BF1118WR,115 NXP Semiconductors, BF1118WR,115 Datasheet
BF1118WR,115
Specifications of BF1118WR,115
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BF1118WR,115 Summary of contents
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... BF1118; BF1118R; BF1118W; BF1118WR Silicon RF switches Rev. 1 — 29 June 2010 1. Product profile 1.1 General description These switches are a combination of a depletion type Field-Effect Transistor (FET) and a band-switching diode. The BF1118, BF1118R, BF1118W and BF1118WR are encapsulated in the SOT143B, SOT143R, SOT343N and SOT343R respectively. The low loss and high isolation capabilities of these devices provide excellent RF switching functions ...
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... NXP Semiconductors 2. Pinning information Table 2. Pin Description BF1118 (SOT143B) 1 FET gate; diode anode 2 diode cathode 3 source 4 drain BF1118R (SOT143R) 1 FET gate; diode anode 2 diode cathode 3 source 4 drain BF1118W (SOT343N) 1 FET gate; diode anode 2 diode cathode 3 source 4 drain BF1118WR (SOT343R) 1 FET gate; diode anode ...
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... NXP Semiconductors 4. Marking Table 4. Type number BF1118 BF1118R BF1118W BF1118WR 5. Limiting values Table 5. In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol FET Diode FET and diode T stg Thermal characteristics Table 6. Symbol R th(j-sp) [1] Soldering point of FET gate and diode anode lead. ...
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... NXP Semiconductors 7. Static characteristics Table 7. Static characteristics ° unless otherwise specified. j Symbol Parameter FET V gate-source breakdown voltage (BR)GSS V gate-source pinch-off voltage GS(p) I drain cut-off current DSX I gate leakage current GSS R drain-source on-state resistance DSon Diode V forward voltage F I reverse current R 8. Dynamic characteristics Table 8 ...
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... NXP Semiconductors 0 L ins(on) (dB) −1 −2 −3 −4 0 200 400 forward current). Measured in test circuit see Fig 1. On-state insertion loss as a function of frequency; typical values On-state Off-state 3.3 V. Fig 3. Test circuit BF1118_1118R_1118W_1118WR Product data sheet 001aal987 600 800 1000 f (MHz Ω; I ...
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... NXP Semiconductors 9. Package outline Plastic surface-mounted package; 4 leads DIMENSIONS (mm are the original dimensions UNIT max 1.1 0.48 0.88 0.1 mm 0.9 0.38 0.78 OUTLINE VERSION IEC SOT143B Fig 4. Package outline SOT143B BF1118_1118R_1118W_1118WR Product data sheet BF1118(R); BF1118W( scale 0.15 3.0 1.4 1.9 1 ...
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... NXP Semiconductors Plastic surface-mounted package; reverse pinning; 4 leads DIMENSIONS (mm are the original dimensions UNIT max 1.1 0.48 0.88 0.1 mm 0.9 0.38 0.78 OUTLINE VERSION IEC SOT143R Fig 5. Package outline SOT143R BF1118_1118R_1118W_1118WR Product data sheet BF1118(R); BF1118W( scale 0.15 3.0 1.4 1.9 1 ...
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... NXP Semiconductors Plastic surface-mounted package; 4 leads DIMENSIONS (mm are the original dimensions UNIT max 0.4 1.1 0.7 mm 0.1 0.3 0.8 0.5 OUTLINE VERSION IEC SOT343N Fig 6. Package outline SOT343N BF1118_1118R_1118W_1118WR Product data sheet BF1118(R); BF1118W( scale 0.25 2.2 1.35 1.3 1.15 0.10 1 ...
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... NXP Semiconductors Plastic surface-mounted package; reverse pinning; 4 leads DIMENSIONS (mm are the original dimensions UNIT max 0.4 0.7 1.1 mm 0.1 0.8 0.3 0.5 OUTLINE VERSION IEC SOT343R Fig 7. Package outline SOT343R BF1118_1118R_1118W_1118WR Product data sheet scale 0.25 2.2 1.35 1.3 1.15 0.10 1 ...
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... NXP Semiconductors 10. Abbreviations Table 9. Acronym AQL MOSFET RF S4 VCR 11. Revision history Table 10. Revision history Document ID BF1118_1118R_1118W_1118WR v.1 BF1118_1118R_1118W_1118WR Product data sheet BF1118(R); BF1118W(R) Abbreviations Description Acceptable Quality Level Metal-Oxide Semiconductor Field-Effect Transistor Radio Frequency Special inspection level 4 VideoCassette Recorder Release date ...
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... In no event shall NXP Semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation - lost profits, lost savings, business interruption, costs related to the removal or ...
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... NXP Semiconductors’ specifications such use shall be solely at customer’s own risk, and (c) customer fully indemnifies NXP Semiconductors for any 13. Contact information For more information, please visit: ...
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... NXP Semiconductors 14. Contents 1 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.1 General description . . . . . . . . . . . . . . . . . . . . . 1 1.2 Features and benefits . . . . . . . . . . . . . . . . . . . . 1 1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.4 Quick reference data . . . . . . . . . . . . . . . . . . . . 1 2 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 3 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 4 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 5 Limiting values Thermal characteristics . . . . . . . . . . . . . . . . . . 3 7 Static characteristics Dynamic characteristics . . . . . . . . . . . . . . . . . . 4 9 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 6 10 Abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . 10 11 Revision history ...