IRF7413 International Rectifier, IRF7413 Datasheet - Page 2

• Manufacturer Part Number: IRF7413
• Manufacturer: International Rectifier
• Type: Power MOSFETr

Specifications of IRF7413

• Number Of Elements: 1
• Polarity: N
• Channel Mode: Enhancement
• Drain-source On-res: 0.011Ohm
• Drain-source On-volt: 30V
• Gate-source Voltage (max): ±20V
• Continuous Drain Current: 13A
• Power Dissipation: 2.5W
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 8
• Package Type: SOIC
• Lead Free Status / Rohs Status: Not Compliant


‚
Notes:
V
∆V
R
V
g
I
I
Q
Q
Q
R
t
t
t
t
C
C
C
I
I
V
t
Q
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Source-Drain Ratings and Characteristics
DSS
GSS
d(on)
r
d(off)
f
S
SM
rr
fs
(BR)DSS
GS(th)
SD
DS(on)
G
iss
oss
rss
g
gs
gd
rr
(BR)DSS
Symbol
Symbol
/∆T
Ω
J
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Parameter
Parameter
™
…
†
ƒ
„
I
SD
θ
≤
≤
Min.
Min
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
1.0
1.2
30
10
≤
0.034
1800
Typ.
Typ
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
680
240
–––
–––
–––
200
6.1
8.6
52
16
50
52
46
74
≤
0.011
0.018
Max.
Max
-100
–––
–––
–––
100
–––
–––
–––
–––
–––
–––
–––
110
300
3.0
9.2
3.7
3.1
1.0
12
25
79
23
58
Units
Units
≤
≤
V/°C
nC
nC
µA
nA
pF
ns
ns
Ω
V
V
S
A
V
V
Reference to 25°C, I
V
V
V
V
V
V
V
V
I
V
V
V
I
R
R
V
V
ƒ = 1.0MHz, See Fig. 5
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
T
di/dt = 100A/µs
D
D
J
J
GS
GS
GS
DS
DS
DS
DS
GS
GS
DS
GS
DD
GS
DS
G
G
= 7.3A
= 7.3A
= 25°C, I
= 25°C, I
= 6.2 Ω
= 2.0Ω, See Fig. 10
= V
= 10V, I
= 30V, V
= 24V, V
= 24V
= 25V
= 0V, I
= 10V, I
= 4.5V, I
= -20V
= 20V
= 10V, See Fig. 6 and 9
= 15V
= 0V
GS
, I
D
Conditions
Conditions
D
S
F
D
D
= 250µA
D
GS
GS
= 250µA
= 7.3A
= 3.7A
= 7.3A, V
= 7.3A
= 3.7A
e
= 0V
= 0V, T
D
f
f
= 1mA
J
GS
f
= 125°C
= 0V
f
e