CY7C1011CV33-15AI Cypress Semiconductor Corp, CY7C1011CV33-15AI Datasheet

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CY7C1011CV33-15AI

Manufacturer Part Number
CY7C1011CV33-15AI
Description
Manufacturer
Cypress Semiconductor Corp
Datasheet

Specifications of CY7C1011CV33-15AI

Density
2Mb
Access Time (max)
15ns
Sync/async
Asynchronous
Architecture
Not Required
Clock Freq (max)
Not RequiredMHz
Operating Supply Voltage (typ)
3.3V
Address Bus
17b
Package Type
TQFP
Operating Temp Range
-40C to 85C
Number Of Ports
1
Supply Current
90mA
Operating Supply Voltage (min)
3V
Operating Supply Voltage (max)
3.6V
Operating Temperature Classification
Industrial
Mounting
Surface Mount
Pin Count
44
Word Size
16b
Number Of Words
128K
Lead Free Status / Rohs Status
Not Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
CY7C1011CV33-15AI
Manufacturer:
CY
Quantity:
20 250
Features
Cypress Semiconductor Corporation
Document Number: 38-05232 Rev. *F
Temperature ranges
Pin and function compatible with CY7C1011BV33
High speed
Low active power
Data Retention at 2.0
Automatic power down when deselected
Independent control of upper and lower bits
Easy memory expansion with CE and OE features
Available in Pb-free and non Pb-free 44-pin TSOP II, 44-pin
TQFP and 48-Ball VFBGA packages
Logic Block Diagram
Commercial: 0°C to 70°C
Industrial: –40°C to 85°C
Automotive-A: –40°C to 85°C
t
360 mW (max)
AA
= 10 ns
A
A
A
A
A
A
A
A
A
0
1
2
3
4
5
6
7
8
198 Champion Court
COLUMN DECODER
INPUT BUFFER
RAM Array
128K x 16
Functional Description
The CY7C1011CV33 is a high performance CMOS static RAM
organized as 131,072 words by 16 bits. This device has an
automatic power down feature that significantly reduces power
consumption when deselected.
To write to the device, take Chip Enable (CE) and Write Enable
(WE) inputs LOW. If Byte Low Enable (BLE) is LOW, then data
from IO pins (IO
specified on the address pins (A
Enable (BHE) is LOW, then data from IO pins (IO
is written into the location specified on the address pins (A
through A
To read from the device, take Chip Enable (CE) and Output
Enable (OE) LOW while forcing the Write Enable (WE) HIGH. If
Byte Low Enable (BLE) is LOW, then data from the memory
location specified by the address pins appear on IO
Byte High Enable (BHE) is LOW, then data from memory
appears on IO
Table”
modes.
The input and output pins (IO
impedance state when the device is deselected (CE HIGH), the
outputs are disabled (OE HIGH), the BHE and BLE are disabled
(BHE, BLE HIGH), or during a write operation (CE LOW and WE
LOW).
For best practice recommendations, refer to the Cypress
application note
on page 9 for a complete description of Read and Write
2-Mbit (128K x 16) Static RAM
16
San Jose
).
8
AN1064, SRAM System
to IO
0
through IO
,
15
CA 95134-1709
IO
IO
. For more information, see the
0
8
–IO
–IO
BHE
WE
OE
BLE
CE
0
7
15
through IO
7
), is written into the location
0
through A
CY7C1011CV33
Revised January 04, 2008
15
Guidelines.
) are placed in a high
16
). If Byte High
8
408-943-2600
through IO
0
to IO
“Truth
7
15
. If
0
[+] Feedback
)

Related parts for CY7C1011CV33-15AI

CY7C1011CV33-15AI Summary of contents

Page 1

... Cypress Semiconductor Corporation Document Number: 38-05232 Rev. *F 2-Mbit (128K x 16) Static RAM Functional Description The CY7C1011CV33 is a high performance CMOS static RAM organized as 131,072 words by 16 bits. This device has an automatic power down feature that significantly reduces power consumption when deselected. ...

Page 2

... Pin Configuration Figure 1. 44-Pin TSOP Note 1. NC pins are not connected on the die. Document Number: 38-05232 Rev. *F [1] Figure 2. 48-Ball FBGA Pinout BLE OE BHE IO 8 BLE Figure 3. 44-Pin TQFP CY7C1011CV33 [ BHE Page [+] Feedback ...

Page 3

... Selection Guide Description Maximum Access Time Maximum Operating Current Maximum CMOS Standby Current Document Number: 38-05232 Rev. *F -10 10 Comm’l 90 Ind’l 100 Auto-A 100 Comm’l/Ind’l 10 Auto-A 10 CY7C1011CV33 -12 -15 Unit Page [+] Feedback ...

