: 1. Complies with JEDEC publication 95 MO-142 BA dimensions, although some dimensions may be more stringent. 2. All linear dimensions are in millimeters (max/min). 3. Coplanarity: 0 Maximum allowable mold flash is 0. the package ends, and 0.25 mm between leads. ...

Page 24

... All linear dimensions are in inches (max/min). 3. Dimensions do not include mold flash. Maximum allowable mold flash is .010 inches. FIGURE 22: 32-pin Plastic Dual In-line Pins (PDIP) SST Package Code: PH ©2010 Silicon Storage Technology, Inc. 1 Mbit / 2 Mbit / 4 Mbit Multi-Purpose Flash SST39SF010A / SST39SF020A / SST39SF040 1.655 1.645 .200 .170 .150 ...

Page 25

... Mbit / 2 Mbit / 4 Mbit Multi-Purpose Flash SST39SF010A / SST39SF020A / SST39SF040 TABLE 11: Revision History Number 02 • 2002 Data Book 03 • Changes to Table 5 on page 8 – Added footnote for MPF power usage and Typical conditions – Clarified the Test Conditions for Power Supply Current and Read parameters – ...

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