UPG2012TKE2 Renesas Electronics America, UPG2012TKE2 Datasheet - Page 3

• Manufacturer Part Number: UPG2012TKE2
• Manufacturer: Renesas Electronics America

Specifications of UPG2012TKE2

• Lead Free Status / Rohs Status: Supplier Unconfirmed

Document No. PG10219EJ02V0DS (2nd edition)
Date Published June 2004 CP(K)
Printed in Japan
DESCRIPTION
mobile phone and another L-band application.
surface mounting.
FEATURES
• Supply voltage
• Switch control voltage
• Low insertion loss
• High isolation
• High-density surface mounting : 6-pin lead-less minimold package (1.5 × 1.1 × 0.55 mm)
APPLICATIONS
• L-band digital cellular or cordless telephone
• PCS, W-LAN, WLL and Bluetooth
ORDERING INFORMATION
Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.
µ
PG2012TK-E2
Remark To order evaluation samples, contact your nearby sales office.
The
This device can operate frequency from 0.5 GHz to 2.5 GHz, having the low insertion loss and high isolation.
This device is housed in a 6-pin lead-less minimold package (1511). And this package is able to high-density
Part Number
The information in this document is subject to change without notice. Before using this document, please confirm that
this is the latest version.
Not all devices/types available in every country. Please check with local NEC Compound Semiconductor Devices
representative for availability and additional information.
µ
PG2012TK is a GaAs MMIC for L-band SPDT (Single Pole Double Throw) switch which were developed for
Part number for sample order:
6-pin lead-less minimold
(1511)
Package
: V
: V
: V
: L
: L
: ISL2 = 30 dB TYP. @ f = 2.5 GHz, V
: L
: ISL1 = 30 dB TYP. @ f = 0.5 to 2.0 GHz, V
value)
value)
TM
INS1
INS2
INS3
DD
cont (H)
cont (L)
etc.
The mark
= 2.7 to 3.0 V (2.8 V TYP.)
= 0.27 dB TYP. @ f = 0.5 to 1.0 GHz, V
= 0.30 dB TYP. @ f = 2.0 GHz, V
= 0.30 dB TYP. @ f = 2.5 GHz, V
L-BAND SPDT SWITCH
µ
Marking
= −0.2 to +0.2 V (0 V TYP.)
= 2.7 to 3.0 V (2.8 V TYP.)
PG2012TK
G3H
DATA SHEET
shows major revised points.
• Embossed tape 8 mm wide
• Pin 1, 6 face the perforation side of the tape
• Qty 5 kpcs/reel
GaAs INTEGRATED CIRCUIT
DD
DD
DD
= 2.8 V, V
= 2.8 V, V
= 2.8 V, V
Supplying Form
DD
DD

µ
= 2.8 V, V
NEC Compound Semiconductor Devices, Ltd. 2002, 2004
= 2.8 V, V
cont
PG2012TK
cont
cont
= 2.8 V/0 V (Reference
= 2.8 V/0 V
= 2.8 V/0 V (Reference
cont
cont
= 2.8 V/0 V
= 2.8 V/0 V