BFQ34 NXP Semiconductors, BFQ34 Datasheet - Page 3

• Manufacturer Part Number: BFQ34
• Manufacturer: NXP Semiconductors

Specifications of BFQ34

• Transistor Polarity: NPN
• Number Of Elements: 1
• Collector-emitter Voltage: 18V
• Collector-base Voltage: 25V
• Emitter-base Voltage: 2V
• Collector Current (dc) (max): 150mA
• Dc Current Gain (min): 25
• Power Dissipation: 2.7W
• Frequency (max): 4GHz
• Operating Temp Range: -65C to 200C
• Operating Temperature Classification: Military
• Mounting: Screw
• Pin Count: 4
• Lead Free Status / Rohs Status: Not Compliant

Philips Semiconductors
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 134).
THERMAL RESISTANCE
September 1995
V
V
V
I
P
T
T
R
SYMBOL
C
stg
j
CBO
CEO
EBO
tot
th j-c
NPN 4 GHz wideband transistor
SYMBOL
collector-base voltage
collector-emitter voltage
emitter-base voltage
DC collector current
total power dissipation
storage temperature
junction temperature
thermal resistance from junction to case
PARAMETER
PARAMETER
open emitter
open base
open collector
up to T
3
c
= 160 C
CONDITIONS
THERMAL RESISTANCE
15 K/W
MIN.
Product specification
65
25
18
2
150
2.7
150
200
MAX. UNIT
BFQ34
V
V
V
mA
W
C
C