DS90CR483AVJD/NOPB National Semiconductor, DS90CR483AVJD/NOPB Datasheet - Page 3

• Manufacturer Part Number: DS90CR483AVJD/NOPB
• Description: IC XMITTER 48BIT LVDS 100-TQFP
• Manufacturer: National Semiconductor

Specifications of DS90CR483AVJD/NOPB

• Function: Serializer/Deserializer
• Data Rate: 5.38Gbps
• Input Type: CMOS/TTL
• Output Type: LVDS
• Number Of Inputs: 48
• Number Of Outputs: 8
• Voltage - Supply: 3 V ~ 3.6 V
• Operating Temperature: -10°C ~ 70°C
• Mounting Type: Surface Mount
• Package / Case: 100-TQFP, 100-VQFP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: DS90CR483AVJD

CMOS/TTL DC SPECIFICATIONS
V
V
V
V
V
I
I
IN
OS
IH
IL
OH
OL
CL
Absolute Maximum Ratings
If Military/Aerospace specified devices are required,
please contact the National Semiconductor Sales Office/
Distributors for availability and specifications.
Electrical Characteristics
Over recommended operating supply and temperature ranges unless otherwise specified.
Symbol
Supply Voltage (V
CMOS/TTL Input Voltage
LVCMOS/TTL Output
Voltage
LVDS Receiver Input
Voltage
LVDS Driver Output
Voltage
LVDS Output Short
Circuit Duration
Junction Temperature
Storage Temperature
Lead Temperature
(Soldering, 4 sec.)
Maximum Package Power Dissipation Capacity @ 25°
C
100L TQFP
100 TQFP Package:
DS90CR483AVJD
High Level Input Voltage
Low Level Input Voltage
High Level Output
Voltage
Low Level Output Voltage I
Input Clamp Voltage
Input Current
Output Short Circuit
Current
Parameter
CC
)
−0.3V to (V
I
I
I
V
V
V
OH
OH
OL
CL
−65°C to +150°C
IN
IN
OUT
−0.3V to +5.5V
−0.3V to +3.6V
−0.3V to +3.6V
= −18 mA
= 2 mA
= −0.4 mA
= −2mA
= 0.4V, 2.5V or V
= GND
−0.3V to +4V
= 0V
Continuous
CC
(Note 1)
+150°C
+260°C
+ 0.3V)
2.3W
Conditions
CC
3
Recommended Operating
Conditions
Supply Voltage (V
Operating Free Air
Temperature (T
Receiver Input Range
Supply Noise Voltage
Input Clock (TX)
Package Derating:
ESD Rating:
DS90CR484AVJD
DS90CR483AVJD
DS90CR484AVJD
DS90CR483A
(HBM, 1.5kΩ, 100pF)
(EIAJ, 0Ω, 200pF)
DS90CR484A
(HBM, 1.5kΩ, 100pF)
(EIAJ, 0Ω, 200pF)
A)
CC
)
GND
Min
−15
2.0
2.7
2.7
18.1mW/°C above +25°C
18.1mW/°C above +25°C
Min Nom Max
−10
3.0
33
0
−0.79
2.85
+1.8
Typ
3.3
0.1
0
+25
3.3
−120
Max
−1.5
+70
100
112
+15
3.6
2.4
0.8
0.3
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> 300 V
> 200 V
> 6 kV
> 2 kV
2.3W
Units
mV
MHz
°C
V
V
Units
p-p
mA
µA
µA
V
V
V
V
V
V