IRFR13N20D International Rectifier, IRFR13N20D Datasheet - Page 4

• Manufacturer Part Number: IRFR13N20D
• Manufacturer: International Rectifier
• Type: Power MOSFETr

Specifications of IRFR13N20D

• Number Of Elements: 1
• Polarity: N
• Channel Mode: Enhancement
• Drain-source On-res: 0.235Ohm
• Drain-source On-volt: 200V
• Gate-source Voltage (max): ±30V
• Continuous Drain Current: 13A
• Power Dissipation: 110W
• Operating Temp Range: -55C to 175C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 2 +Tab
• Package Type: DPAK
• Lead Free Status / Rohs Status: Not Compliant

IRFR13N20D/IRFU13N20D
10000
4
1000
100
10
100
0.1
10
1
Fig 5. Typical Capacitance Vs.
Fig 7. Typical Source-Drain Diode
0.2
1
Drain-to-Source Voltage
V DS , Drain-to-Source Voltage (V)
V
0.4
T = 175 C
SD
J
Forward Voltage
,Source-to-Drain Voltage (V)
V GS = 0V,
C iss = C gs + C gd , C ds
C rss = C gd
C oss = C ds + C gd
10
0.6
°
Ciss
Coss
Crss
0.8
f = 1 MHZ
T = 25 C
J
100
1.0
V
°
GS
SHORTED
1.2
= 0 V
1000
1.4
1000
100
0.1
20
16
12
Fig 8. Maximum Safe Operating Area
10
8
4
0
1
0
1
Fig 6. Typical Gate Charge Vs.
I =
T
T
Single Pulse
D
C
J
= 25 C
= 175 C
7.8A
Gate-to-Source Voltage
OPERATION IN THIS AREA LIMITED
V
DS
°
Q , Total Gate Charge (nC)
°
G
10
, Drain-to-Source Voltage (V)
10
V
V
V
BY R
DS
DS
DS
= 160V
= 100V
= 40V
20
DS(on)
FOR TEST CIRCUIT
SEE FIGURE
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100
30
10us
100us
1ms
10ms
13
1000
40