Page 4

... IN IL MAX Auto-A Max > V – 0.3V, Com’l/Ind’ > V – 0.3V Auto-A V < 0.3V CY7C1011CV33 Ambient V CC Temperature ( 3.3V ± 10% 0°C to +70°C –40°C to +85°C –40°C to +85°C -10 -12 -15 Min Max Min Max Min Max 2 ...

Page 5

... Still Air, soldered × 4.5 inch, four-layer printed circuit board Figure 4. AC Test Loads and Waveforms 12-, 15-ns devices: 50 Ω 30 pF* 1.5V (a) High-Z characteristics: 90% 10% (c) Fall Time: 1 V/ns Figure 4 Figure 4 (d). CY7C1011CV33 . Max Unit TSOP II TQFP FBGA 44.56 42.66 46.98 10.75 14.64 9 ...

Page 6

... The minimum write cycle time for Write Cycle No. 3 (WE controlled, OE LOW) is the sum of t Document Number: 38-05232 Rev. *F -10 Min Max values until the first memory access is performed less than less than t , and t LZCE HZOE LZOE HZWE “AC Test Loads and Waveforms” and t HZWE CY7C1011CV33 -12 -15 Min Max Min Max ...

Page 7

... Device is continuously selected. OE, CE, BHE, and/or BLE = V 11 HIGH for read cycle. 12. Address valid prior to or coincident with CE transition LOW. Document Number: 38-05232 Rev OHA DOE t LZOE DBE DATA VALID 50 CY7C1011CV33 [10, 11] DATA VALID [11, 12] t HZOE t HZCE t HZBE HIGH IMPEDANCE 50 Page [+] Feedback ...

Page 8

... ADDRESS t SA BHE, BLE WE CE DATA IO Notes 13. Data IO is high impedance if OE, BHE, and/or BLE = V 14 goes HIGH simultaneously with WE going HIGH, the output remains in a high impedance state. Document Number: 38-05232 Rev. *F [13, 14 SCE PWE PWE t SCE CY7C1011CV33 Page [+] Feedback ...

Page 9

... Read – Lower Bits Only High Z Data Out Read – Upper Bits Only Data In Data In Write – All Bits Data In High Z Write – Lower Bits Only High Z Data In Write – Upper Bits Only High Z High Z Selected, Outputs Disabled CY7C1011CV33 LZWE Power Standby ( Active ( Active (I ...

Page 10

... CY7C1011CV33-12ZC 51-85087 44-pin TSOP II CY7C1011CV33-12ZXC CY7C1011CV33-12ZI 51-85087 44-pin TSOP II CY7C1011CV33-12ZXI CY7C1011CV33-12AXI 51-85064 44-pin TQFP (Pb-Free) CY7C1011CV33-12BVI 51-85150 48-ball ( mm) VFBGA 15 CY7C1011CV33-15ZXC 51-85087 44-pin TSOP II (Pb-Free) The 44 pin TSOP II package containing the Automotive grade device is designated as “ZS”, while the same package containing the Commercial/Industrial grade device is “ ...

Page 11

... Package Diagrams Figure 10. 44-Pin Thin Small Outline Package Type II Document Number: 38-05232 Rev. *F CY7C1011CV33 51-85087-*A Page [+] Feedback ...

Page 12

... MOLD PROTRUSION/END FLASH SHALL NOT EXCEED 0.0098 in (0.25 mm) PER SIDE BODY LENGTH DIMENSIONS ARE MAX PLASTIC BODY SIZE INCLUDING MOLD MISMATCH 3. DIMENSIONS IN MILLIMETERS 1.40±0.05 A SEE DETAIL CY7C1011CV33 0° MIN. R. 0.08 MIN. 0.20 MAX. STAND-OFF 0.25 0.05 MIN. 0.15 MAX. ...

Page 13

... Package Diagrams (continued) TOP VIEW A1 CORNER 6.00±0.10 SEATING PLANE C Document Number: 38-05232 Rev. *F Figure 12. 48-Ball FBGA ( mm) A CY7C1011CV33 BOTTOM VIEW A1 CORNER Ø0. Ø0. Ø0.30±0.05(48X 1.875 0.75 3.75 B 6.00±0.10 0.15(4X) 51-85150-*D Page [+] Feedback ...

Page 14

... Document History Page Document Title: CY7C1011CV33, 2-Mbit (128K x 16) Static RAM Document Number: 38-05232 Issue Orig. of REV. ECN NO. Date Change ** 117132 07/31/02 HGK *A 118057 08/19/02 HGK *B 119702 10/11/02 DFP *C 386106 See ECN PCI *D 498501 See ECN NXR *E 522620 See ECN VKN ...

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