CY7C106B-20VC Cypress Semiconductor Corp, CY7C106B-20VC Datasheet
CY7C106B-20VC
Specifications of CY7C106B-20VC
Available stocks
Related parts for CY7C106B-20VC
CY7C106B-20VC Summary of contents
Page 1
... I/O pins. The four input/output pins (I/O high-impedance state when the devices are deselected (CE HIGH), the outputs are disabled (OE HIGH), or during a write operation (CE and WE LOW). The CY7C106B is available in a standard 400-mil-wide SOJ; the CY7C1006B is available in a standard 300-mil-wide SOJ. I/O 3 I/O ...
Page 2
... V [1] DC Input Voltage .................................–0. Document #: 38-05037 Rev. ** Current into Outputs (LOW)......................................... 20 mA Static Discharge Voltage .......................................... >2001V (per MIL-STD-883, Method 3015) Latch-Up Current..................................................... >200 mA Operating Range .... –0.5V to +7.0V Range + 0.5V Commercial CC Industrial + 0.5V CC CY7C106B CY7C1006B Ambient [2] Temperature + 10% – +85 C Page [+] Feedback ...
Page 3
... GND CC OUT = Max mA, OUT = 1/t MAX > > < MAX , Com’l CC – 0.3V, CC > V – 0. < 0.3V CY7C106B CY7C1006B 7C106B-15 7C106B-20 7C1006B-15 7C1006B-20 Max. Min. Max. Min. Max. Unit 2.4 2.4 V 0.4 0.4 0 2 +0.3 +0.3 +0.3 0.8 –0.3 0.8 –0.3 ...
Page 4
... Tested initially and after any design or process changes that may affect these parameters. Document #: 38-05037 Rev. ** Test Conditions MHz 5. 480 3. GND 5 pF 255 Rise Time < 1V/ns (b) C106B–3 CY7C106B CY7C1006B Max. Unit ALL INPUT PULSES 90% 90% 10% 10% Fall Time < 1V/ns C106B–4 Page [+] Feedback ...
Page 5
... Min. Max. Min. Max. Min less than less than t , and t HZCE LZCE HZOE LZOE HZWE and t . HZWE SD CY7C106B CY7C1006B 7C106B-25 7C1006B-25 7C106B-35 Max. Min. Max. Min. Max. Unit less than t for any given device. LZWE ...
Page 6
... > V – 0.3V > V – 0. < 0.3V IN DATA RETENTION MODE 4.5V V > CDR OHA DOE DATA VALID 50 CY7C106B CY7C1006B [10] Min. Max. Unit 2.0 V 250 200 s 4. C106B–5 DATA VALID C106B–6 t HZOE t HZCE HIGH IMPEDANCE 50 C106B–7 Page [+] Feedback ...
Page 7
... DATA I/O t HZOE Notes: 14 goes HIGH simultaneously with WE going HIGH, the output remains in a high-impedance state. 15. Data I/O is high impedance Document #: 38-05037 Rev SCE PWE t SD DATA VALID [14, 15 SCE PWE t SD DATA VALID CY7C106B CY7C1006B C106B– C106B–9 Page [+] Feedback ...
Page 8
... High Data Out Data High Z Ordering Information Speed (ns) Ordering Code 12 CY7C106B-12VC CY7C1006B-12VC 15 CY7C106B-15VC CY7C1006B-15VC CY7C106B-15VI CY7C1006B-15VI 20 CY7C106B-20VC CY7C1006B-20VC CY7C106B-20VI CY7C1006B-20VI 25 CY7C106B-25VC CY7C1006B-25VC CY7C106B-25VI CY7C1006B-25VI 35 CY7C106B-35VC CY7C106B-35VI Document #: 38-05037 Rev. ** [9, 15 SCE PWE t SD DATA VALID Mode Power-Down Read Write Selected, Outputs Disabled ...
Page 9
... The inclusion of Cypress Semiconductor products in life-support systems application implies that the manufacturer assumes all risk of such use and in doing so indemnifies Cypress Semiconductor against all charges. 28-Lead (300-Mil) Molded SOJ V21 28-Lead (400-Mil) Molded SOJ V28 CY7C106B CY7C1006B 51-85031-B 51-85032-A ...
Page 10
... Document Title: CY7C106B, CY7C1006B 256K x 4 Static RAM Document Number: 38-05037 Issue Orig. of REV. ECN NO. Date Change ** 106831 09/17/01 SZV Document #: 38-05037 Rev. ** Description of Change Change from Spec number: 38-00955 to 38-05037 CY7C106B CY7C1006B Page [+] Feedback ...