DG419DJ+ Maxim Integrated Products, DG419DJ+ Datasheet - Page 10

IC SWITCH SPDT 8DIP

DG419DJ+

Manufacturer Part Number
DG419DJ+
Description
IC SWITCH SPDT 8DIP
Manufacturer
Maxim Integrated Products
Type
Analog Switchr
Datasheet

Specifications of DG419DJ+

Function
Switch
Circuit
1 x SPDT
On-state Resistance
35 Ohm
Voltage Supply Source
Single, Dual Supply
Voltage - Supply, Single/dual (±)
10 V ~ 30 V, ±4.5 V ~ 20 V
Operating Temperature
-40°C ~ 85°C
Mounting Type
Through Hole
Package / Case
8-DIP (0.300", 7.62mm)
Number Of Switches
Dual
Switch Configuration
SPDT
On Resistance (max)
35 Ohms
On Time (max)
175 ns
Off Time (max)
145 ns
Off Isolation (typ)
68 dB
Supply Voltage (max)
+/- 20 V
Supply Voltage (min)
+/- 4.5 V
Supply Current
- 0.0001 uA
Maximum Power Dissipation
727 mW
Maximum Operating Temperature
+ 85 C
Mounting Style
Through Hole
Description/function
Analog Switch
Input Level
CMOS, TTL
Minimum Operating Temperature
- 40 C
Off State Leakage Current (max)
5 nA
Package
8PDIP N
Maximum On Resistance
100@10.8V Ohm
Maximum Propagation Delay Bus To Bus
175@±15V ns
Maximum High Level Output Current
30 mA
Switch Architecture
SPDT
Power Supply Type
Single|Dual
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Improved, SPST/SPDT Analog Switches
* Contact factory for dice specifications.
**Contact factory for availability and processing to MIL-STD-883B.
10
__Ordering Information (continued)
DG417DK
DG417AK
DG418CJ
DG418CY
DG418C/D
DG418DJ
DG418DY
DG418DK
DG418AK
DG419CJ
DG419CY
DG419C/D
DG419DJ
DG419DY
DG419DK
DG419AK
______________________________________________________________________________________
PART
-40°C to +85°C
-55°C to +125°C
-40°C to +85°C
-40°C to +85°C
-40°C to +85°C
-55°C to +125°C
-40°C to +85°C
-40°C to +85°C
-40°C to +85°C
-55°C to +125°C
TEMP. RANGE
0°C to +70°C
0°C to +70°C
0°C to +70°C
0°C to +70°C
0°C to +70°C
0°C to +70°C
8 CERDIP
8 CERDIP**
8 Plastic DIP
8 SO
Dice*
8 Plastic DIP
8 SO
8 CERDIP
8 CERDIP**
8 Plastic DIP
8 SO
Dice*
8 Plastic DIP
8 SO
8 CERDIP
8 CERDIP**
PIN-PACKAGE
TRANSISTOR COUNT: 32
SUBSTRATE CONNECTED TO V+
______________________Chip Topography
DIE PAD
5
4
1
2
3
4
5
6
7
8
9
3
DG417
2
6
GND
N.C.
N.C.
V+
VL
IN
V-
D
S
1.47mm
0.058"
1
7
DG418
GND
N.C.
N.C.
V+
VL
IN
V-
D
S
9
8
DG419
1.93mm
0.076"
GND
V+
VL
IN
V-
D
D
S
S

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