FDS89161LZ Fairchild Semiconductor, FDS89161LZ Datasheet

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FDS89161LZ

Manufacturer Part Number
FDS89161LZ
Description
MOSFET Power 100V Dual N-Channel PowerTrench MOSFET
Manufacturer
Fairchild Semiconductor
Datasheet

Specifications of FDS89161LZ

Lead Free Status / Rohs Status
 Details

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FDS89161LZ Rev. C4
©2011 Fairchild Semiconductor Corporation
FDS89161LZ
Dual N-Channel PowerTrench
100 V, 2.7 A, 105 mΩ
Features
MOSFET Maximum Ratings
Thermal Characteristics
Package Marking and Ordering Information
V
V
I
E
P
T
R
R
D
J
DS
GS
AS
D
Max r
Max r
High performance trench technology for extremely low r
High power and current handling capability in a widely used
surface mount package
CDM ESD protection level > 2KV typical (Note 4)
100% UIL Tested
RoHS Compliant
θJC
θJA
, T
Symbol
Device Marking
STG
FDS89161LZ
DS(on)
DS(on)
= 105 mΩ at V
= 160 mΩ at V
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous
Single Pulse Avalanche Energy
Power Dissipation
Power Dissipation
Operating and Storage Junction Temperature Range
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
D1
Pin 1
D1
D2
GS
GS
SO-8
D2
FDS89161LZ
= 10 V, I
= 4.5 V, I
-Pulsed
Device
S1
D
D
= 2.7 A
= 2.1 A
G1
T
A
S2
= 25 °C unless otherwise noted
Parameter
G2
®
DS(on)
Package
MOSFET
SO-8
T
T
C
A
1
= 25 °C
= 25 °C
General Description
This
Fairchild Semiconductor‘s advanced Power Trench
that has been special tailored to minimize the on-state
resisitance and yet maintain superior switching performance.
G-S zener has been added to enhance ESD voltage level
Application
DC-DC conversion
D2
D2
D1
D1
N-Channel logic Level MOSFETs are produced using
5
6
7
8
Reel Size
13 ’’
(Note 1a)
Q2
Q1
(Note1a)
(Note 3)
(Note 1)
Tape Width
12 mm
-55 to +150
4
3
2
1
Ratings
100
±20
2.7
1.6
4.0
15
13
31
78
G2
S1
S2
G1
www.fairchildsemi.com
June 2011
2500 units
Quantity
®
process
Units
°C/W
.
mJ
°C
W
V
V
A

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FDS89161LZ Summary of contents

Page 1

... R Thermal Resistance, Junction to Ambient θJA Package Marking and Ordering Information Device Marking Device FDS89161LZ FDS89161LZ ©2011 Fairchild Semiconductor Corporation FDS89161LZ Rev. C4 ® MOSFET General Description = 2.7 A This N-Channel logic Level MOSFETs are produced using D Fairchild Semiconductor‘s advanced Power Trench = 2.1 A ...

Page 2

... Pulse Test: Pulse Width < 300μs, Duty cycle < 2.0%. 3. Starting ° 0.3 mH, IAS =25 A, VDD = 27 V, VGS = 10V. 4. The diode connected between gate and source serves only as protection against ESD. No gate overvoltage rating is implied. ©2011 Fairchild Semiconductor Corporation FDS89161LZ Rev 25°C unless otherwise noted J Test Conditions = 250 μ ...

Page 3

... Figure 3. Normalized On-Resistance vs Junction Temperature PULSE DURATION = 80 DUTY CYCLE = 0.5% MAX 150 - GATE TO SOURCE VOLTAGE (V) GS Figure 5. Transfer Characteristics ©2011 Fairchild Semiconductor Corporation FDS89161LZ Rev 25°C unless otherwise noted 3 μ 500 400 300 200 100 50 75 100 125 150 μ s 0.1 0.01 ...

Page 4

... T 1.0 0.01 0 TIME IN AVALANCHE (ms) AV Figure 9. Unclamped Inductive Switching Capability - 125 GATE TO SOURCE VOLTAGE ( Figure 11. Gate Leakage Current vs Gate to Source Voltage ©2011 Fairchild Semiconductor Corporation FDS89161LZ Rev 25°C unless otherwise noted J 400 100 100 125 0.01 0.005 MHz ...

Page 5

... Figure 13. Single Pulse Maximum Power Dissipation 2 DUTY CYCLE-DESCENDING ORDER 0.5 0.2 0.1 0.1 0.05 0.02 0.01 0.01 0.001 - Figure 14. ©2011 Fairchild Semiconductor Corporation FDS89161LZ Rev 25°C unless otherwise noted PULSE WIDTH (sec) SINGLE PULSE 135 C/W θ RECTANGULAR PULSE DURATION (sec) ...

Page 6

... Datasheet Identification Product Status Advance Information Formative / In Design Preliminary First Production No Identification Needed Full Production Obsolete Not In Production ©2011 Fairchild Semiconductor Corporation FDS89161LZ Rev. C4 Power-SPM™ ® PowerTrench PowerXS™ SM Programmable Active Droop™ ® QFET QS™ Quiet Series™ RapidConfigure™ ...

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