AUIRF1405 International Rectifier, AUIRF1405 Datasheet

54T8940

AUIRF1405

Manufacturer Part Number
AUIRF1405
Description
54T8940
Manufacturer
International Rectifier
Datasheet

Specifications of AUIRF1405

Transistor Polarity
N Channel
Continuous Drain Current Id
75A
Drain Source Voltage Vds
55V
On Resistance Rds(on)
0.0046ohm
Rds(on) Test Voltage Vgs
10V
Power Dissipation Pd
330W
Rohs Compliant
Yes
Configuration
Single
Resistance Drain-source Rds (on)
5.3 mOhms
Drain-source Breakdown Voltage
55 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
169 A
Power Dissipation
330 W
Mounting Style
Through Hole
Package / Case
TO-220AB
Gate Charge Qg
170 nC
Minimum Operating Temperature
- 55 C
Lead Free Status / Rohs Status
 Details

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
AUIRF1405
Manufacturer:
IR
Quantity:
12 500
Part Number:
AUIRF1405ZL
Manufacturer:
IR
Quantity:
12 500
Part Number:
AUIRF1405ZS
Manufacturer:
IR
Quantity:
12 500
Company:
Part Number:
AUIRF1405ZSTRR
Quantity:
8 000
HEXFET
*Qualification standards can be found at http://www.irf.com/
Features
l
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Description
Specifically designed for Automotive applications,
this Stripe Planar design of HEXFET® Power
MOSFETs utilizes the latest processing techniques to
achieve low on-resistance per silicon area. This benefit
combined with the fast switching speed and
ruggedized device design that HEXFET power
MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use
in Automotive and a wide variety of other applications.
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These
are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in
the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device
reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions.
Ambient temperature (T
I
I
I
I
P
V
E
I
E
dv/dt
T
T
Thermal Resistance
R
R
R
www.irf.com
D
D
D
DM
AR
J
STG
D
GS
AS
AR
θJC
θCS
θJA
@ T
@ T
@ T
@T
C
C
C
C
= 25°C
= 100°C Continuous Drain Current, VGS @ 10V (Silicon Limited)
= 25°C
®
= 25°C
is a registered trademark of International Rectifier.
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy (Thermally Limited)
Avalanche Current
Repetitive Avalanche Energy
Peak Diode recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting Torque, 6-32 or M3 screw
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
A
) is 25°C, unless otherwise specified.
j
Ã
Parameter
Parameter
e
AUTOMOTIVE GRADE
GS
GS
i
@ 10V (Silicon Limited)
@ 10V (Package Limited)
G
D
S
d
Gate
G
V
R
I
I
D (Silicon Limited)
D (Package Limited)
(BR)DSS
DS(on)
HEXFET
See Fig.12a, 12b, 15, 16
300 (1.6mm from case )
Typ.
0.50
–––
–––
10 lbf
D
AUIRF1405
AUIRF1405
-55 to + 175
TO-220AB
typ.
max
y
Drain
Max.
169
118
in (1.1N
680
330
± 20
560
2.2
5.0
D
75
®
h
h
Power MOSFET
G
y
D
m)
Max.
S
0.45
–––
62
169A
4.6mΩ
5.3mΩ
55V
75A
Source
S
Units
Units
W/°C
°C/W
V/ns
mJ
mJ
°C
W
A
V
A
1

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AUIRF1405 Summary of contents

Page 1

... AUTOMOTIVE GRADE AUIRF1405 HEXFET V D (BR)DSS R DS(on (Silicon Limited (Package Limited) D TO-220AB AUIRF1405 G Gate @ 10V (Silicon Limited 10V (Package Limited See Fig.12a, 12b 175 300 (1.6mm from case ) 10 lbf Typ. ––– 0.50 ––– ...

Page 2

Static Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS ΔV /ΔT Breakdown Voltage Temp. Coefficient (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) gfs Forward Transconductance I Drain-to-Source Leakage Current DSS I Gate-to-Source Forward ...

Page 3

VGS TOP 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V 100 10 4.5V 20μs PULSE WIDTH 0 Drain-to-Source Voltage (V) DS Fig 1. Typical Output Characteristics 1000 ° ...

Page 4

0V MHZ C iss = rss = oss = 10000 Ciss Coss 1000 Crss 100 1 ...

Page 5

LIMITED BY PACKAGE 160 120 100 125 T , Case Temperature ( C) C Fig 9. Maximum Drain Current Vs. Case Temperature 0.50 0.20 0.1 0.10 0.05 0.02 SINGLE PULSE ...

Page 6

D.U 20V 0.01 Ω Fig 12a. Unclamped Inductive Test Circuit V (BR)DSS Fig 12b. Unclamped Inductive Waveforms Charge ...

Page 7

Duty Cycle = Single Pulse 0.01 100 0.05 0. 1.0E-08 1.0E-07 1.0E-06 Fig 15. Typical Avalanche Current Vs.Pulsewidth 600 TOP Single Pulse BOTTOM 10% Duty Cycle 500 101A 400 300 200 100 0 25 ...

Page 8

Driver Gate Drive P.W. D.U.T. I Waveform SD Reverse Recovery Current D.U.T. V Waveform DS Re-Applied Voltage Inductor Curent For N-channel 8 + • • ƒ • - „ • • • P.W. Period ...

Page 9

www.irf.com 9 ...

Page 10

... Ordering Information Base part Package Type number AUIRF1405 TO-220 10 Standard Pack Complete Part Number Form Quantity Tube 50 AUIRF1405 www.irf.com ...

Page 11

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