LH28F400SUE-NC80 Sharp Electronics, LH28F400SUE-NC80 Datasheet
LH28F400SUE-NC80
Specifications of LH28F400SUE-NC80
Related parts for LH28F400SUE-NC80
LH28F400SUE-NC80 Summary of contents
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... Each Block (Lock Block and Protect Set/Reset) • 5 µA (Typ CMOS Standby CC • 0.2 µA (Typ.) Deep Power-Down • State-of-the-Art 0.45 µm ETOX™ Flash Technology • 56-Pin, 1.2 mm × × TSOP (Type I) Package • 48-Pin, 1.2 mm × × TSOP (Type I) Package • ...
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... LH28F400SU-NC 48-PIN TSOP RY/ Figure 2. 48-Pin TSOP Configuration 2 4M (512K × 8, 256K × 16) Flash Memory TOP VIEW 44-PIN SOP RP/BY BYTE 47 46 GND GND GND Figure 3. 44-Pin SOP Configuration 0 28F400SUT-NC60-24 TOP VIEW BYTE 32 GND 28F400SUT-NC60-23 ...
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... Flash Memory OUTPUT BUFFER OUTPUT MULTIPLEXER INPUT -1,0 17 BUFFER Y-DECODER ADDRESS X-DECODER QUEUE LATCHES ADDRESS COUNTER Figure 4. LH28F400SU-NC Block Diagram OUTPUT INPUT BUFFER BUFFER DATA ID QUEUE REGISTER REGISTERS CSR REGISTER ESRs DATA COMPARATOR Y GATING/SENSING . . . . . . LH28F400SU-NC INPUT BUFFER ...
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... WSM operation(s) are terminated, » is high and float. Address then becomes the lowest order address (512K × 8, 256K × 16) Flash Memory » is » » pin is floated. selects between the high -1 -1 ...
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... V systems. Its x8/x16 architecture allows the optimization of memory to processor interface. The flexible block locking option enables bundling of execut- able application software in a Resident Flash Array or memory card. Manufactured on Sharp’s 0.45 µm ETOX™ process technology, the LH28F400SU-NC is the most cost-effective, high-density 5.0 V flash memory. ...
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... CE transitions high and RP stays high with all input control pins at CMOS levels. In this mode, the device draws an I standby current of 10 µ (512K × 8, 256K × 16) Flash Memory MEMORY MAP 7FFFFH 16KB BLOCK 7C000H 7BFFFH 16KB BLOCK 78000H 77FFFH ...
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... Flash Memory BUS OPERATIONS, COMMANDS AND STATUS REGISTER DEFINITIONS Bus Operations for Word-Wide Mode (BY MODE RP » CE » Read Output Disable Standby Deep Power-Down Manufacturer Device Write Bus Operations for Byte-Wide Mode (BY » » MODE RP CE Read Output Disable ...
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... A 1 WDL looks at the WDH. In word-wide (x16) mode Second bus cycle address of Protect Set/Confirm and Protect Reset/Confirm command is 0FFH. Specifically A others are don’t care (512K × 8, 256K × 16) Flash Memory FIRST BUS CYCLE OPER. ADDRESS DATA Write X FFH ...
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... Flash Memory Compatible Status Register WSMS ESS CSR.7 = WRITE STATE MACHINE STATUS (WSMS Ready 0 = Busy CSR.6 = ERASE-SUSPEND STATUS (ESS Erase Suspended 0 = Erase in Progress/Completed CSR.5 = ERASE STATUS (ES Error in Block Erasure 0 = Successful Block Erase CSR.4 = DATA-WRITE STATUS (DWS Error in Data Write 0 = Data Write Successful CSR ...
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... DATA WRITE CSR. SUCCESSFUL LOW PP CSR.3 = DETECT 0 CLEAR CSRD RETRY/ERROR RECOVERY Figure 6. Word/Byte Writes with Compatible Status Register 10 4M (512K × 8, 256K × 16) Flash Memory BUS COMMAND OPERATION Write Word/Byte D = 40H or 10H Write Write Read Q = CSRD Toggle update CSRD Standby Check CSR ...
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... Flash Memory START WRITE 20H WRITE D0H AND BLOCK ADDRESS READ COMPATIBLE STATUS REGISTER NO 0 SUSPEND CSR.7 = ERASE 1 CSR FULL STATUS CHECK IF DESIRED OPERATION COMPLETE CSR FULL STATUS CHECK PROCEDURE READ CSRD (see above) 0 ERASE CSR. SUCCESSFUL ...
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... READ ARRAY DATA DONE NO READING? YES WRITE D0H WRITE FFH ERASE RESUMED READ ARRAY DATA Figure 8. Erase Suspend to Read Array with Compatible Status Register 12 4M (512K × 8, 256K × 16) Flash Memory BUS COMMAND OPERATION Write Erase D = B0H Suspend Read Q = CSRD Toggle update CSRD ...
