CY62127BVLL-55ZI Cypress Semiconductor Corp, CY62127BVLL-55ZI Datasheet

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CY62127BVLL-55ZI

Manufacturer Part Number
CY62127BVLL-55ZI
Description
Manufacturer
Cypress Semiconductor Corp
Datasheet

Specifications of CY62127BVLL-55ZI

Density
2.25Mb
Operating Supply Voltage (typ)
3V
Operating Temp Range
-40C to 85C
Supply Current
20mA
Operating Temperature Classification
Industrial
Word Size
16b
Lead Free Status / Rohs Status
Not Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
CY62127BVLL-55ZI
Manufacturer:
CYPRESS/赛普拉斯
Quantity:
20 000
Cypress Semiconductor Corporation
Document #: 38-05155 Rev. **
Features
Functional Description
The CY62127BV is a high-performance CMOS Static RAM
organized as 65,536 words by 16 bits. This device has an au-
tomatic power-down feature that significantly reduces power
consumption by 99% when deselected. The device enters
power-down mode when CE is HIGH or when CE is LOW and
both BLE and BHE are HIGH.
• 2.7V–3.6V operation
• CMOS for optimum speed/power
• Low active power (70 ns, LL version)
• Low standby power (70 ns, LL version)
• Automatic power-down when deselected
• Independent control of Upper and Lower Bytes
• Available in 44-pin TSOP II (forward) and fBGA
A
A
A
Logic Block Diagram
A
A
A
A
A
A
A
10
12
11
— 54 mW (max.) (15 mA)
— 54 W (max.) (15 A)
— Power down either with CE or BHE and BLE HIGH
6
3
2
1
0
9
7
COLUMN DECODER
DATA IN DRIVERS
1024 X 1024
RAM Array
64K x 16
3901 North First Street
I/O
I/O
Writing to the device is accomplished by taking Chip Enable
(CE) and Write Enable (WE) inputs LOW. If Byte Low Enable
(BLE) is LOW, then data from I/O pins (I/O
written into the location specified on the address pins (A
through A
from I/O pins (I/O
specified on the address pins (A
Reading from the device is accomplished by taking Chip
Enable (CE) and Output Enable (OE) LOW while forcing the
Write Enable (WE) HIGH. If Byte Low Enable (BLE) is LOW,
then data from the memory location specified by the address
pins will appear on I/O
LOW, then data from memory will appear on I/O
the truth table at the back of this data sheet for a complete
description of read and write modes.
The input/output pins (I/O
high-impedance state when the device is deselected (CE
HIGH), the outputs are disabled (OE HIGH), the BHE and BLE
are disabled (BHE, BLE HIGH), or during a write operation (CE
LOW, and WE LOW).
The CY62127BV is available in standard 44-pin TSOP Type II
(forward pinout) and fBGA packages.
1
9
–I/O
–I/O
BHE
WE
CE
OE
BLE
8
16
15
San Jose
). If Byte High Enable (BHE) is LOW, then data
9
through I/O
64K x 16 Static RAM
1
Pin Configurations
I/O
I/O
I/O
I/O
V
I/O
I/O
I/O
I/O
V
A
A
A
A
WE
NC
CE
to I/O
CC
A
A
A
A
A
SS
15
14
13
12
TSOP II (Forward)
4
3
2
1
0
1
2
3
4
5
6
7
8
1
CA 95134
through I/O
13
14
15
16
17
18
19
20
21
22
1
2
3
4
5
6
7
8
9
10
11
12
Top View
8
. If Byte High Enable (BHE) is
16
0
Revised September 6, 2001
) is written into the location
through A
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
CY62127BV
16
A
A
A
OE
BHE
BLE
I/O
I/O
I/O
I/O
V
V
I/O
I/O
I/O
I/O
NC
A
A
A
A
NC
5
6
7
SS
CC
8
9
10
11
) are placed in a
1
15
16
15
14
13
12
11
10
9
through I/O
).
408-943-2600
9
to I/O
16
. See
8
), is
0

Related parts for CY62127BVLL-55ZI

CY62127BVLL-55ZI Summary of contents

Page 1

... COLUMN DECODER Cypress Semiconductor Corporation Document #: 38-05155 Rev. ** Writing to the device is accomplished by taking Chip Enable (CE) and Write Enable (WE) inputs LOW. If Byte Low Enable (BLE) is LOW, then data from I/O pins (I/O written into the location specified on the address pins (A through Byte High Enable (BHE) is LOW, then data ...

Page 2

Pin Configurations (continued) Selection Guide Maximum Access Time Maximum Operating Current Maximum CMOS Standby Current Maximum Ratings (Above which the useful life may be impaired. For user guide- lines, not tested.) Storage Temperature ................................. – +150 C Ambient ...

Page 3

Electrical Characteristics Over the Operating Range Parameter Description V Output HIGH Voltage OH V Output LOW Voltage OL V Input HIGH Voltage IH V Input LOW Voltage IL I Input Load Current IX I Output Leakage Current ...

Page 4

Switching Characteristics Over the Operating Range Parameter READ CYCLE t Read Cycle Time RC t Address to Data Valid AA t Data Hold from Address Change OHA t CE LOW to Data Valid ACE t OE LOW to Data ...

Page 5

Data Retention Characteristics Parameter Description V V for Data Retention Data Retention Current CCDR [4] t Chip Deselect to Data Retention Time CDR t Operation Recovery Time R Data Retention Waveform Switching Waveforms [10, ...

Page 6

Switching Waveforms (continued) Read Cycle No. 2 (OE Controlled) ADDRESS CE OE BHE, BLE t LZBE HIGH IMPEDANCE DATA OUT t LZCE SUPPLY CURRENT Write Cycle No. 1 (CE Controlled) ADDRESS CE BHE, BLE WE DATA ...

Page 7

Switching Waveforms (continued) Write Cycle No. 2 (WE Controlled, OE HIGH During Write) ADDRESS BHE, BLE OE t HZOE DATA I/O NOTE 15 Write Cycle No.3 (WE Controlled, OE LOW) ADDRESS BHE, ...

Page 8

... Ordering Information Speed (ns) Ordering Code 55 CY62127BVLL-55ZI CY62127BVLL-55BAI 70 CY62127BVLL-70ZI CY62127BVLL-70BAI Document #: 38-05155 Rev. ** I/O –I/O I/O –I High Z High Z Data Out Data Out Data Out High Z High Z Data Out Data In Data In Data In High Z High Z Data In High Z High Z High Z High Z Package Name Z44 ...

Page 9

Package Diagrams Document #: 38-05155 Rev. ** 48-Ball (7. 7.00 mm) FBGA BA48A CY62127BV 51-85096-*D Page ...

Page 10

... Document #: 38-05155 Rev. ** © Cypress Semiconductor Corporation, 2001. The information contained herein is subject to change without notice. Cypress Semiconductor Corporation assumes no responsibility for the use of any circuitry other than circuitry embodied in a Cypress Semiconductor product. Nor does it convey or imply any license under patent or other rights. Cypress Semiconductor does not authorize its products for use as critical components in life-support systems where a malfunction or failure may reasonably be expected to result in significant injury to the user ...

Page 11

Document Title: CY62127BV 64K x 16 Static RAM Document Number: 38-05155 Issue REV. ECN NO. Date ** 109899 01/10/02 Document #: 38-05155 Rev. ** Orig. of Change SZV Change from Spec number: 38-01018 to 38-05155 CY62127BV Description of Change Page ...

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