TD62504P Toshiba, TD62504P Datasheet
TD62504P
Specifications of TD62504P
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TD62504P Summary of contents
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... TD62502P / F : RIN = 10.5 kΩ Zener Diode···14~25 V P−MOS TD62503P / F, TD62506P / 2.7 kΩ···TTL C−MOS IN TD62504P / 10.5 kΩ···6~15 V P−MOS, C−MOS IN Package Type−P : DIP−16 pin Package Type−F : SOP−16 pin TD62501~507P/F Weight DIP16-P-300-2 ...
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... PIN CONNECTION (Top view) TD62501P / F, TD62502P / F TD62503P / F, TD62504P / F TD62507P / F SCHEMATICS (Each driver) TD62501P / F TD62502P / F TD62503P / F TD62504P / F TD62503P / 2.7 kΩ, TD62504P / 10.5 kΩ *: Parasitic Diodes TD62501~507P/F TD62505P / F, TD62506P / F 2 2006-06-14 ...
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... Collector Current Input Voltage Input Current Isolation Voltage P Power Dissipation F Operating Temperature Storage Temperature Note 1: TD62506P / F Note 2: TD62502P / F, TD62503P / F, TD62504P / F Note 3: TD62501P / F, TD62505P / F, TD62507P / F Note 4: On Glass Epoxy PCB (30 × 30 × 1.6 mm, Cu 50%) (Ta = 25°C Unless otherwise noted) SYMBOL RATING UNIT ...
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... Collector−Emitter Saturation Voltage (Note 2) DCCurrent Transfer Ratio (Note 3) TD62502P / F Input Voltage TD62503P / F TD62504P / F Turn−On Delay Turn−Off Delay Note 1: Except TD62502P / F Only Note 2: Only TD62501P / F, TD62505P / F, TD62506P / F, TD62507P / F Note 3: Only TD62502P / F, TD62503P / F, TD62504P / F (Ta = −40~85°C) SYMBOL CONDITION V CEO V CBO ...
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... Note 2: See below INPUT CONDITION TYPE NUMBER R I TD62501P / F 2.7 kΩ TD62502P / F 0 Ω TD62503P / F 0 Ω TD62504P / F 0 Ω TD62505P / F 2.7 kΩ TD62506P / F 0 Ω TD62507P / F 2.7 kΩ Note 3: C includes probe and jig capacitance L PRECAUTIONS for USING This IC does not integrate protection circuits such as overcurrent and overvoltage protectors. ...
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TD62501~507P/F 6 2006-06-14 ...
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TD62501~507P/F 7 2006-06-14 ...
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PACKAGE DIMENSIONS DIP16−P−300−2.54A Weight: 1.11 g (typ.) TD62501~507P/F 8 Unit: mm 2006-06-14 ...
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PACKAGE DIMENSIONS SOP16−P−225−1.27 Weight: 0.16 g (typ.) TD62501~507P/F 9 Unit: mm 2006-06-14 ...
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Notes on Contents 1. Equivalent Circuits The equivalent circuit diagrams may be simplified or some parts of them may be omitted for explanatory purposes. 2. Test Circuits Components in the test circuits are used only to obtain and confirm the ...
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Points to Remember on Handling of ICs (1) Heat Radiation Design In using an IC with large current flow such as power amp, regulator or driver, please design the device so that heat is appropriately radiated, not to exceed the ...
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... TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property ...