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... Flash Memory START READ COMPATIBLE STATUS REGISTER 0 CSR RESET WP READ COMPATIBLE STATUS REGISTER 0 CSR WRITE 77H WRITE D0H AND BLOCK ADDRESS READ COMPATIBLE STATUS REGISTER 0 CSR (NOTE) 1 CSR. LOCK YES ANOTHER BLOCK? NO SET WP OPERATION COMPLETE BUS COMMAND ...
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... Use Set-Write-Protect flowchart. This step re-implements protection to locked blocks. 4. Use Word/Byte-Write or 2-Byte-Write flowchart sequences to write data. 5. Use Block-Lock flowchart to write lock bit if desired. Figure 10. Updating Data in a Locked Block 14 4M (512K × 8, 256K × 16) Flash Memory START RESET WP (NOTE 1) WRITE MORE ...
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... Flash Memory START READ COMPATIBLE STATUS REGISTER 0 CSR WRITE FBH WRITE DATA/A -1 WRITE DATA/ADDRESS READ COMPATIBLE STATUS REGISTER 0 CSR (NOTE) 1 CSR. ANOTHER YES 2-BYTE WRITE NO OPERATION COMPLETE Figure 11. Two-Byte Serial Writes with Compatible Status Registers (LH28F400SU) (Apply to LH28F400SU, x16/x8, 48TSOP/56TSOP/44SOP) ...
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... Single Block Erase to erase all of the unlocked blocks in sequence. 3. Set WP command is issued, if necessary. If CSR.3 (VPPS) is set to '0', after clearing CSR.3/4/5, 1. Retry Erase All Unlocked Block Erase command. 4M (512K × 8, 256K × 16) Flash Memory COMMAND COMMENTS Erase All D = A7H ...
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... Flash Memory START READ COMPATIBLE STATUS REGISTER 0 CSR WRITE 57H WRITE CONFIRM DATA/ADDRESS READ COMPATIBLE STATUS REGISTER 0 CSR (NOTE) 1 CSR. OPERATION COMPLETE BUS COMMAND OPERATION Read Write Set Write Protect Set Confirm Write Read Read NOTE: If CSR. set command sequence error, should be cleared before further attempts are initiated ...
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... WRITE 47H WRITE CONFIRM DATA/ADDRESS READ COMPATIBLE STATUS REGISTER 0 CSR (NOTE) 1 CSR. OPERATION COMPLETE 18 4M (512K × 8, 256K × 16) Flash Memory BUS COMMAND OPERATION Read Write Reset Write Protect Write Reset Confirm Read Read NOTE: If CSR. set command sequence error, should be cleared before further attempts are initiated. ...
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... Flash Memory ELECTRICAL SPECIFICATIONS Absolute Maximum Ratings* Temperature under bias ......................... 0°C to +80°C Storage temperature ......................... -65°C to +125° 5.0 V ± 0.5 V Systems CC SYMBOL PARAMETER T Operating Temperature, Commercial with Respect to GND Supply Voltage with Respect to GND PP PP Voltage on any Pin (Except V ...
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... Figure 17. Transient Equivalent Testing Load Circuit (V 1.5 OUTPUT FROM OUTPUT UNDER TEST 28F400SUT-NC60-14 Figure 18. Transient Equivalent Testing Load Circuit (V 4M (512K × 8, 256K × 16) Flash Memory 2 TRANSMISSION LINE TOTAL CAPACITANCE = 100 pF 28F400SUT-NC60-15 = 5.0 V ±0 2 TRANSMISSION LINE TOTAL CAPACITANCE = 30 pF 28F400SUT-NC60-16 = 5.0 V ± ...
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... Flash Memory DC Characteristics V = 5.0 V ± 0 0°C to +70° SYMBOL PARAMETER I Input Load Current IL I Output Leakage Current Standby Current CCS CC V Deep Power-Down CC I CCD Current Read Current CCR Read Current CCR Write Current CCW Block Erase Current ...
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... 0 0.0 5.5 V 5.0 4.5 5 25°C. These currents are valid for all less than Static operation. CCR (512K × 8, 256K × 16) Flash Memory TEST CONDITIONS NOTE V > Word/Byte PP PPH Write in Progress PPH Block Erase in Progress PPH Block Erase Suspended ...
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... Flash Memory AC Characteristics - Read Only Operations V = 5.0 V ± 0 0°C to +70° SYMBOL PARAMETER t Read Cycle Time AVAV t Address Setup to OE » Going Low AVGL t Address to Output Delay AVQV » Output Delay ELQV » High to Output Delay PHQV » ...
