VN770P STMicroelectronics, VN770P Datasheet

VN770P

Manufacturer Part Number

VN770P

Description

Manufacturer

STMicroelectronics

Datasheet

1.VN770P.pdf (11 pages)

Specifications of VN770P

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* Total resistance of one side in bridge configuration

DESCRIPTION

The VN770P is a device formed by three

monolithic chips housed in a standard SO28

package: a double high side and two low side

switches. Both the double high side and low side

switches are made using STMicroelectronics

VIPower technology. This device is suitable to

drive a DC motor in a bridge configuration as well

as to be used as a quad switch for any low

voltage application. The dual high side switches

have built-in thermal shut-down to protect the

chip from over temperature and short circuit,

status output to provide indication for open load

in off and on state, overtemperature conditions

and stuck-on to V

two OMNIFET types (fully autoprotected Power

MOSFET in VIPower

built-in thermal shut-down, linear current limitation

and overvoltage clamping. Fault feedback for

thermal

monitoring the voltage at the input pin.

DUAL HIGH-SIDE SWITCH

From the falling edge of the input signal, the

status output, initially low

condition

on-state), will go back to a high state with a

different delay in case of overtemperature (tpovl)

and in case of open open load (

This feature allows to discriminate the nature of

the detected fault. To protect the device against

September 1998

VN770P

IDEAL AS A LOW VOLTAGE BRIDGE

LINEAR CURRENT LIMITATION

VERY LOW STAND-BY POWER

DISSIPATION

SHORT CIRCUIT PROTECTED

STATUS FLAG DIAGNOSTICS

OPEN DRAIN DIAGNOSTICS OUTPUT

INTEGRATED CLAMPING CIRCUITS

UNDER-VOLTAGE PROTECTION

ESD PROTECTION

T YPE

intervention

(overtemperature

0.270

DS( on)

FOR COMPLETE H BRIDGE CONFIGURATIONS

. The low side switches are

QUAD SMART POWER SOLID STATE RELAY

can

technology). They have

9 A

OUT

to signal a fault

tpol

) respectively.

detected

open

26 V

load

short circuit and over current condition, the

thermal protection turns the integrated Power

MOS off at a minimum junction temperature of

140

the switch is automatically turned on again. In

short circuit the protection reacts with virtually no

delay, the sensor (one for each channel) being

located inside each of the two Power MOS areas.

This positioning allows the device to operate with

one channel in automatic thermal cycling and the

other one on a normal load. An internal function

of the devices ensures the fast demagnetization

of inductive loads with a typical voltage (V

of -18V. This function allows to greatly reduces

the power dissipation according to the formula:

where f = switching frequency and

In this device if the GND pin is disconnected, with

off.

LOW-SIDE SWITCHES

During normal operation, the Input pin is

electrically connected to the gate of the internal

power MOSFET. The device then behaves like a

standard power MOSFET and can be used as a

switch from DC to 50 KHz. The only difference

from the user’s standpoint is that a small DC

current (I

supply the internal circuitry.

dem

demag

not exceeding 16V, both channel will switch

= 0.5 L

C. When this temperature returns to 125

= demagnetization voltage.

iss

) flows into the Input pin in order to

load

)

SO-28

[(V

VN770P

demag

)/V

demag

] f

1/11

)

Related parts for VN770P

VN770P Summary of contents

Page 1

... INTEGRATED CLAMPING CIRCUITS UNDER-VOLTAGE PROTECTION ESD PROTECTION DESCRIPTION The VN770P is a device formed by three monolithic chips housed in a standard SO28 package: a double high side and two low side switches. Both the double high side and low side switches are made using STMicroelectronics VIPower technology ...

Page 2

... VN770P BLOCK DIAGRAM 2/11 ...

Page 3

... INPUT 2 Input of Switch 2 (high-side switch) 12, 14, 15, 18 DRAIN 4 Drain of Switch 4 (low-side switch) 13 INPUT 4 Input of Switch 4 (low-side switch) 16 URCE 4 Source of Switch 4 (low-side switch) 20 URCE 2 Source of Switch 2 (high-side switch) 22 URCE 1 Source of Switch 1 (high-side switch) 26 URCE 3 Source of Switch 3 (low-side switch) VN770P FUNCT ION 3/11 ...

Page 4

... VN770P PROTECTION CIRCUITS DUAL HIGH SIDE SWITCH The simplest way to protect the device against a continuous reverse battery voltage (-26V insert a a small resistor between pin 2 (GND) and ground. The suggested resistance value is about 150 . In any case the maximum voltage drop on this resistor should not overcome 0.5V. ...

Page 5

... C Parameter o C Max Max Max Test Co nditio 0 DS OUT State 7 OUT VN770P Value Uni 2000 V Internally Limited W o -40 to 150 C o -55 to 150 C Value Unit Internally Clamped Internally Limited A -14 A 2000 V Internally Limited W o Internally Limited C o -55 to 150 C/W o ...

Page 6

... VN770P ELECTRICAL CHARACTERISTICS FOR DUAL HIGH SIDE SWITCH (continued) R Output internal i Im pedance SWITCHING Symbol Parameter t (^) Turn-on Delay Time Of d(on) Output Current t (^) Rise Time Of O utput r Current t (^) Turn-off Delay Time Of d(o ff) Output Current t (^) Fall Time O f Output f Current (di/dt) Turn-on Current Slope ...

Page 7

... C for battery voltage of 13V which produces a voltage drop of 0.5 V Test Co nditio Test Co nditio Test Co nditio ns VN770P Min. Typ . Max. Unit 5 180 500 2500 s Min. Typ . Max. Unit -0 200 A 250 500 A Min. Typ . Max. Unit 0 0.07 0.1 Min. Typ . Max. Unit 7/11 ...

Page 8

... VN770P ELECTRICAL CHARACTERISTICS FOR LOW SIDE SWITCHES (continued Forward fs Transconductance C Output Capacitance os s SWITCHING (**) Symbol Parameter t Turn-on Delay Time d Rise Time r t Turn-off Delay Time d Fall Time f t Turn-on Delay Time d Rise Time r t Turn-off Delay Time d Fall Time f (di/dt) Turn-on Current Slope ...

Page 9

... TYPICAL APPLICATION DIAGRAM VN770P 9/11 ...

Page 10

... VN770P SO-28 MECHANICAL DATA DIM. MIN. TYP 0.10 b 0.35 b1 0. 17.7 E 10.00 e 1.27 e3 16.51 F 7.40 L 0.40 S 10/11 mm MAX. MIN. 2.65 0.30 0.004 0.49 0.013 0.32 0.009 45 (typ.) 18.1 0.697 10.65 0.393 7.60 0.291 1.27 0.016 8 (max.) inch TYP. MAX. 0.104 ...

Page 11

... The ST logo is a registered trademark of STMicroelectronics 1998 STMicroelectronics – Printed in Italy – All Rights Reserved Australia - Brazil - Canada - China - France - Germany - Italy - Japan - Korea - Malaysia - Malta - Mexico - Morocco - The Netherlands - Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A. STMicroelectronics GROUP OF COMPANIES . VN770P 11/11 ...

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