BDP954E6327 Infineon Technologies, BDP954E6327 Datasheet

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PNP Silicon AF Power Transistors • For AF driver and output stages • High collector current • High current gain • Low collector-emitter saturation voltage • Complementary types: BDP947, BDP949 BDP953 (NPN) • Pb-free (RoHS compliant) package • Qualified according ...

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Maximum Ratings Parameter Collector-emitter voltage BDP948 BDP950 BDP954 Collector-base voltage BDP948 BDP950 BDP954 Emitter-base voltage Collector current ≤ Peak collector current Base current Peak base current Total power dissipation- ≤ 100 ° Junction temperature ...

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Electrical Characteristics at T Parameter DC Characteristics Collector-emitter breakdown voltage mA BDP948 mA BDP950 mA ...

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DC current gain 100 °C 25 °C -50 ° Base-emitter saturation voltage ...

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Collector cutoff current I CBO max Total power dissipation P 5.5 W 4.5 4 3.5 ...

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Permissible Pulse Load = ƒ totmax totDC 0.005 0.01 0.02 0.05 0.1 0.2 0.5 -2 ...

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Package Outline Foot Print Marking Layout (Example) Packing Reel ø180 mm = 1.000 Pieces/Reel Reel ø330 mm = 4.000 Pieces/Reel Pin 1 Package SOT223 6.5 ±0 ±0 2.3 0.7 ±0.1 4.6 0. ...

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... For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies failure of such components can reasonably be expected to cause the failure of that life-support device or system affect the safety or effectiveness of that device or system ...