MCH6436-TL-E ON Semiconductor, MCH6436-TL-E Datasheet - Page 2

• Manufacturer Part Number: MCH6436-TL-E
• Description: MOSFET Power SWITCHING DEVICE
• Manufacturer: ON Semiconductor

Specifications of MCH6436-TL-E

• Lead Free Status / Rohs Status: Details

Continued from preceding page.
Package Dimensions
unit : mm (typ)
7022A-009
Static Drain-to-Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0
0
0.1
6
1
6
1
0.65
Parameter
2.0
5
2
5
0.2
2
Drain-to-Source Voltage, V DS -- V
4
3
3
4
0.3
0.3
I D -- V DS
0.4
0.15
1 : Drain
2 : Drain
3 : Gate
4 : Source
5 : Drain
6 : Drain
SANYO : MCPH6
0.5
0 to 0.02
0.6
R DS (on)1
R DS (on)2
R DS (on)3
Ciss
Coss
Crss
t d (on)
t r
t d (off)
t f
Qg
Qgs
Qgd
V SD
Symbol
0.7
V GS =1.2V
0.8
I D =3A, V GS =4.5V
I D =1.5A, V GS =2.5V
I D =1A, V GS =1.8V
V DS =10V, f=1MHz
V DS =10V, f=1MHz
V DS =10V, f=1MHz
See specifi ed Test Circuit.
See specifi ed Test Circuit.
See specifi ed Test Circuit.
See specifi ed Test Circuit.
V DS =10V, V GS =4.5V, I D =6A
V DS =10V, V GS =4.5V, I D =6A
V DS =10V, V GS =4.5V, I D =6A
I S =6A, V GS =0V
0.9
IT15078
1.0
MCH6436
Conditions
Switching Time Test Circuit
4.5V
P.G
0V
PW=10μs
D.C.≤1%
7
6
5
4
3
2
1
0
0
V DS =10V
V IN
0.2
V IN
Gate-to-Source Voltage, V GS -- V
0.4
50Ω
G
0.6
min
I D -- V GS
V DD =15V
D
0.8
S
I D =3A
R L =5Ω
Ratings
1.0
typ
0.82
710
MCH6436
7.5
1.3
1.5
26
35
46
95
65
11
33
70
52
V OUT
1.2
max
1.4
1.2
34
49
69
No. A1565-2/4
1.6
IT15063
Unit
mΩ
mΩ
mΩ
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
V
1.8