CY7C199-15DMB Cypress Semiconductor Corp, CY7C199-15DMB Datasheet - Page 5

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CY7C199-15DMB

Manufacturer Part Number
CY7C199-15DMB
Description
Manufacturer
Cypress Semiconductor Corp
Datasheet

Specifications of CY7C199-15DMB

Density
256Kb
Access Time (max)
15ns
Operating Supply Voltage (typ)
5V
Package Type
DIP
Operating Temp Range
-55C to 125C
Supply Current
180mA
Operating Supply Voltage (min)
4.5V
Operating Supply Voltage (max)
5.5V
Operating Temperature Classification
Military
Mounting
Through Hole
Pin Count
28
Word Size
8b
Lead Free Status / Rohs Status
Not Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
CY7C199-15DMB
Manufacturer:
MOT
Quantity:
550
Part Number:
CY7C199-15DMB
Manufacturer:
CYP
Quantity:
624
Switching Characteristics
READ CYCLE
t
t
t
t
t
t
t
t
t
t
t
WRITE CYCLE
t
t
t
t
t
t
t
t
t
t
Shaded area contains preliminary information.
Notes:
10. The internal write time of the memory is defined by the overlap of CE LOW and WE LOW. Both signals must be LOW to initiate a write and either signal can terminate
11. The minimum write cycle time for write cycle #3 (WE controlled, OE LOW) is the sum of t
RC
AA
OHA
ACE
DOE
LZOE
HZOE
LZCE
HZCE
PU
PD
WC
SCE
AW
HA
SA
PWE
SD
HD
HZWE
LZWE
7.
8.
9.
Parameter
Test conditions assume signal transition time of 3 ns or less for -12 and -15 speeds and 5 ns or less for -20 and slower speeds, timing reference levels of 1.5V,
input pulse levels of 0 to 3.0V, and output loading of the specified I
At any given temperature and voltage condition, t
t
a write by going HIGH. The data input set-up and hold timing should be referenced to the rising edge of the signal that terminates the write.
HZOE
, t
HZCE
, and t
[10, 11]
Read Cycle Time
Address to Data Valid
Data Hold from Address Change
CE LOW to Data Valid
OE LOW to Data Valid
OE LOW to Low Z
OE HIGH to High Z
CE LOW to Low Z
CE HIGH to High Z
CE LOW to Power-Up
CE HIGH to Power-Down
Write Cycle Time
CE LOW to Write End
Address Set-Up to Write End
Address Hold from Write End
Address Set-Up to Write Start
WE Pulse Width
Data Set-Up to Write End
Data Hold from Write End
WE LOW to High Z
WE HIGH to Low Z
HZWE
are specified with C
Description
Over the Operating Range
[8]
[8]
[9]
[8,9]
[8]
[8, 9]
L
= 5 pF as in part (b) of AC Test Loads. Transition is measured 500 mV from steady-state voltage.
HZCE
is less than t
Min.
LZCE
8
3
0
3
0
8
7
7
0
0
7
5
0
3
OL
7C199-8
/I
[3, 7]
OH
, t
HZOE
and 30-pF load capacitance.
Max.
5
4.5
8
8
5
4
8
5
is less than t
Min.
HZWE
10
10
7C199-10
3
0
3
0
7
7
0
0
7
5
0
3
LZOE
and t
, and t
SD
Max.
10
10
10
.
5
5
5
6
HZWE
is less than t
Min.
12
12
7C199-12
3
0
3
0
9
9
0
0
8
8
0
3
LZWE
Max.
12
12
12
5
5
5
7
for any given device.
Min.
15
15
10
10
7C199-15
3
0
3
0
0
0
9
9
0
3
Max.
CY7C199
15
15
15
7
7
7
7
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns

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