LH28F320BFN-PTTLZJ Sharp Electronics, LH28F320BFN-PTTLZJ Datasheet - Page 4

• Manufacturer Part Number: LH28F320BFN-PTTLZJ
• Manufacturer: Sharp Electronics

Specifications of LH28F320BFN-PTTLZJ

• Cell Type: NOR
• Density: 32Mb
• Access Time (max): 70ns
• Interface Type: Parallel
• Boot Type: Top
• Address Bus: 21b
• Operating Supply Voltage (typ): 3.3V
• Operating Temp Range: 0C to 70C
• Package Type: SOP
• Program/erase Volt (typ): 2.7 to 3.6V
• Sync/async: Asynchronous
• Operating Temperature Classification: Commercial
• Operating Supply Voltage (min): 2.7V
• Operating Supply Voltage (max): 3.6V
• Word Size: 16b
• Number Of Words: 2M
• Supply Current: 25mA
• Mounting: Surface Mount
• Pin Count: 44
• Lead Free Status / Rohs Status: Not Compliant

sharp
The product, which is Page Mode Flash memory, is a low power, high density, low cost, nonvolatile read/write storage
solution for a wide range of applications. The product can operate at V
greatly extends battery life for portable applications.
The product provides high performance asynchronous page mode. It allows code execution directly from Flash, thus
eliminating time consuming wait states.
The memory array block architecture utilizes Enhanced Data Protection features, and provides separate Parameter and Main
Blocks that provide maximum flexibility for safe nonvolatile code and data storage.
Fast program capability is provided through the use of high speed Page Buffer Program.
Special OTP (One Time Program) block provides an area to store permanent code such as a unique number.
* ETOX is a trademark of Intel Corporation.
• 70/25ns 8-Word Page Mode
• 2.7V Read and Write Operations
• Automatic Power Savings Mode Reduces I
• 5µs Typical Erase/Program Suspends
• 4-Word Factory-Programmed Area
• 4-Word User-Programmable Area
• 16-Word Page Buffer
• Eight 4K-word Parameter Blocks
• Sixty-three 32K-word Main Blocks
• Top Parameter Location
High Performance Reads
Low Power Operation
Enhanced Code + Data Storage
OTP (One Time Program) Block
High Performance Program with Page Buffer
Operating Temperature 0°C to +70°C
Flexible Blocking Architecture
CMOS Process (P-type silicon substrate)
32M density with 16Bit I/O Interface
in Static Mode
Page Mode Flash MEMORY
LH28F320BFN-PTTLZJ
32Mbit (2Mbit×16)
CCR
LHF32FDH
• Individual Block Lock and Block Lock-Down with
• All blocks are locked at power-up or device reset.
• Block Erase, Full Chip Erase, (Page Buffer) Word
• 3.0V Low-Power 11µs/Word (Typ.)
• Basic Command Set
• Common Flash Interface (CFI)
• Minimum 100,000 Block Erase Cycles
Enhanced Data Protection Features
Automated Erase/Program Algorithms
Cross-Compatible Command Support
Extended Cycling Capability
44-Lead SOP
ETOX
Not designed or rated as radiation hardened
Zero-Latency
Program Lockout during Power Transitions
Programming
CC
=2.7V-3.6V. Its low voltage operation capability
TM*
Flash Technology
Rev. 2.41
2