TLP181GB Toshiba, TLP181GB Datasheet - Page 6

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TLP181GB

Manufacturer Part Number
TLP181GB
Description
Manufacturer
Toshiba
Datasheet

Specifications of TLP181GB

Input Type
DC
Output Type
DC
Output Device
Transistor
Number Of Elements
1
Reverse Breakdown Voltage
5V
Forward Voltage
1.3V
Forward Current
50mA
Collector-emitter Voltage
80V
Package Type
MFSOP
Collector Current (dc) (max)
50mA
Isolation Voltage
3750Vrms
Power Dissipation
200mW
Collector-emitter Saturation Voltage
0.4V
Current Transfer Ratio
600%
Pin Count
4
Mounting
Surface Mount
Operating Temp Range
-25C to 85C
Operating Temperature Classification
Commercial
Lead Free Status / Rohs Status
Not Compliant

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3000
1000
−3.2
−2.8
−2.4
−2.0
−1.6
−1.2
−0.8
−0.4
100
500
300
100
80
60
40
20
50
30
10
−20
0.1
0
3
10
0
− 3
0.3 0.5
Ambient temperature Ta (°C)
Forward current I
20
3
Duty cycle ratio D
ΔV
1
10
I
40
F
FP
I
− 2
F
/ ΔTa – I
– Ta
– D
Pulse width ≤ 100μs
Ta = 25°C
3
60
3
R
F
5
F
10
80
(mA)
R
− 1
10
100
3
30
10
120
50
0
6
0.001
1000
0.01
200
160
120
100
500
300
100
0.1
80
40
10
50
30
10
0
1
5
3
1
−20
0.6
0
1.0
0
Pulse forward voltage V
0.4
85°C
Ambient temperature Ta (°C)
Forward voltage V
20
1.4
25
°C
0.8
I
40
FP
P
I
F
Pulse width ≤ 10μs
Repetitive
Frequency = 100Hz
Ta = 25°C
C
– V
– V
1.8
– Ta
−25°C
60
F
FP
1.2
2.2
F
80
(V)
FP
2009-11-12
1.6
2.6
100
TLP181
(V)
120
3.0
2

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