BTA16-800SW3G ON Semiconductor, BTA16-800SW3G Datasheet

58T1371

BTA16-800SW3G

Manufacturer Part Number
BTA16-800SW3G
Description
58T1371
Manufacturer
ON Semiconductor
Datasheet

Specifications of BTA16-800SW3G

Rohs Compliant
YES
Peak Repetitive Off-state Voltage, Vdrm
800V
Gate Trigger Current Max (qi), Igt
10mA
On State Rms Current It(rms)
16A
Peak Non Rep Surge Current Itsm 50hz
170A
Holding Current Max Ih
20mA
BTA16-600SW3G,
BTA16-800SW3G
Triacs
Silicon Bidirectional Thyristors
where high noise immunity and high commutating di/dt are required.
Features
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. V
MAXIMUM RATINGS
© Semiconductor Components Industries, LLC, 2009
September, 2009 − Rev. 1
Peak Repetitive Off−State Voltage (Note 1)
(T
50 to 60 Hz, Gate Open)
On-State RMS Current
(Full Cycle Sine Wave, 60 Hz, T
Peak Non-Repetitive Surge Current
(One Full Cycle Sine Wave, 60 Hz,
T
Circuit Fusing Consideration (t = 8.3 ms)
Non−Repetitive Surge Peak Off−State
Voltage (T
Peak Gate Current (T
Peak Gate Power
(Pulse Width ≤ 20 ms, T
Average Gate Power (T
Operating Junction Temperature Range
Storage Temperature Range
RMS Isolation Voltage
(t = 300 ms, R.H. ≤ 30%, T
Designed for high performance full-wave ac control applications
C
Blocking Voltage to 800 V
On-State Current Rating of 16 A RMS at 25°C
Uniform Gate Trigger Currents in Three Quadrants
High Immunity to dV/dt − 250 V/ms minimum at 110°C
Minimizes Snubber Networks for Protection
Industry Standard TO-220AB Package
High Commutating dI/dt − 2 A/ms minimum at 110°C
Internally Isolated (2500 V
These are Pb−Free Devices*
voltages shall not be tested with a constant current source such that the
voltage ratings of the devices are exceeded.
J
= 25°C)
DRM
= −40 to 110°C, Sine Wave,
and V
J
= 25°C, t = 8.3 ms)
RRM
Rating
for all types can be applied on a continuous basis. Blocking
J
= 110°C, t ≤ 20 ms)
C
J
BTA16−600SW3G
BTA16−800SW3G
(T
= 110°C)
= 80°C)
J
A
= 25°C unless otherwise noted)
= 25°C)
C
RMS
= 25°C)
)
Symbol
I
P
V
V
V
T(RMS)
V
I
P
I
T
V
TSM
G(AV)
DRM,
DSM/
RRM
RSM
I
GM
T
GM
stg
2
iso
J
t
V
−40 to +110
−40 to +150
DSM/
Value
+100
2500
600
800
170
120
4.0
1.0
16
20
V
RSM
1
A
Unit
2
°C
°C
W
W
V
A
A
V
A
V
sec
*For additional information on our Pb−Free strategy and
BTA16−600SW3G
BTA16−800SW3G
soldering details, please download the ON Semicon-
ductor Soldering and Mounting Techniques Reference
Manual, SOLDERRM/D.
1
2
x
A
Y
WW
G
3
1
2
3
4
Device
MT2
ORDERING INFORMATION
600 thru 800 VOLTS
16 AMPERES RMS
4
= 6 or 8
= Assembly Location
= Year
= Work Week
= Pb−Free Package
http://onsemi.com
PIN ASSIGNMENT
CASE 221A
TO−220AB
STYLE 12
TRIACS
TO−220AB
TO−220AB
(Pb−Free)
(Pb−Free)
Package
Main Terminal 1
Main Terminal 2
Publication Order Number:
No Connection
Gate
BTA16−600SW3/D
BTA16−xSWG
G
MARKING
DIAGRAM
50 Units / Rail
50 Units / Rail
MT1
AYWW
Shipping

Related parts for BTA16-800SW3G

BTA16-800SW3G Summary of contents

Page 1

... BTA16-600SW3G, BTA16-800SW3G Triacs Silicon Bidirectional Thyristors Designed for high performance full-wave ac control applications where high noise immunity and high commutating di/dt are required. Features • Blocking Voltage to 800 V • On-State Current Rating RMS at 25°C • Uniform Gate Trigger Currents in Three Quadrants • ...

Page 2

THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction−to−Case (AC) Junction−to−Ambient Maximum Lead Temperature for Soldering Purposes 1/8″ from Case for 10 seconds ELECTRICAL CHARACTERISTICS Characteristic OFF CHARACTERISTICS Peak Repetitive Blocking Current (V = Rated Gate Open) D DRM ...

Page 3

... Voltage Current Characteristic of Triacs Symbol Parameter V Peak Repetitive Forward Off State Voltage DRM I Peak Forward Blocking Current DRM V Peak Repetitive Reverse Off State Voltage RRM I Peak Reverse Blocking Current RRM V Maximum On State Voltage TM I Holding Current H Quadrant II (−) I GATE I − GT Quadrant III (− ...

Page 4

I , RMS ON‐STATE CURRENT (AMP) T(RMS) Figure 1. Typical RMS Current Derating 1000 100 110°C J ...

Page 5

−40 −25 − JUNCTION TEMPERATURE (°C) J Figure 6. Typical Gate Trigger Current Variation ...

Page 6

... U 0.000 0.050 0.00 1.27 V 0.045 --- 1.15 --- Z --- 0.080 --- 2.04 STYLE 12: PIN 1. MAIN TERMINAL 1 2. MAIN TERMINAL 2 3. GATE 4. NOT CONNECTED ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative BTA16−600SW3/D ...

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