TLP621-2GBT Toshiba, TLP621-2GBT Datasheet - Page 3

• Manufacturer Part Number: TLP621-2GBT
• Manufacturer: Toshiba

Specifications of TLP621-2GBT

• Input Type: DC
• Output Type: DC
• Output Device: Transistor
• Number Of Elements: 2
• Reverse Breakdown Voltage: 5V
• Forward Voltage: 1.3V
• Forward Current: 50mA
• Collector-emitter Voltage: 55V
• Package Type: PDIP
• Collector Current (dc) (max): 50mA
• Isolation Voltage: 5000Vrms
• Power Dissipation: 150mW
• Collector-emitter Saturation Voltage: 0.4V
• Current Transfer Ratio: 600%
• Pin Count: 8
• Mounting: Through Hole
• Operating Temp Range: -25C to 85C
• Operating Temperature Classification: Commercial
• Lead Free Status / Rohs Status: Not Compliant

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•
Option (D4) type
VDE approved: DIN EN 60747-5-2, certificate no. 40009302
(Note)
Creepage distance
Clearance
Insulation thickness
Maximum operating insulation voltage: 890 V
Highest permissible over voltage: 8000 V
When a EN 60747-5-2 approved type is needed, please designate the “Option (D4)”
: 6.4 mm (min.)
: 6.4 mm (min.)
: 0.4 mm (min.)
7.62 mm pich
standard type
10.16 mm pich
(LF2) type
8.0 mm (min)
8.0 mm (min)
0.4 mm (min)
PK
PK
3
TLP621,TLP621−2,TLP621−4
2007-10-01