TLP750 Toshiba, TLP750 Datasheet

TLP750

Manufacturer Part Number
TLP750
Description
Manufacturer
Toshiba
Datasheet

Specifications of TLP750

Input Type
DC
Output Type
DC
Output Device
Transistor With Base
Number Of Elements
1
Reverse Breakdown Voltage
5V
Forward Voltage
1.85V
Forward Current
25mA
Package Type
PDIP
Collector Current (dc) (max)
8mA
Isolation Voltage
5000Vrms
Power Dissipation
100mW
Current Transfer Ratio
30%
Pin Count
8
Mounting
Through Hole
Operating Temp Range
-55C to 100C
Operating Temperature Classification
Industrial
Lead Free Status / Rohs Status
Not Compliant

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Digital Logic Ground Isolation
Line Receiver
Microprocessor System Interfaces
Switching Power Supply Feedback Control
Analog Signal Isolation
The TOSHIBA TLP750 consists of GaAℓAs high−output light emitting
diode and a high speed detector of one chip photo diode−transistor.
This unit is 8−lead DIP.
TLP750 has no internal base connection, and is suitable for application in
noisy environmental conditions.
Switching speed: t
Switching speed: t
UL recognized: UL1577, file No. E67349
BSI approved: BS EN60065: 2002,
Isolation voltage: 5000V
Option(D4)type
VDE approved: DIN EN 60747-5-2,
Maximum operating insulation voltage: 890V
Highest permissible over voltage: 8000V
(Note)
Creepage distance: 6.4mm (min)
Clearance: 6.4mm (min)
Insulation thickness: 0.4mm (min)
When a EN 60747-5-2 approved type is needed,
please designate the “Option(D4)”
Certificate No.8869
BS EN60950-1: 2002,
Certificate No.8870
Certificate No. 40009302
pHL
pLH
=0.3μs (typ.)
=0.5μs (typ.) (R
rms
TOSHIBA Photocoupler GaAℓAs Ired + Photo IC
(min)
L
=1.9kΩ)
PK
TLP750
PK
1
Pin Configuration
Schematic
1
2
3
4
V
F
2
3
Weight: 0.54 g (typ.)
I
F
TOSHIBA
8
7
6
5
(top view)
1
2 : Anode
3
4
5
6
7
8
11−10C4
I
CC
: N.C.
: Cathode
: N.C.
: Emitter
: Collector
: N.C.
: Cathode
I
2007-10-01
O
8
6
5
TLP750
GND
V
V
Unit: mm
CC
O

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TLP750 Summary of contents

Page 1

... Analog Signal Isolation The TOSHIBA TLP750 consists of GaAℓAs high−output light emitting diode and a high speed detector of one chip photo diode−transistor. This unit is 8−lead DIP. TLP750 has no internal base connection, and is suitable for application in noisy environmental conditions. • Switching speed: t =0.3μ ...

Page 2

... Device considered a two terminal device: Pins and 4 shorted together and pins and 8 shorted together. (Ta = 25°C) Symbol (Note (Note FPT (Note (Note (Note 5) T opr T stg T sol (Note (Note 7) 2 TLP750 Rating Unit −0.5~15 V −0.5~15 V 100 mW −55~100 °C −55~125 °C 260 °C 5000 V rms 2007-10-01 ...

Page 3

... L =5V, ― 1.0 CC Rank 0: R =1.9kΩ ― 0.5 L =200V p−p ― 1500 =1.9kΩ) =200V p−p −1500 ― =1.9kΩ) 2007-10-01 TLP750 Max. Unit 1.85 V ― °C 10 μA ― pF 500 nA 5 μA 50 μA 1 μA ― ― % ― ― ...

Page 4

... Test Circuit 1: Switching Time Test Circuit I Pulse F 1 Input PW=100μs 2 Duty ratio=1/ Monitor F 4 Test Circuit 2: Common Mode Noise Immunity Test Circuit Pulse generator Z =50Ω 160 V 160 μ μ Output 5 Monitor V = Output V O Monitor (I F=0mA F=16mA) 4 TLP750 5V 1.5V 1. 200V 90 2007-10-01 ...

Page 5

... Forward current I F (mA 0.5 0.3 0.1 0.05 0.03 0.01 0.1 0.3 160 Forward current I F (mA) 1.2 1.0 0.8 0.6 0.4 0 -40 -20 Ambient temperature Ta (°C) 5 TLP750 ΔV /ΔTa – – 0 ℃ 100 300 I /I – Normalized to 16mA 4. 0. 25° ...

Page 6

... I – ℃ Output voltage V O ( – ℃ 0 Load resistance R (kΩ KΩ 100 6 TLP750 V – = Ta=25°C 3.9 kΩ 10 kΩ Forward current I F (mA) 2007-10-01 ...

Page 7

... Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product. Please use Product in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances, including without limitation, the EU RoHS Directive. TOSHIBA assumes no liability for damages or losses occurring as a result of noncompliance with applicable laws and regulations. 7 TLP750 2007-10-01 ...

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