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... STANDBY V IH ADDRESSES ( ( ( ( HIGH-Z OH DATA (D/ 5 GND ( (512K × 8, 256K × 16) Flash Memory DEVICE AND ADDRESS SELECTION OUTPUTS ENABLED ADDRESSES STABLE t AVAV t AVGL t GLQV t ELQV t GLQX t ELQX t AVQV t PHQV Figure 19. Read Timing Waveforms V CC DATA VALID STANDBY . . . POWER-DOWN . . . . . . t EHQZ . . . t GHQZ . . . ...
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... Flash Memory V IH ADDRESSES ( ( ( BYTE ( HIGH-Z OH DATA ( HIGH-Z OH DATA ( ADDRESSES STABLE t AVAV t FLEL t AVGL t AVQV t GLQV t ELQV t GLQX t ELQX DATA OUTPUT t AVQV t FLQZ DATA OUTPUT Figure 20. BY » » Timing Waveforms LH28F400SU- EHQZ . . . ...
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... The power supply may start to switch concurrently with RP recommended operating voltage. » 2. The address access time and RP high to data valid time are shown for 5 Characteristics Read Only Operations also (512K × 8, 256K × 16) Flash Memory 4 PL5V » Power-Up and RP Reset Waveforms CC MIN ...
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... Flash Memory AC Characteristics for WE » - Controlled Command Write Operations V = 5.0 V ± 0 0°C to +70° SYMBO- PARAMETER L t Write Cycle Time AVAV t V Set Going High VPWH PP » » Setup to CE Going Low PHEL » ...
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... ADDRESS AND DATA AUTOMATED DATA-WRITE (DATA-WRITE ERASE ERASE CONFIRM COMMAND DELAY AVWH t WHAX (NOTE AVWH WHAX t t WHWL WHQV WHDX t DVWH WHRL t VPWH 4M (512K × 8, 256K × 16) Flash Memory READ COMPATIBLE STATUS REGISTER DATA t WHGL t GHWL OUT IN t RHPL (NOTE 4) t QVVL 28F400SUT-NC60-20 ...
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... Flash Memory AC Characteristics for CE » - Controlled Command Write Operations V = 5.0 V ± 0 0°C to +70° SYMBOL PARAMETER t Write Cycle Time AVAV » Setup to WE Going Low PHWL » Set Going High VPEH PP » Setup to CE ...
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... ADDRESS AND DATA AUTOMATED (DATA-WRITE) OR DATA-WRITE ERASE CONFIRM OR ERASE COMMAND DELAY AVEH t EHAX (NOTE AVEH EHAX t t EHEL EHQV EHDX t DVEH EHRL t VPEH 4M (512K × 8, 256K × 16) Flash Memory READ COMPATIBLE STATUS REGISTER DATA t EHGL t GHEL OUT IN t RHPL (NOTE 4) t QVVL 28F400SUT-NC60-21 ...
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... Flash Memory Erase and Byte Write Performance V = 5.0 V ± 0 0°C to +70° SYMBOL PARAMETER 1 t Byte Write Time WHRH 2 Two-Byte Serial Write Time t WHRH 3 t Word Write Time WHRH 4 t 16KB Block Write Time WHRH 5 t 16KB Block Write Time ...
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... MAXIMUM LIMIT DIMENSIONS IN MM [INCHES] MINIMUM LIMIT 32 4M (512K × 8, 256K × 16) Flash Memory 56 0.50 [0.020] TYP. 0.28 [0.011] 0.12 [0.005] 29 0.13 [0.005] 0.49 [0.019] 0.39 [0.015] ...
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... Flash Memory 48TSOP (TSOP048-P-1218) 0.50 [0.020] 0.30 [0.012] TYP. 0.10 [0.004 12.20 [0.480] 11.80 [0.465] MAXIMUM LIMIT DIMENSIONS IN MM [INCHES] MINIMUM LIMIT 25 16.60 [0.654] 18.40 [0.724] 16.20 [0.638] 17.60 [0.693] 24 0.15 [0.006] 1.10 [0.043] 0.425 [0.017] 0.90 [0.035] 1 ...
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... MAXIMUM LIMIT DIMENSIONS IN MM [INCHES] MINIMUM LIMIT ORDERING INFORMATION LH28F400SU X -NC## Device Type Package Speed Example: LH28F400SUT-NC60 (4M (512K x 8, 256K x 16) Flash Memory, 60 ns, 56-pin TSOP (512K × 8, 256K × 16) Flash Memory 23 13.40 [0.528] 16.40 [0.646] 13.00 [0.512] 15.60 [0.614] SEE 22 DETAIL 0 ...
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... Telex: 49608472 (SHARPCAM) Facsimile: (360) 834-8903 http://www.sharpmeg.com ©1997 by SHARP Corporation Issued July 1996 4M (512K × 8, 256K × 16) Flash Memory EUROPE SHARP Electronics (Europe) GmbH Microelectronics Division Sonninstraße 3 20097 Hamburg, Germany Phone: (49) 40 2376-2286 Telex: 2161867 (HEEG D) Facsimile: (49) 40 2376-2232 ...