BD9766FV-E2 Rohm Semiconductor, BD9766FV-E2 Datasheet - Page 4

• Manufacturer Part Number: BD9766FV-E2
• Description: IC INVERTER CONTROL 2CH SSOP28
• Manufacturer: Rohm Semiconductor
• Series: -r

Specifications of BD9766FV-E2

• Applications: LCD Display
• Current - Supply: 9mA
• Voltage - Supply: 5 V ~ 11 V
• Operating Temperature: -35°C ~ 85°C
• Mounting Type: *
• Package / Case: *
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

〇
１０． By STB voltage, BD9886FV is changed to 2 states. Therefore, do not input STB pin voltage between one state and the other
１１．The pin connected a connector need to connect to the resistor for electrical surge destruction.
１２．This IC is a monolithic IC which (as shown is Fig-1)has P
１． When designing the external circuit, including adequate margins for variation between external devices and the IC.Use
２． Recommended Operating Range
３． Mounting Failures
４． Electromagnetic Fields
５. The GND pin should be the location within ±0.3V compared with the PGND pin
６． BD9766FV has the short circuit protection with Thermal Shut Down System. When STB or Vcc pin re-supplied, They enables
７． Absolute maximum ratings are those values that, if exceeded, may cause the life of a device to become significantly shortened.
８． About the external FET, the parasitic Capacitor may cause the gate voltage to change, when the drain voltage is switching.
９． On operating Slow Start Control (SS is less than 2.2V), It does not operate Timer Latch.
NOTE FOR USE
Parasitic diodes can occur inevitably in the structure of the IC. The operation of parasitic diodes can result in mutual
interference among circuits as well as operation faults and physical damage. Accordingly you must not use methods by which
parasitic diodes operate, such as applying a voltage that is lower than the GND(P substrate)voltage to an input pin.
formed from this P layer of each pin. For example, the relation between each potential is as follows,
The circuit functionality is guaranteed within of ambient temperature operation range as long as it is within recommended
operating range. The standard electrical characteristic values cannot be guaranteed at other voltages in the operating
ranges, however, the variation will be small.
Mounting failures, such as misdirection or miscounts, may harm the device.
A strong electromagnetic field may cause the IC to malfunction.
to cancel the latch. If It rise the temperature of the chip more than 170℃(TYP), It make the external FET OFF
Moreover, the exact failure mode caused by short or open is not defined. Physical countermeasures, such as a fuse, need
to be considered when using a device beyond its maximum ratings.
Make sure to leave adequate margin for this IC variation.
adequate margins for steady state and transient characteristics.
state (0.8～2.0V).
○(When GND > PinB and GND > PinA, the P-N junction operates as a parasitic diode.)
○(When PinB > GND > PinA, the P-N junction operates as a parasitic transistor.)
(PinA)
Ｎ
P
＋
Parasitic diode
図-1 Simplified structure of a Bipolar IC
(PinA)
Resistance
GND
P substrate
N
Parasitic diode
GND
P
P
Other adjacent components
＋
REV. B
(PinB)
Parasitic diode
Ｎ
+
substrate and between the various pins. A P-N junction is
(PinB)
C
Ｃ
Transistor (NPN)
B
P substrate
B
N
N
N
Ｂ
C
E
GND
GND
Ｅ
Ｃ
Parasitic diode
E
N
GND
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