LH28F800BGE-TL85 Sharp Electronics, LH28F800BGE-TL85 Datasheet - Page 14

• Manufacturer Part Number: LH28F800BGE-TL85
• Manufacturer: Sharp Electronics

Specifications of LH28F800BGE-TL85

• Cell Type: NOR
• Density: 8Mb
• Interface Type: Parallel
• Boot Type: Top
• Address Bus: 19b
• Operating Supply Voltage (typ): 3.3/5V
• Operating Temp Range: 0C to 70C
• Package Type: TSOP-I
• Program/erase Volt (typ): 2.7/3.3/5/12V
• Sync/async: Asynchronous
• Operating Temperature Classification: Commercial
• Operating Supply Voltage (min): 2.7/4.5V
• Operating Supply Voltage (max): 3.6/5.5V
• Word Size: 16b
• Number Of Words: 512K
• Supply Current: 65mA
• Mounting: Surface Mount
• Pin Count: 48
• Lead Free Status / Rohs Status: Not Compliant

The only other valid commands while block erase is
suspended are Read Status Register and Block
Erase Resume. After a Block Erase Resume
command is written to the flash memory, the WSM
will continue the block erase process. Status
register bits SR.6 and SR.7 will automatically clear
and RY/BY# will return to V
Resume
automatically outputs status register data when
read (see Fig. 5). V
(the same V
block erase is suspended. RP# must also remain at
V
erase). WP# must also remain at V
same WP# level used for block erase). Block erase
cannot resume until word write operations initiated
during block erase suspend have completed.
4.8 Word Write Suspend Command
The Word Write Suspend command allows word
write interruption to read data in other flash memory
locations. Once the word write process starts,
writing the Word Write Suspend command requests
that the WSM suspend the word write sequence at
a predetermined point in the algorithm. The device
continues to output status register data when read
after the Word Write Suspend command is written.
Polling status register bits SR.7 and SR.2 can
determine when the word write operation has been
suspended (both will be set to "1"). RY/BY# will
also transition to V
the word write suspend latency.
At this point, a Read Array command can be
written to read data from locations other than that
which is suspended. The only other valid
commands while word write is suspended are Read
Status Register and Word Write Resume. After
Word Write Resume command is written to the
flash memory, the WSM will continue the word
write process. Status register bits SR.2 and SR.7
will automatically clear and RY/BY# will return to
V
IH
OL
. After the Word Write Resume command is
or V
HH
command
(the same RP# level used for block
PP
level used for block erase) while
OH
PP
. Specification t
is
must remain at V
written,
OL
. After the Erase
WHRH1
IL
the
or V
PPH1/2/3
defines
device
IH
(the
- 14 -
written, the device automatically outputs status
register data when read (see Fig. 6). V
remain at V
word write) while in word write suspend mode. RP#
must also remain at V
level used for word write). WP# must also remain
at V
write).
4.9 Block Locking
This Boot Block flash memory architecture features
two hardware-lockable boot blocks so that the
kernel code for the system can be kept secure
while other blocks are programmed or erased as
necessary.
4.9.1 V
The V
complete write protection of all blocks in the flash
device.
4.9.2 WP# = V
The lockable blocks are locked when WP# = V
any program or erase operation to a locked block
will result in an error, which will be reflected in the
status register. For top configuration, the top two
boot blocks are lockable. For the bottom
configuration, the bottom two boot blocks are
lockable. Unlocked blocks can be programmed or
erased normally (Unless V
4.9.3 BLOCK UNLOCKING
WP# = V
blocks.
These blocks can now be programmed or erased.
WP# or RP# controls all block locking and V
provides protection against spurious writes. Table 5
defines the write protection methods.
LH28F800BG-L/BGH-L (FOR TSOP, CSP)
IL
PP
or V
PP
programming voltage can be held low for
IH
IH
= V
PPH1/2/3
or RP# = V
(the same WP# level used for word
IL
IL
FOR COMPLETE PROTECTION
FOR BLOCK LOCKING
(the same V
IH
PP
HH
or V
is below V
unlocks all lockable
HH
PP
(the same RP#
level used for
PPLK
PP
).
must
PP
IL
;