JANTX2N3441 MICROSEMI, JANTX2N3441 Datasheet
JANTX2N3441
Manufacturer Part Number
JANTX2N3441
Description
Manufacturer
MICROSEMI
Datasheet
1.JANTX2N3441.pdf
(2 pages)
Specifications of JANTX2N3441
Transistor Polarity
NPN
Number Of Elements
1
Collector-emitter Voltage
140V
Collector-base Voltage
160V
Emitter-base Voltage
7V
Collector Current (dc) (max)
3A
Dc Current Gain (min)
50
Power Dissipation
3W
Operating Temp Range
-55C to 125C
Operating Temperature Classification
Military
Mounting
Through Hole
Pin Count
2 +Tab
Package Type
TO-66
Lead Free Status / Rohs Status
Not Compliant
NPN POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/369
Devices
2N3441
MAXIMUM RATINGS
THERMAL CHARACTERISTICS
1)
2)
ELECTRICAL CHARACTERISTICS (T
OFF CHARACTERISTICS
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
Collector-Emitter Voltage
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Base Current
Collector Current
Total Power Dissipation
Operating & Storage Junction Temperature Range
Thermal Resistance, Junction-to-Case
Collector-Emitter Voltage
Collector-Emitter Breakdown Voltage
Collector-Emitter Breakdown Voltage
Collector-Base Cutoff Current
Emitter-Base Cutoff Current
I
I
I
V
V
C
C
C
Derate linearly @ 17.1 mW/
Derate linearly @ 143 mW/
CB
EB
= 100 mAdc
= 100 mAdc, R
= 100 mAdc, V
= 140 Vdc, V
= 7.0 Vdc
Characteristics
BE
BE
BE
Junction-to-Ambient
= 100
Ratings
= -1.5 Vdc
= -1.5 Vdc
Characteristics
@ T
@ T
0
0
C for T
C for T
A
C
= +25
= +25
C
A
> +25
> +25
0
0
C
C
(2)
(1)
0
C
0
C
C
= 25
0
C unless otherwise noted)
Symbol
Symbol
T
V
V
V
V
R
R
J
,
P
CBO
I
CEO
CER
EBO
I
T
B
C
T
JA
JC
stg
-65 to +200
Value
Max.
58.5
140
160
150
7.0
2.0
3.0
3.0
7.0
25
V
V
V
Symbol
(BR)
(BR)
(BR)
I
I
CEX
EBO
CEO
CER
CEX
TECHNICAL DATA
Units
0
0
Unit
Vdc
Vdc
Vdc
Vdc
Adc
Adc
C/W
C/W
0
W
W
C
Min.
140
150
160
TO-66* (TO-213AA)
*See Appendix A for
Package Outline
Qualified Level
Max.
1.0
1.0
JANTX
Page 1 of 2
mAdc
mAdc
Unit
Vdc
Vdc
Vdc
120101
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JANTX2N3441 Summary of contents
Page 1
NPN POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/369 Devices 2N3441 MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Base Current Collector Current Total Power Dissipation @ Operating & Storage Junction Temperature Range THERMAL ...
Page 2
ELECTRICAL CHARACTERISTICS (con’t) Characteristics (3) ON CHARACTERISTICS Forward-Current Transfer Ratio mAdc 4.0 Vdc 0.5 Adc 4.0 Vdc 1.0 Adc 4.0 Vdc C CE ...