TEA1110AT NXP Semiconductors, TEA1110AT Datasheet - Page 13
TEA1110AT
Manufacturer Part Number
TEA1110AT
Description
Manufacturer
NXP Semiconductors
Datasheet
1.TEA1110AT.pdf
(24 pages)
Specifications of TEA1110AT
Operating Supply Voltage (typ)
2.9V
Max Transmitter Gain
44.7dB
Receiver Gain (max)
34dB
Operating Temp Range
-25C to 75C
Package Type
SO
Pin Count
14
Operating Current
1.1mA
Operating Temperature Classification
Commercial
Mounting
Surface Mount
Lead Free Status / Rohs Status
Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
TEA1110AT
Manufacturer:
PHILIPS/飞利浦
Quantity:
20 000
Company:
Part Number:
TEA1110AT/C2
Manufacturer:
NXP
Quantity:
445
Part Number:
TEA1110ATC1
Manufacturer:
PHILIPS/飞利浦
Quantity:
20 000
Philips Semiconductors
CHARACTERISTICS
I
T
2000 Feb 15
line
Supplies (pins V
V
V
V
I
V
R
Microphone amplifier (pins MIC+ and MIC )
G
CMRR
V
V
Receiving amplifier (pins IR, QR and GAR)
G
amb
CC
Z
Z
V
G
G
G
G
ref
LN
LN(exR)
CC
LN(max)(rms)
notx
CCint
Low voltage versatile telephone
transmission circuit with dialler interface
vtx
vrx
SYMBOL
i
i
LN(T)
= 15 mA; V
vtx(f)
vtx(T)
vrx(f)
vrx(T)
= 25 C for TEA1110A(T); T
EE
stabilized voltage between LN and
SLPE
DC line voltage
DC line voltage with an external
resistor R
DC line voltage variation with
temperature referred to 25 C
internal current consumption
supply voltage for peripherals
equivalent supply voltage
resistance
input impedance
voltage gain from MIC+/MIC to
LN
gain variation with frequency
referred to 1 kHz
gain variation with temperature
referred to 25 C
common mode rejection ratio
maximum sending signal
(RMS value)
noise output voltage at pin LN; pins
MIC+/MIC shorted through 200
input impedance
voltage gain from IR to QR
gain variation with frequency
referred to 1 kHz
gain variation with temperature
referred to 25 C
= 0 V; R
LN
differential between pins
MIC+ and MIC
single-ended between pins
MIC+/MIC and V
, V
CC
, SLPE and REG)
VA
SLPE
PARAMETER
= 20 ; AGC pin connected to V
j
= 25 C for TEA1110AUH; unless otherwise specified.
EE
I
I
I
I
R
T
V
I
I
V
f = 300 to 3400 Hz
T
I
I
psophometrically
weighted (P53 curve)
V
f = 300 to 3400 Hz
T
line
line
line
line
P
P
line
line
amb
amb
amb
CC
MIC
IR
VA(SLPE REG)
= 0 mA
= 0.5 mA
= 1 mA
= 4 mA
= 15 mA
= 140 mA
= 15 mA; THD = 2%
= 4 mA, THD = 10%
= 4 mV (RMS)
= 2.9 V
13
= 25 to +75 C
= 4 mV (RMS)
= 25 to +75 C
= 25 to +75 C
CONDITIONS
EE
; Z
= 27 k
line
= 600 ; f = 1 kHz;
3.1
3.35
42.7
1.4
32
MIN.
3.35
1.6
2.3
3.65
4.4
1.1
2.9
550
64
32
43.7
80
1.7
0.8
20
33
TYP.
30
0.2
0.3
78.5
0.2
0.3
Product specification
TEA1110A
3.6
3.95
6.9
1.4
620
44.7
34
MAX.
V
V
V
V
V
V
mV
mA
V
k
k
dB
dB
dB
dB
V
V
dBmp
k
dB
dB
dB
UNIT